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Showing items 141-150 of 158  (16 Page(s) Totally)
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Institution Date Title Author
國立中山大學 1987 Heteroepitaxial Growth of InP Directly on Si by Low Pressure Metalorganic Chemical Vapor Depositions M.K. Lee; D.S. Wuu; H.H. Tung
國立中山大學 1987 Gallium Arsenide Grown on Silicon From Trimethylgallium and Arsine by Metalorganic Chemical Vapor Deposition M.K. Lee;K.Y. Yu;Y.F. Lin;J.H. Chang;K.C. Hwang
國立中山大學 1987 Vapor Phase Epitaxy of Indium Phosphide Using Metalorganic Adduct Compound M.K. Lee;D.S. Wu;H.H. Tung
國立中山大學 1987 InP Epitaxial Growth by Low Pressure Metalorganic Chemical Vapor Deposition Using Adduct Source M.K. Lee;D.S. Wu;H.H. Tung
國立中山大學 1986 Tin-Doped GaAs Epilayers Grown by Low Pressure Metalorganic Chemical Vapor Deposition Using Triethylgallium and Tetraethyltin M.K. Lee; Y.C. Chang
國立中山大學 1986 Growth and Characterization of ZnSe Epilayers by Low Pressure MOCVD M.K. Lee
國立中山大學 1986 Low Cost ZnSe Thin Film Prepared by Organometallic Chemical Vapor Deposition M.K. Lee
國立中山大學 1984 Growth Mechanisms of the GaAs LPMOCVD Growth C.Y. Chang;M.K. Lee;Y.K. Su;Y.C. Chou;L.P. Chen
國立中山大學 1983 Enhancement of Growth Rate due to Tin Doping in GaAs Epilayer Grown by Low Pressure Metalorgarlic Chemical Vapor Deposition M.K. Lee; C.Y. Chang; Y.K. Su; W.C. Hsu
國立中山大學 1983 Control of Silicon Dioxide Properties by RF Sputtering M.K. Lee; C.Y. Chang; I.S. Tzeng; Y.K. Su

Showing items 141-150 of 158  (16 Page(s) Totally)
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View [10|25|50] records per page