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Institution Date Title Author
國立交通大學 2014-12-16T06:16:17Z Growth of GaAs epitaixial layers on Si substrate by using a novel GeSi buffer layer Chang, Edward Y.; Luo, Guangli; Yang, Tsung Hsi; Chang, Chung Yen
國立交通大學 2014-12-16T06:16:05Z Growth of GaAs expitaxial layers on Si substrate by using a novel GeSi buffer layer Chang, Edward Y.; Luo, Guangli; Yang, Tsung-Hsi; Chang, Chun-Yen
國立交通大學 2014-12-16T06:16:04Z Architecture of a n-type metal-oxide-semiconductor transistor with a compressive strained silicon-germanium channel fabricated on a silicon (110) substrate Luo, Guangli; Chien, Chao-Hsin; Yang, Tsung-Hsi; Chang, Chun-Yen
國立交通大學 2014-12-08T15:15:35Z Growth behaviour of Ge nano-islands on the nanosized Si{111} facets bordering on two {100} planes Ferng, Shyh-Shin; Yang, Tsung-Hsi; Luo, Guangli; Yang, Kai-Ming; Hsieh, Ming-Feng; Lin, Deng-Sung

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