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Showing items 1-17 of 17 (1 Page(s) Totally)
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| 臺大學術典藏 |
2021-05-24T13:07:21Z |
Robust Brain-Inspired Computing: On the Reliability of Spiking Neural Network Using Emerging Non-Volatile Synapses
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Wei, Ming Liang; Amrouch, Hussam; Sung, Cheng Lin; Lue, Hang Ting; CHIA-LIN YANG; Wang, Keh Chung; Lu, Chih Yuan |
| 臺大學術典藏 |
2020-05-04T08:06:49Z |
On Trading Wear-leveling with Heal-leveling.
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Chang, Yu-Ming;Chang, Yuan-Hao;Chen, Jian-Jia;Kuo, Tei-Wei;Li, Hsiang-Pang;Lue, Hang-Ting; Chang, Yu-Ming; Chang, Yuan-Hao; Chen, Jian-Jia; Kuo, Tei-Wei; Li, Hsiang-Pang; Lue, Hang-Ting; TEI-WEI KUO |
| 國立交通大學 |
2019-04-02T06:04:53Z |
Study of Thyristor-Mode Dual-Channel NAND Flash Devices
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Lo, Roger; Lue, Hang-Ting; Chen, Weichen; Du, Pei-Ying; Hsu, Tzu-Hsuan; Hou, Tuo-Hung; Wang, Keh-Chung; Lu, Chih-Yuan |
| 國立交通大學 |
2018-08-21T05:56:34Z |
Modeling the Variability Caused by Random Grain Boundary and Trap-location Induced Asymmetrical Read Behavior for a Tight-pitch Vertical Gate 3D NAND Flash Memory Using Double-Gate Thin-Film Transistor (TFT) Device
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Hsiao, Yi-Hsuan; Lue, Hang-Ting; Chen, Wei-Chen; Chen, Chih-Ping; Chang, Kuo-Ping; Shih, Yen-Hao; Tsui, Bing-Yue; Lu, Chih-Yuan |
| 國立交通大學 |
2017-04-21T06:49:40Z |
STUDY OF GATE-INJECTION OPERATED SONOS-TYPE DEVICES USING THE GATE-SENSING AND CHANNEL-SENSING (GSCS) METHOD
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Du, Pei-Ying; Lue, Hang-Ting; Wang, Szu-Yu; Huang, Tiao-Yuan; Hsieh, Kuang-Yeu; Liu, Rich; Lu, Chih-Yuan |
| 國立交通大學 |
2017-04-21T06:49:32Z |
Reliability Study of MANOS with and without a SiO2 Buffer Layer and BE-MANOS Charge-Trapping NAND Flash Devices
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Liao, Chien-Wei; Lai, Sheng-Chih; Lue, Hang-Ting; Yang, Ming-Jui; Shen, Chin-Yen; Lue, Yi-Hsien; Huang, Yu-Fong; Hsieh, Jung-Yu; Wang, Szu-Yu; Luo, Guang-Li; Chien, Chao-Hsin; Hsieh, Kuang-Yeu; Liu, Rich; Lu, Chih-Yuan |
| 國立交通大學 |
2017-04-21T06:49:17Z |
A Study of Blocking and Tunnel Oxide Engineering on Double-Trapping (DT) BE-SONOS Performance
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Lo, Roger; Du, Pei-Ying; Hsu, Tzu-Hsuan; Wu, Chen-Jun; Guo, Jung-Yi; Cheng, Chun-Min; Lue, Hang-Ting; Shih, Yen-Hao; Hou, Tuo-Hung; Hsieh, Kuang-Yeu; Lu, Chih-Yuan |
| 國立交通大學 |
2017-04-21T06:48:56Z |
An oxide-buffered BE-MANOS charge-trapping device and the role of Al2O3
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Lai, Sheng-Chih; Lue, Hang-Ting; Liao, Chien-Wei; Huang, Yu-Fong; Yang, Ming-Jui; Lue, Yi-Hsien; Wu, Tai-Bor; Hsieh, Jung-Yu; Wang, Szu-Yu; Hong, Shih-Ping; Hsu, Fang-Hao; Shen, Chih-Yen; Luo, Guang-Li; Chien, Chao-Hsin; Hsieh, Kuan-Yeu; Liu, Rich; Lu, Chih-Yuan |
