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Showing items 1-6 of 6 (1 Page(s) Totally) 1 View [10|25|50] records per page
臺大學術典藏 |
2018-09-10T09:24:39Z |
InGaP/GaAs0.57P0.28Sb0.15/GaAs double HBT with weakly type-II base/collector junction
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Y. C. Chin,;H. H. Lin,;C. H. Huang,;M. N. Tseng,; Y. C. Chin,; H. H. Lin,; C. H. Huang,; M. N. Tseng,; HAO-HSIUNG LIN |
臺大學術典藏 |
2018-09-10T09:24:39Z |
InGaP/GaAs0.57P0.28Sb0.15/GaAs double HBT with weakly type-II base/collector junction
|
Y. C. Chin,;H. H. Lin,;C. H. Huang,;M. N. Tseng,; Y. C. Chin,; H. H. Lin,; C. H. Huang,; M. N. Tseng,; HAO-HSIUNG LIN |
臺大學術典藏 |
2018-09-10T08:17:48Z |
In0.46Ga0.54P0.98Sb0.02/GaAs: Its band offset and application to heterojunction bipolar transistor
|
Y. C. Chin,;H. H. Lin,;C. H. Huang,;M. N. Tseng,; Y. C. Chin,; H. H. Lin,; C. H. Huang,; M. N. Tseng,; HAO-HSIUNG LIN |
臺大學術典藏 |
2018-09-10T08:17:48Z |
In0.46Ga0.54P0.98Sb0.02/GaAs: Its band offset and application to heterojunction bipolar transistor
|
Y. C. Chin,;H. H. Lin,;C. H. Huang,;M. N. Tseng,; Y. C. Chin,; H. H. Lin,; C. H. Huang,; M. N. Tseng,; HAO-HSIUNG LIN |
臺大學術典藏 |
2018-09-10T07:41:15Z |
Comparison of InGaPSb/GaAs and InGaP/GaAs HBTs grown by MOCVD
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Y. C. Chin;H. H. Lin;C. H. Huang;M. N. Tseng; Y. C. Chin; H. H. Lin; C. H. Huang; M. N. Tseng; HAO-HSIUNG LIN |
臺大學術典藏 |
2018-09-10T07:41:15Z |
Comparison of InGaPSb/GaAs and InGaP/GaAs HBTs grown by MOCVD
|
Y. C. Chin;H. H. Lin;C. H. Huang;M. N. Tseng; Y. C. Chin; H. H. Lin; C. H. Huang; M. N. Tseng; HAO-HSIUNG LIN |
Showing items 1-6 of 6 (1 Page(s) Totally) 1 View [10|25|50] records per page
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