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Showing items 11-13 of 13 (2 Page(s) Totally)
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| 國立交通大學 |
2014-12-08T15:21:21Z |
A New and Simple Experimental Approach to Characterizing the Carrier Transport and Reliability of Strained CMOS Devices in the Quasi-Ballistic Regime
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Hsieh, E. R.; Chung, Steve S.; Liu, P. W.; Chiang, W. T.; Tsai, C. H.; Teng, W. Y.; Li, C. I.; Kuo, T. F.; Wang, Y. R.; Yang, C. L.; Tsai, C. T.; Ma, G. H. |
| 國立交通大學 |
2014-12-08T15:10:03Z |
The channel backscattering characteristics of sub-100nm CMOS devices with different channel/substrate orientations
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Tsai, Y. J.; Chung, Steve S.; Liu, P. W.; Tsai, C. H.; Lin, Y. H.; Tsai, C. T.; Ma, G. H.; Chien, S. C.; Sun, S. W. |
| 國立交通大學 |
2014-12-08T15:07:36Z |
Technology roadmaps on the ballistic transport in strain engineered nanoscale CMOS devices
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Chung, Steve S.; Tsai, Y. J.; Tsai, C. H.; Liu, P. W.; Lin, Y. H.; Tsai, C. T.; Ma, G. H.; Chien, S. C.; Sun, S. W. |
Showing items 11-13 of 13 (2 Page(s) Totally)
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