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Showing items 11-33 of 33 (1 Page(s) Totally)
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| 國立交通大學 |
2014-12-08T15:14:34Z |
Impact of high-k offset spacer in 65-nm node SOI devices
|
Ma, Ming-Wen; Wu, Chien-Hung; Yang, Tsung-Yu; Kao, Kuo-Hsing; Wu, Woei-Cherng; Wang, Shui-Jinn; Chao, Tien-Sheng; Lei, Tan-Fu |
| 國立交通大學 |
2014-12-08T15:14:11Z |
A reliability model for low-temperature polycrystalline silicon thin-film transistors
|
Chen, Chih-Yang; Lee, Jam-Wem; Lee, Po-Hao; Chen, Wei-Cheng; Lin, Hsiao-Yi; Yeh, Kuan-Lin; Ma, Ming-Wen; Wang, Shen-De; Lei, Tan-Fu |
| 國立交通大學 |
2014-12-08T15:12:56Z |
Performance and interface characterization for contact etch stop layer-strained nMOSFET with HfO2 gate dielectrics under pulsed-IV measurement
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Wu, Woei-Cherng; Chao, Tien-Sheng; Chiu, Te-Hsin; Wang, Jer-Chyi; Lai, Chao-Sung; Ma, Ming-Wen; Lo, Wen-Cheng |
| 國立交通大學 |
2014-12-08T15:12:55Z |
Optimized ONO thickness for multi-level and 2-bit/cell operation for wrapped-select-gate (WSG) SONOS memory
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Wu, Woei-Cherng; Chao, Tien-Sheng; Peng, Wu-Chin; Yang, Wen-Luh; Chen, Jian-Hao; Ma, Ming Wen; Lai, Chao-Sung; Yang, Tsung-Yu; Lee, Chien-Hsing; Hsieh, Tsung-Min; Liou, Jhyy Cheng; Chen, Tzu Ping; Chen, Chien Hung; Lin, Chih Hung; Chen, Hwi Huang; Ko, Joe |
| 國立交通大學 |
2014-12-08T15:12:52Z |
Current transport mechanism for HfO2 gate dielectrics with fluorine incorporation
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Wu, Woei Cherng; Lai, Chao Sung; Wang, Tzu Ming; Wang, Jer Chyi; Hsu, Chih Wei; Ma, Ming Wen; Chao, Tien Sheng |
| 國立交通大學 |
2014-12-08T15:12:40Z |
Characteristics of PBTI and hot carrier stress for LTPS-TFT with high-kappa gate dielectric
|
Ma, Ming-Wen; Chen, Chih-Yang; Su, Chun-Jung; Wu, Woei-Cherng; Wu, Yi-Hong; Kao, Kuo-Hsing; Chao, Tien-Sheng; Lei, Tan-Fu |
| 國立交通大學 |
2014-12-08T15:12:39Z |
Analysis of negative bias temperature instability in body-tied low-temperature polycrystalline silicon thin-film transistors
|
Chen, Chih-Yang; Ma, Ming-Wen; Chen, Wei-Cheng; Lin, Hsiao-Yi; Yeh, Kuan-Lin; Wang, Shen-De; Lei, Tan-Fu |
| 國立交通大學 |
2014-12-08T15:12:39Z |
Impacts of fluorine ion implantation with low-temperature solid-phase crystallized activation on high-kappa LTPS-TFT
|
Ma, Ming-Wen; Chen, Chih-Yang; Su, Chun-Jung; Wu, Woei-Cherng; Wu, Yi-Hong; Yang, Tsung-Yu; Kao, Kuo-Hsing; Chao, Tien-Sheng; Lei, Tan-Fu |
| 國立交通大學 |
2014-12-08T15:12:13Z |
Reliability mechanisms of LTPS-TFT with HfO2 gate dielectric: PBTI, NBTI, and hot-carrier stress
|
Ma, Ming-Wen; Chen, Chih-Yang; Wu, Woei-Cherrig; Su, Chun-Jung; Kao, Kuo-Hsing; Chao, Tien-Sheng; Lei, Tan-Fu |
| 國立交通大學 |
2014-12-08T15:11:36Z |
Mobility improvement of HfO2 LTPS-TFTs with nitrogen implanataion
|
Ma, Ming-Wen; Yang, Tsung-Yu; Kao, Kuo-Hsing; Su, Chun-Jung; Chao, Tien-Sheng; Lei, Tan-Fu |
| 國立交通大學 |
2014-12-08T15:11:34Z |
Impacts of nitric acid oxidation on low-temperature polycrystalline silicon TFTs with high-k gate dielectric
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Yang, Tsung-Yu; Ma, Ming-Wen; Kao, Kuo-Hsing; Su, Chun-Jung; Chao, Tien-Sheng; Lei, Tan-Fu |
| 國立交通大學 |
2014-12-08T15:11:26Z |