| 國立交通大學 |
2017-04-21T06:48:54Z |
Highly reliable MA BE-SONOS (Metal-Al2O3 bandgap engineered SONOS) using a SiO2 buffer layer
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Lai, Sheng-Chih; Lue, Hang-Ting; Liao, Chien-Wei; Wu, Tai-Bor; Yang, Ming-Jui; Lue, Yi-Hsien; Hsieh, Jung-Yu; Wang, Szu-Yu; Luo, Guang-Li; Chien, Chao-Hsin; Hsieh, Kuang-Yeu; Liu, Rich; Lu, Chih-Yuan |
| 國立交通大學 |
2015-12-02T02:59:28Z |
Ultra-High Bit Density 3D NAND Flash-Featuring-Assisted Gate Operation
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Hsiao, Yi-Hsuan; Lue, Hang-Ting; Chen, Wei-Chen; Tsui, Bing-Yue; Hsieh, Kuang-Yeu; Lu, Chih-Yuan |
| 國立交通大學 |
2015-12-02T02:59:12Z |
Impact of V-pass Interference on Charge-Trapping NAND Flash Memory Devices
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Hsiao, Yi-Hsuan; Lue, Hang-Ting; Chen, Wei-Chen; Chang, Kuo-Pin; Tsui, Bing-Yue; Hsieh, Kuang-Yeu; Lu, Chih-Yuan |
| 國立交通大學 |
2015-11-26T00:56:58Z |
三維快閃記憶體技術及其特殊現象之研究
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蕭逸璿; Hsiao, Yi-Hsuan; 崔秉鉞; 呂函庭; Tsui, Bing-Yue; Lue, Hang-Ting |
| 國立交通大學 |
2014-12-12T02:26:21Z |
以閘極感應與通道感應方法與脈衝電流電壓技術分析SONOS類型元件中捕捉電荷之特性
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杜姵瑩; Du, Pei-Ying; 黃調元; 呂函庭; Huang, Tiao-Yuan; Lue, Hang-Ting |
| 國立交通大學 |
2014-12-08T15:36:19Z |
Modeling the Impact of Random Grain Boundary Traps on the Electrical Behavior of Vertical Gate 3-D NAND Flash Memory Devices
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Hsiao, Yi-Hsuan; Lue, Hang-Ting; Chen, Wei-Chen; Chang, Kuo-Pin; Shih, Yen-Hao; Tsui, Bing-Yue; Hsieh, Kuang-Yeu; Lu, Chih-Yuan |
| 國立交通大學 |
2014-12-08T15:13:23Z |
Study of the gate-sensing and channel-sensing transient analysis method for monitoring the charge vertical location of SONOS-type devices
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Du, Pei-Ying; Lue, Hang-Ting; Wang, Szu-Yu; Lai, Erh-Kun; Huang, Tiao-Yuan; Hsieh, Kuang-Yeu; Liu, Rich; Lu, Chih-Yuan |
| 國立交通大學 |
2014-12-08T15:11:05Z |
A study of gate-sensing and channel-sensing (GSCS) transient analysis method - Part II: Study of the intra-nitride behaviors and reliability of SONOS-type devices
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Du, Pei-Ying; Lue, Hang-Ting; Wang, Szu-Yu; Huang, Tiao-Yuan; Hsieh, Kuang-Yeu; Liu, Rich; Lu, Chih-Yuan |
| 國立交通大學 |
2014-12-08T15:09:44Z |
Pulse-IV Characterization of Charge-Transient Behavior of SONOS-Type Devices With or Without a Thin Tunnel Oxide
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Du, Pei-Ying; Lue, Hang-Ting; Wang, Szu-Yu; Huang, Tiaci-Yuan; Hsieh, Kuang-Yeu; Liu, Rich; Lu, Chih-Yuan |
Showing items 1-17 of 17 (1 Page(s) Totally)
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