| 臺大學術典藏 |
2018-09-10T04:49:37Z |
Nanostructures and carrier localization behaviors of green-luminescence InGaN/GaN quantum-well structures of various silicon-doping conditions
|
Lin, E.-C.; Wu, C.-M.; Yang, C.C.; Yang, J.-R.; Rosenauer, A.; Ma, K.-J.; Shi, S.-C.; Chen, L.C.; Pan, C.-C.; Chyi, J.-I.; Cheng, Y.-C.; Lin, E.-C.; Wu, C.-M.; Yang, C.C.; Yang, J.-R.; Rosenauer, A.; Ma, K.-J.; Shi, S.-C.; Chen, L.C.; Pan, C.-C.; Chyi, J.-I.Cheng, Yung-Chen; Lin, En-Chiang; Wu, Cheng-Ming; Yang, C. C.; Yang, Jer-Ren; Rosenauer,; reas; Ma, Kung-Jen; Shi, Shih-Chen; Chen, L. C.; Pan, Chang-Chi; Chyi, Jen-Inn; CHIH-CHUNG YANG; Yang, Jer-Ren |
| 臺大學術典藏 |
2018-09-10T04:29:29Z |
Effects of thermal annealing on InGaN/GaN quantum well structures with silicon doping
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Cheng, Yung-Chen; Lin, En-Chiang; Feng, Shih-Wei; Wang, Hsiang-Chen; Yang, C.C.; Ma, Kung-Jen; Shi, Shih-Chen; Chen, L.C.; Pan, Chang-Chi; Chyi, Jen-Inn; CHIH-CHUNG YANG |
