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Showing items 1-7 of 7 (1 Page(s) Totally)
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| 國立交通大學 |
2014-12-08T15:37:17Z |
Valence-band tunneling induced low frequency noise in ultrathin oxide (15 angstrom) n-type metal-oxide-semiconductor field effect transistors
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Wu, JW; You, JW; Ma, HC; Cheng, CC; Chang, CS; Huang, GW; Wang, T |
| 國立交通大學 |
2014-12-08T15:25:27Z |
Investigation of post-NBTI stress recovery in pMOSFETs by direct measurement of single oxide charge de-trapping
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Chan, CT; Ma, HC; Tang, CJ; Wang, TH |
| 國立交通大學 |
2014-12-08T15:25:22Z |
Single-electron emission of traps in HfSiON as high-k gate dielectric for MOSFETs
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Chan, CT; Tang, CJ; Kuo, CH; Ma, HC; Tsai, CW; Wang, HCH; Chi, MH; Wang, T |
| 國立交通大學 |
2014-12-08T15:25:22Z |
Low frequency noise degradation in ultra-thin oxide (I5A) analog n-MOSFETs resulting from valence-band tunneling
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Wu, JW; You, JW; Ma, HC; Cheng, CC; Hsu, C; Huang, GW; Chang, CS; Wang, T |
| 國立交通大學 |
2014-12-08T15:18:29Z |
Excess low-frequency noise in ultrathin oxide n-MOSFETs arising from valence-band electron tunneling
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Wu, JW; You, JW; Ma, HC; Cheng, CC; Hsu, CF; Chang, CS; Huang, GW; Wang, TH |
| 國立暨南國際大學 |
1998 |
志願服務工作者參與類型之初探：以埔里五個團體的志工為例
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馬慧君; Ma, HC |
| 國立暨南國際大學 |
1998 |
志願服務工作者參與類型之初探：以埔里五個團體的志工為例
|
馬慧君 ; Ma, HC |
Showing items 1-7 of 7 (1 Page(s) Totally)
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