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Institution Date Title Author
國立交通大學 2019-04-02T05:59:32Z Reducing threshold voltage shifts in amorphous silicon thin film transistors by hydrogenating the gate nitride prior to amorphous silicon deposition Tsai, JW; Huang, CY; Tai, YH; Cheng, HC; Su, FC; Luo, FC; Tuan, HC
國立交通大學 2019-04-02T05:58:44Z The instability characteristics of amorphous silicon thin film transistors with various interfacial and bulk defect states Cheng, HC; Tsai, JW; Huang, CY; Luo, FC; Tuan, HC
國立交通大學 2014-12-08T15:01:36Z The electrical characteristics of the amorphous silicon thin film transistors with dual intrinsic layers Tsai, JW; Cheng, HC; Chou, A; Su, FC; Luo, FC; Tuan, HC
國立交通大學 2014-12-08T15:01:29Z Reducing threshold voltage shifts in amorphous silicon thin film transistors by hydrogenating the gate nitride prior to amorphous silicon deposition Tsai, JW; Huang, CY; Tai, YH; Cheng, HC; Su, FC; Luo, FC; Tuan, HC
國立交通大學 2014-12-08T15:01:25Z The instability characteristics of amorphous silicon thin film transistors with various interfacial and bulk defect states Cheng, HC; Tsai, JW; Huang, CY; Luo, FC; Tuan, HC

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