|
|
Taiwan Academic Institutional Repository >
Browse by Author
|
"luc quang ho"
Showing items 1-10 of 22 (3 Page(s) Totally)
1 2 3 > >>
View [10|25|50] records per page
| 元智大學 |
Sep-21 |
E-Mode GaN MIS-HEMT Using Ferroelectric Charge Trap Gate Stack With Low Dynamic On-Resistance and High V-th Stability by Field Plate Engineering
|
李清庭; Wu, Jui-Sheng; Lee, Chih-Chieh; Wu, Chia-Hsun; Kao, Min-Lu; Weng, You-Chen; Yang, Chih-Yi; Luc, Quang Ho; Ueda, Daisuke; Chang, Edward Yi |
| 元智大學 |
Jan-19 |
The effect of a and Ga intermediate layer on the interfacial layer properties of epitaxial GaSb on GaSb grown by metalorganic chemical vapor deposition
|
李清庭; Ha, Minh Thien Huu; Huynh, Sa Hoang; Do, Huy Binh; Luc, Quang Ho; Chang, Edward Yi |
| 國立交通大學 |
2019-09-02T07:46:17Z |
Normally-Off Tri-Gate GaN MIS-HEMTs with 0.76 m Omega center dot cm(2) Specific On-Resistance for Power Device Applications
|
Wu, Chia-Hsun; Chen, Jian-You; Han, Ping-Cheng; Lee, Ming-Wen; Yang, Kun-Sheng; Wang, Huan-Chung; Chang, Po-Chun; Luc, Quang Ho; Lin, Yueh-Chin; Dee, Chang-Fu; Hamzah, Azrul Azlan; Chang, Edward Yi |
| 國立交通大學 |
2019-04-03T06:43:48Z |
Study of the interface stability of the metal (Mo, Ni, Pd)/HfO2/AlN/InGaAs MOS devices
|
Do, Huy Binh; Luc, Quang Ho; Ha, Minh Thien Huu; Huynh, Sa Hoang; Nguyen, Tuan Anh; Lin, Yueh Chin; Chang, Edward Yi |
| 國立交通大學 |
2019-04-02T05:58:23Z |
The effect of a and Ga intermediate layer on the interfacial layer properties of epitaxial GaSb on GaSb grown by metalorganic chemical vapor deposition
|
Ha, Minh Thien Huu; Huynh, Sa Hoang; Do, Huy Binh; Lee, Ching Ting; Luc, Quang Ho; Chang, Edward Yi |
| 國立交通大學 |
2018-08-21T05:54:15Z |
Growth of high-quality In0.28Ga0.72Sb/AlSb/GaSb/GaAs heterostructure by metalorganic chemical vapor deposition for single-channel Sb-based complementary metal-oxide-semiconductor applications
|
Huynh, Sa Hoang; Ha, Minh Thien Huu; Do, Huy Binh; Nguyen, Tuan Anh; Yu, Hung Wei; Luc, Quang Ho; Chang, Edward Yi |
| 國立交通大學 |
2018-08-21T05:53:49Z |
High-Performance Normally-OFF GaN MIS-HEMTs Using Hybrid Ferroelectric Charge Trap Gate Stack (FEG-HEMT) for Power Device Applications
|
Wu, Chia-Hsun; Han, Ping-Cheng; Liu, Shih-Chien; Hsieh, Ting-En; Lumbantoruan, Franky Juanda; Ho, Yu-Hsuan; Chen, Jian-You; Yang, Kun-Sheng; Wang, Huan-Chung; Lin, Yen-Ku; Chang, Po-Chun; Luc, Quang Ho; Lin, Yueh-Chin; Chang, Edward Yi |
| 國立交通大學 |
2018-08-21T05:53:24Z |
In0.53Ga0.47As FinFET and GAA-FET With Remote-Plasma Treatment
|
Luc, Quang Ho; Yang, Kun Sheng; Lin, Jia Wei; Chang, Chia Chi; Huy Binh Do; Huynh, Sa Hoang; Minh Thien Huu Ha; Tuan Anh Nguyen; Lin, Yueh Chin; Hu, Chenming; Chang, Edward Yi |
| 國立交通大學 |
2018-08-21T05:53:19Z |
Evaluation of AlGaN/GaN metal-oxide-semicondutor high-electron mobility transistors with plasma-enhanced atomic layer deposition HfO2/AlN date dielectric for RF power applications
|
Chiu, Yu Sheng; Luc, Quang Ho; Lin, Yueh Chin; Huang, Jui Chien; Dee, Chang Fu; Majlis, Burhanuddin Yeop; Chang, Edward Yi |
| 國立交通大學 |
2018-08-21T05:53:14Z |
AlGaN/GaN MIS-HEMTs With High Quality ALD-Al2O3 Gate Dielectric Using Water and Remote Oxygen Plasma As Oxidants
|
Wang, Huan-Chung; Hsieh, Ting-En; Lin, Yueh-Chin; Luc, Quang Ho; Liu, Shih-Chien; Wu, Chia-Hsun; Dee, Chang Fu; Majlis, Burhanuddin Yeop; Chang, Edward Yi |
Showing items 1-10 of 22 (3 Page(s) Totally)
1 2 3 > >>
View [10|25|50] records per page
|
