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Showing items 1-5 of 5 (1 Page(s) Totally)
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| 國立交通大學 |
2019-04-02T05:59:32Z |
Reducing threshold voltage shifts in amorphous silicon thin film transistors by hydrogenating the gate nitride prior to amorphous silicon deposition
|
Tsai, JW; Huang, CY; Tai, YH; Cheng, HC; Su, FC; Luo, FC; Tuan, HC |
| 國立交通大學 |
2019-04-02T05:58:44Z |
The instability characteristics of amorphous silicon thin film transistors with various interfacial and bulk defect states
|
Cheng, HC; Tsai, JW; Huang, CY; Luo, FC; Tuan, HC |
| 國立交通大學 |
2014-12-08T15:01:36Z |
The electrical characteristics of the amorphous silicon thin film transistors with dual intrinsic layers
|
Tsai, JW; Cheng, HC; Chou, A; Su, FC; Luo, FC; Tuan, HC |
| 國立交通大學 |
2014-12-08T15:01:29Z |
Reducing threshold voltage shifts in amorphous silicon thin film transistors by hydrogenating the gate nitride prior to amorphous silicon deposition
|
Tsai, JW; Huang, CY; Tai, YH; Cheng, HC; Su, FC; Luo, FC; Tuan, HC |
| 國立交通大學 |
2014-12-08T15:01:25Z |
The instability characteristics of amorphous silicon thin film transistors with various interfacial and bulk defect states
|
Cheng, HC; Tsai, JW; Huang, CY; Luo, FC; Tuan, HC |
Showing items 1-5 of 5 (1 Page(s) Totally)
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