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Institution Date Title Author
國立交通大學 2018-08-21T05:53:43Z Effects of a capping oxide layer on polycrystalline-silicon thin-film transistors fabricated by continuous-wave laser crystallization Li, Yi-Shao; Wu, Chun-Yi; Chou, Chia-Hsin; Liao, Chan-Yu; Chuang, Kai-Chi; Luo, Jun-Dao; Li, Wei-Shuo; Cheng, Huang-Chung
國立交通大學 2018-08-21T05:53:43Z Impact of AlOx layer on resistive switching characteristics and device-to-device uniformity of bilayered HfOx-based resistive random access memory devices Chuang, Kai-Chi; Chung, Hao-Tung; Chu, Chi-Yan; Luo, Jun-Dao; Li, Wei-Shuo; Li, Yi-Shao; Cheng, Huang-Chung
國立交通大學 2018-08-21T05:53:21Z Effects of post-metal annealing on the electrical characteristics of HfOx-based resistive switching memory devices Chuang, Kai-Chi; Lin, Kuan-Yu; Luo, Jun-Dao; Li, Wei-Shuo; Li, Yi-Shao; Chu, Chi-Yan; Cheng, Huang-Chung
國立成功大學 2014-08 Nonlinear bidirectional selector without rare materials for stackable cross-bar bipolar memory applications Lee, Min-Hung; Luo, Jun-Dao; Cheng, Chih-Ching; Huang, Jian-Shiou; Chueh, Yu-Lun; Chen, Chih-Wei; Wu, Tai-Yuan; Chen, Yu-Sheng; Lee, Heng-Yuan; Chen, Fred; Tsai, Ming-Jinn

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