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Showing items 1-7 of 7  (1 Page(s) Totally)
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Institution Date Title Author
國立交通大學 2014-12-08T15:37:17Z Valence-band tunneling induced low frequency noise in ultrathin oxide (15 angstrom) n-type metal-oxide-semiconductor field effect transistors Wu, JW; You, JW; Ma, HC; Cheng, CC; Chang, CS; Huang, GW; Wang, T
國立交通大學 2014-12-08T15:25:27Z Investigation of post-NBTI stress recovery in pMOSFETs by direct measurement of single oxide charge de-trapping Chan, CT; Ma, HC; Tang, CJ; Wang, TH
國立交通大學 2014-12-08T15:25:22Z Single-electron emission of traps in HfSiON as high-k gate dielectric for MOSFETs Chan, CT; Tang, CJ; Kuo, CH; Ma, HC; Tsai, CW; Wang, HCH; Chi, MH; Wang, T
國立交通大學 2014-12-08T15:25:22Z Low frequency noise degradation in ultra-thin oxide (I5A) analog n-MOSFETs resulting from valence-band tunneling Wu, JW; You, JW; Ma, HC; Cheng, CC; Hsu, C; Huang, GW; Chang, CS; Wang, T
國立交通大學 2014-12-08T15:18:29Z Excess low-frequency noise in ultrathin oxide n-MOSFETs arising from valence-band electron tunneling Wu, JW; You, JW; Ma, HC; Cheng, CC; Hsu, CF; Chang, CS; Huang, GW; Wang, TH
國立暨南國際大學 1998 志願服務工作者參與類型之初探:以埔里五個團體的志工為例 馬慧君; Ma, HC
國立暨南國際大學 1998 志願服務工作者參與類型之初探:以埔里五個團體的志工為例  馬慧君 ; Ma, HC

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