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Showing items 11-17 of 17 (1 Page(s) Totally)
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| 國立交通大學 |
2015-12-02T02:59:12Z |
Impact of V-pass Interference on Charge-Trapping NAND Flash Memory Devices
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Hsiao, Yi-Hsuan; Lue, Hang-Ting; Chen, Wei-Chen; Chang, Kuo-Pin; Tsui, Bing-Yue; Hsieh, Kuang-Yeu; Lu, Chih-Yuan |
| 國立交通大學 |
2015-11-26T00:56:58Z |
三維快閃記憶體技術及其特殊現象之研究
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蕭逸璿; Hsiao, Yi-Hsuan; 崔秉鉞; 呂函庭; Tsui, Bing-Yue; Lue, Hang-Ting |
| 國立交通大學 |
2014-12-12T02:26:21Z |
以閘極感應與通道感應方法與脈衝電流電壓技術分析SONOS類型元件中捕捉電荷之特性
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杜姵瑩; Du, Pei-Ying; 黃調元; 呂函庭; Huang, Tiao-Yuan; Lue, Hang-Ting |
| 國立交通大學 |
2014-12-08T15:36:19Z |
Modeling the Impact of Random Grain Boundary Traps on the Electrical Behavior of Vertical Gate 3-D NAND Flash Memory Devices
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Hsiao, Yi-Hsuan; Lue, Hang-Ting; Chen, Wei-Chen; Chang, Kuo-Pin; Shih, Yen-Hao; Tsui, Bing-Yue; Hsieh, Kuang-Yeu; Lu, Chih-Yuan |
| 國立交通大學 |
2014-12-08T15:13:23Z |
Study of the gate-sensing and channel-sensing transient analysis method for monitoring the charge vertical location of SONOS-type devices
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Du, Pei-Ying; Lue, Hang-Ting; Wang, Szu-Yu; Lai, Erh-Kun; Huang, Tiao-Yuan; Hsieh, Kuang-Yeu; Liu, Rich; Lu, Chih-Yuan |
| 國立交通大學 |
2014-12-08T15:11:05Z |
A study of gate-sensing and channel-sensing (GSCS) transient analysis method - Part II: Study of the intra-nitride behaviors and reliability of SONOS-type devices
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Du, Pei-Ying; Lue, Hang-Ting; Wang, Szu-Yu; Huang, Tiao-Yuan; Hsieh, Kuang-Yeu; Liu, Rich; Lu, Chih-Yuan |
| 國立交通大學 |
2014-12-08T15:09:44Z |
Pulse-IV Characterization of Charge-Transient Behavior of SONOS-Type Devices With or Without a Thin Tunnel Oxide
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Du, Pei-Ying; Lue, Hang-Ting; Wang, Szu-Yu; Huang, Tiaci-Yuan; Hsieh, Kuang-Yeu; Liu, Rich; Lu, Chih-Yuan |
Showing items 11-17 of 17 (1 Page(s) Totally)
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