|
"luo guang li"的相關文件
顯示項目 1-10 / 54 (共6頁)
1 2 3 4 5 6 > >>
每頁顯示[10|25|50]項目
| 臺大學術典藏 |
2021-04-21T23:30:01Z |
Schottky Barrier Height Modulation of Metal/n-GeSn Contacts Featuring Low Contact Resistivity by in Situ Chemical Vapor Deposition Doping and NiGeSn Alloy Formation
|
Chuang, Yen; Liu, Chia You; Kao, Hsiang Shun; Tien, Kai Ying; Luo, Guang Li; JIUN-YUN LI |
| 臺大學術典藏 |
2021-01-19T12:08:35Z |
Electron Mobility Enhancement in GeSn n-Channel MOSFETs by Tensile Strain
|
Chuang, Yen; Liu, Chia You; Luo, Guang Li; JIUN-YUN LI |
| 國立交通大學 |
2019-08-02T02:18:35Z |
Improving Interface State Density and Thermal Stability of High-kappa Gate Stack Through High-Vacuum Annealing on Si0.5Ge0.5
|
Lee, Wei-Li; Yu, Cheng-Yu; Zhang, Jun-Lin; Luo, Guang-Li; Chien, Chao-Hsin |
| 國立交通大學 |
2019-04-03T06:47:55Z |
Nearly Dislocation-free Ge/Si Heterostructures by Using Nanoscale Epitaxial Growth Method
|
Luo, Guang-Li; Ko, Chih-Hsin; Wann, Clement H.; Chung, Cheng-Ting; Han, Zong-You; Cheng, Chao-Ching; Chang, Chun-Yen; Lin, Hau-Yu; Chien, Chao-Hsin |
| 國立交通大學 |
2019-04-03T06:44:37Z |
Microwave Annealing for NiSiGe Schottky Junction on SiGe P-Channel
|
Lin, Yu-Hsien; Tsai, Yi-He; Hsu, Chung-Chun; Luo, Guang-Li; Lee, Yao-Jen; Chien, Chao-Hsin |
| 國立交通大學 |
2019-04-03T06:43:30Z |
Ge/IIIV fin field-effect transistor common gate process and numerical simulations
|
Chen, Bo-Yuan; Chen, Jiann-Lin; Chu, Chun-Lin; Luo, Guang-Li; Lee, Shyong; Chang, Edward Yi |
| 國立交通大學 |
2019-04-02T06:00:50Z |
Integration of microwave-annealed oxidation on germanium metal-oxide-semiconductor devices
|
Hsu, Chung-Chun; Chi, Wei-Chun; Tsai, Yi-He; Tsai, Ming-Li; Wang, Shin-Yuan; Chou, Chen-Han; Zhang, Jun Lin; Luo, Guang-Li; Chien, Chao-Hsin |
| 國立交通大學 |
2019-04-02T06:00:11Z |
Junction and Device Characteristics of Gate-Last Ge p- and n-MOSFETs With ALD-Al2O3 Gate Dielectric
|
Cheng, Chao-Ching; Chien, Chao-Hsin; Luo, Guang-Li; Lin, Ching-Lun; Chen, Hung-Sen; Liu, Jun-Cheng; Kei, Chi-Chung; Hsiao, Chien-Nan; Chang, Chun-Yen |
| 國立交通大學 |
2018-08-21T05:54:30Z |
Fully Depleted GeOI-Channel Junctionless pMOSFET with a Low-Resistance-Raised NiGe Alloy S/D
|
Lee, Wei-Li; Hsu, Chung-Chun; Chung, Cheng-Ting; Lu, Yu-Hung; Luo, Guang-Li; Chien, Chao-Hsin |
| 國立交通大學 |
2018-08-21T05:53:26Z |
Phase-separation phenomenon of NiGePt alloy on n-Ge by microwave annealing
|
Hsu, Chung-Chun; Lin, Kun-Lin; Chi, Wei-Chun; Chou, Chen-Han; Luo, Guang-Li; Lee, Yao-Jen; Chien, Chao-Hsin |
顯示項目 1-10 / 54 (共6頁)
1 2 3 4 5 6 > >>
每頁顯示[10|25|50]項目
|
