臺灣學術機構典藏系統 (Taiwan Academic Institutional Repository, TAIR)

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	2019臺灣學術機構典藏研討會
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Showing items 121-145 of 158 (7 Page(s) Totally)
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Institution	Date	Title	Author
國立中山大學	1989	Material Properties of InP-on-Si Grown by Low-Pressure Organometallic Vapor Phase Epitaxy	D.S. Wuu; H.H. Tung; R.H. Horng; M.K. Lee
國立中山大學	1989	Strain Variations in Heteroepitaxial InP-on-Si Grown by Low-Pressure Metalorganic Chemical Vapor Deposition	D.S. Wuu; R.H. Horng; M.K. Lee
國立中山大學	1989	ZnSe/Si Hybrid Material System Prepared by Low-Pressure Metalorganic Chemical Vapor Deposition	M.K. Lee;M.Y. Yeh;C.C. Chang
國立中山大學	1989	Compound Semiconductors on Silicon Technology	M.K. Lee
國立中山大學	1988	Heteroepitaxial Growth of Ga(0.51)In(0.49)P/GaAs Epilayers on Si Substrates bv Low-Pressure Organometallic Chemical Vapor Deposition	R.H. Horng; D.S. We; M.K. Lee
國立中山大學	1988	Growth and Characterization of InP/GaAs Epilayers on Si Substrates by Low-pressure Metalorganic Chemical Vapor Phase Epitaxy	M.K. Lee; D.S. Wuu; H.H. Jung; K.Y. Yu; K.C. Huang
國立中山大學	1988	Heteroepitaxial Growth of ZnSe on (111)Si by Low-pressure Metalorganic Chemical Vapor Deposition	M.K. Lee; J.H. Chang; M.Y. Yeh; Y.F. Lin
國立中山大學	1988	Growth and Characterization of InP Epilayers on ZnSe-coated Si Substrates by Low-Pressure Metalorganic Chemical Vapor Deposition	M.K. Lee; D.S. Wuu; H.H. Tung; J.H. Chang; Y.F. Lin
國立中山大學	1988	Isoelectronic Doping in GaAs Epilayers Grown by Molecular Beam Epitaxy	M.K. Lee; T.H. Chiu; A. Dayem; E. Agyekum
國立中山大學	1988	Heteroepitaxial Growth of Indium Phosphide on Silicon by MOCVD Using Adduct Source	M.K. Lee; D.S. We; H.H. Tung
國立中山大學	1988	Characterization of InP/GaAs Epilayers Grown on Si Substrates by Low-Pressure Organometallic Chemical Vapor Phase Epitaxy	M.K. Lee; D.S. Wuu; H.H. Tung; K.Y. Yu; K.C. Huang
國立中山大學	1988	MOCVD Growth of InP on Si by Using a GaAs Buffer Layer	M.K. Lee;D.S. Wuu;H.H. Tung;K.Y. Yu;K.C. Huang
國立中山大學	1988	Heteroepitaxial Grown of ZnSe on GaAs/Si Substrates by Low-Pressure Metalorganic Chemical Vapor Deposition	M.K. Lee;J.H. Chang;M.Y. Yeh;Y.F. Lin;K.C. Huang
國立中山大學	1988	Heteroepitaxial Growth of ZnSe on (111)Si by Low-Pressure Metalorganic Chemical Vapor Deposition	M.K. Lee;J.H. Chang;M.Y. Yeh;K.C. Huang
國立中山大學	1988	Organometallic growth and Material Properties of InP-on-Si	M.K. Lee;D.S. Wuu;H.H. Tung;R.H. Horng;K.C. Huang
國立中山大學	1987	ZnSe Thin Film Prepared by Metal-Organic Chemical Vapor Deposition	M.K. Lee
國立中山大學	1987	Low Pressure Metalorganic Vapor Phase Epitaxy of InP Using a Trimethylindium- Trimethylphosphine Adduct Source	M.K. Lee; D.S. Wuu; H.H. Tung
國立中山大學	1987	Heteroepitaxial Growth of InP on GaAs by Low-Pressure Metalorganic Chemical Vapor Deposition	M.K. Lee; D.S. Wuu; H.H. Tung
國立中山大學	1987	Gallium Arsenide Growth on Silicon From Triethylgallium and Arsine by Metalorganic Chemical Vapor Deposition	M.K. Lee;K.Y. Yu;Y.F. Lin
國立中山大學	1987	Epitaxial Growth of Indium Phosphide on GaAs by Low Pressure Metalorganic Chemical Vapor Deposition	M.K. Lee; D.S. Wuu; H.H. Tung
國立中山大學	1987	Heteroepitaxial Growth of InP Directly on Si by Low Pressure Metalorganic Chemical Vapor Depositions	M.K. Lee; D.S. Wuu; H.H. Tung
國立中山大學	1987	Gallium Arsenide Grown on Silicon From Trimethylgallium and Arsine by Metalorganic Chemical Vapor Deposition	M.K. Lee;K.Y. Yu;Y.F. Lin;J.H. Chang;K.C. Hwang
國立中山大學	1987	Vapor Phase Epitaxy of Indium Phosphide Using Metalorganic Adduct Compound	M.K. Lee;D.S. Wu;H.H. Tung
國立中山大學	1987	InP Epitaxial Growth by Low Pressure Metalorganic Chemical Vapor Deposition Using Adduct Source	M.K. Lee;D.S. Wu;H.H. Tung
國立中山大學	1986	Tin-Doped GaAs Epilayers Grown by Low Pressure Metalorganic Chemical Vapor Deposition Using Triethylgallium and Tetraethyltin	M.K. Lee; Y.C. Chang

Showing items 121-145 of 158 (7 Page(s) Totally)
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