High-performance metal-induced laterally crystallized polycrystalline silicon p-channel thin-film transistor with TaN/HfO2 gate stack structure
|
Ma, Ming-Wen; Chao, Tien-Sheng; Su, Chun-Jung; Wu, Woei-Cherng; Kao, Kuo-Hsing; Lei, Tan-Fu |
| 國立交通大學 |
2014-12-08T15:11:26Z |
Dynamic negative bias temperature instability in low-temperature poly-Si thin-film transistors
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Chen, Chih-Yang; Wang, Tong-Yi; Ma, Ming-Wen; Chen, Wei-Cheng; Lin, Hsiao-Yi; Yeh, Kuan-Lin; Wang, Shen-De; Lei, Tan-Fu |
| 國立交通大學 |
2014-12-08T15:11:13Z |
Carrier transportation mechanism of the TaN/HfO(2)/IL/Si structure with silicon surface fluorine implantation
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Wu, Woei Cherng; Lai, Chao-Sung; Wang, Tzu-Ming; Wang, Jer-Chyi; Hsu, Chih Wei; Ma, Ming Wen; Lo, Wen-Cheng; Chao, Tien Sheng |
| 國立交通大學 |
2014-12-08T15:10:56Z |
X-ray photoelectron spectroscopy energy band alignment of spin-on CoTiO(3) high-k dielectric prepared by sol-gel spin coating method
|
Kao, Kuo-Hsing; Chuang, Shiow-Huey; Wu, Woei-Cherng; Chao, Tien-Sheng; Chen, Jian-Hao; Ma, Ming-Wen; Gao, Reui-Hong; Chiang, Michael Y. |
| 國立交通大學 |
2014-12-08T15:10:43Z |
Impacts of N-2 and NH3 Plasma Surface Treatments on High-Performance LTPS-TFT With High-kappa Gate Dielectric
|
Ma, Ming-Wen; Chao, Tien-Sheng; Chiang, Tsung-Yu; Wu, Woei-Cherng; Lei, Tan-Fu |
| 國立交通大學 |
2014-12-08T15:10:35Z |
Positive Bias Temperature Instability (PBTI) Characteristics of Contact-Etch-Stop-Layer-Induced Local-Tensile-Strained HfO(2) nMOSFET
|
Wu, Woei-Cherng; Chao, Tien-Sheng; Chiu, Te-Hsin; Wang, Jer-Chyi; Lai, Chao-Sung; Ma, Ming-Wen; Lo, Wen-Cheng |
| 國立交通大學 |
2014-12-08T15:10:33Z |
Characteristics of HfO(2)/Poly-Si Interfacial Layer on CMOS LTPS-TFTs With HfO(2) Gate Dielectric and O(2) Plasma Surface Treatment
|
Ma, Ming-Wen; Chiang, Tsung-Yu; Wu, Woei-Cherng; Chao, Tien-Sheng; Lei, Tan-Fu |
| 國立交通大學 |
2014-12-08T15:10:28Z |
Electrical Characteristics of High Performance SPC and MILC p-Channel LTPS-TFT with High-kappa Gate Dielectric
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Ma, Ming-Wen; Chiang, Tsung-Yu; Yeh, Chi-Ruei; Chao, Tien-Sheng; Lei, Tan-Fu |
| 國立交通大學 |
2014-12-08T15:09:16Z |
High-performance p-channel LTPS-TFT using HfO(2) gate dielectric and nitrogen ion implantation
|
Ma, Ming-Wen; Chiang, Tsung-Yu; Chao, Tien-Sheng; Lei, Tan-Fu |
| 國立交通大學 |
2014-12-08T15:08:49Z |
MILC-TFT With High-kappa Dielectrics for One-Time-Programmable Memory Application
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Chiang, Tsung-Yu; Ma, Ming-Wen; Wu, Yi-Hong; Kuo, Po-Yi; Wang, Kuan-Ti; Liao, Chia-Chun; Yeh, Chi-Ruei; Chao, Tien-Sheng |
| 國立交通大學 |
2014-12-08T15:07:34Z |
Performance enhancement for strained HfO(2) nMOSFET with contact etch stop layer (CESL) under pulsed-IV measurement
|
Wu, Woei-Cherng; Chao, Tien-Sheng; Chiu, Te-Hsin; Wang, Jer-Chyi; Lai, Chao-Sung; Ma, Ming-Wen; Lo, Wen-Cheng; Ho, Yi-Hsun |
| 國立成功大學 |
2007-03 |
Impact of high-k offset spacer in 65-nm node SOI devices
|
Ma, Ming-Wen; Wu, Chien-Hung; Yang, Tsung-Yu; Kao, Kuo-Hsing; Wu, Woei-Cherng; Wang, Shui-Jinn; Chao, Tien-Sheng; Lei, Tan-Fu |
Showing items 11-33 of 33 (1 Page(s) Totally)
1
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