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Showing items 1-7 of 7 (1 Page(s) Totally)
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| 國立交通大學 |
2014-12-08T15:45:38Z |
Shallow-trench isolation with raised-field-oxide structure
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Chen, CM; Chang, CY; Chou, JW; Lur, W; Sun, SW |
| 國立交通大學 |
2014-12-08T15:45:07Z |
Effects of a new combination of additives in electroplating solution on the properties of Cu films in ULSI applications
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Hu, JC; Chang, TC; Wu, CW; Chen, LJ; Hsiung, CS; Hsieh, WY; Lur, W; Yew, TR |
| 國立交通大學 |
2014-12-08T15:42:14Z |
Effective repair to ultra-low-k dielectric material (k-2.0) by hexamethyidisilazane treatment
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Mor, YS; Chang, TC; Liu, PT; Tsai, TM; Chen, CW; Yan, ST; Chu, CJ; Wu, WF; Pan, FM; Lur, W; Sze, SM |
| 國立交通大學 |
2014-12-08T15:41:53Z |
Trimethylchlorosilane treatment of ultralow dielectric constant material after photoresist removal processing
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Chang, TC; Mor, YS; Liu, PT; Tsai, TM; Chen, CW; Chu, CJ; Pan, FM; Lur, W; Sze, SM |
| 國立交通大學 |
2014-12-08T15:27:41Z |
Low temperature processed poly-Si thin-film transistors with thinner LPD-SiO2 as gate insulator and its reliability
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Fan, CL; Yeh, CF; Tsai, HK; Lur, W; Yen, PW |
| 國立交通大學 |
2014-12-08T15:04:34Z |
INTERFACIAL REACTIONS OF TITANIUM THIN-FILMS ON ION-IMPLANTED (001) SI
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LIAUH, HR; CHEN, MC; CHEN, JF; CHEN, LJ; LUR, W; CHU, CH |
| 國立交通大學 |
2014-12-08T15:03:31Z |
BOND-STRUCTURE CHANGES OF LIQUID-PHASE DEPOSITED OXIDE (SIO2-XFX) ON N2 ANNEALING
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YEH, CF; CHEN, CL; LUR, W; YEN, PW |
Showing items 1-7 of 7 (1 Page(s) Totally)
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