|
|
Taiwan Academic Institutional Repository >
Browse by Author
|
"ma ming wen"
Showing items 6-15 of 33 (4 Page(s) Totally)
1 2 3 4 > >>
View [10|25|50] records per page
| 國立交通大學 |
2014-12-08T15:16:43Z |
A highly reliable multi-level and 2-bit/cell operation of wrapped-select-gate (WSG) SONOS memory with optimized ONO thickness
|
Wu, Woei-Cherng; Chao, Tien-Sheng; Peng, Wu-Chin; Yang, Wen-Luh; Wang, Jer-Chyi; Chen, Jian-Hao; Ma, Ming-Wen; Lai, Chao-Sung; Yang, Tsung-Yu; Chen, Tzu-Ping; Chen, Chien-Hung; Lin, Chih-Hung; Chen, Hwi-Huang; Ko, Joe |
| 國立交通大學 |
2014-12-08T15:15:57Z |
Fringing electric field effect on 65-nm-node fully depleted silicon-on-insulator devices
|
Ma, Ming-Wen; Chao, Tien-Sheng; Kao, Kuo-Hsing; Huang, Jyun-Siang; Lei, Tan-Fu |
| 國立交通大學 |
2014-12-08T15:15:32Z |
High-kappa material sidewall with source/drain-to-gate non-overlapped structure for low standby power applications
|
Ma, Ming-Wen; Chao, Tien-Sheng; Kao, Kuo-Hsing; Huang, Jyun-Siang; Lei, Tan-Fu |
| 國立交通大學 |
2014-12-08T15:15:06Z |
Bias temperature instabilities for low-temperature polycrystalline silicon complementary thin-film transistors
|
Chen, Chih-Yang; Lee, Jam-Wem; Ma, Ming-Wen; Chen, Wei-Cheng; Lin, Hsiao-Yi; Yeh, Kuan-Lin; Wang, Shen-De; Lei, Tan-Fu |
| 國立交通大學 |
2014-12-08T15:15:05Z |
High-performance HfO2 gate dielectrics fluorinated by postdeposition CF4 plasma treatment
|
Wu, Woei Cherng; Lai, Chao Sung; Wang, Jer Chyi; Chen, Jian Hao; Ma, Ming Wen; Chao, Tien Sheng |
| 國立交通大學 |
2014-12-08T15:14:34Z |
Impact of high-k offset spacer in 65-nm node SOI devices
|
Ma, Ming-Wen; Wu, Chien-Hung; Yang, Tsung-Yu; Kao, Kuo-Hsing; Wu, Woei-Cherng; Wang, Shui-Jinn; Chao, Tien-Sheng; Lei, Tan-Fu |
| 國立交通大學 |
2014-12-08T15:14:11Z |
A reliability model for low-temperature polycrystalline silicon thin-film transistors
|
Chen, Chih-Yang; Lee, Jam-Wem; Lee, Po-Hao; Chen, Wei-Cheng; Lin, Hsiao-Yi; Yeh, Kuan-Lin; Ma, Ming-Wen; Wang, Shen-De; Lei, Tan-Fu |
| 國立交通大學 |
2014-12-08T15:12:56Z |
Performance and interface characterization for contact etch stop layer-strained nMOSFET with HfO2 gate dielectrics under pulsed-IV measurement
|
Wu, Woei-Cherng; Chao, Tien-Sheng; Chiu, Te-Hsin; Wang, Jer-Chyi; Lai, Chao-Sung; Ma, Ming-Wen; Lo, Wen-Cheng |
| 國立交通大學 |
2014-12-08T15:12:55Z |
Optimized ONO thickness for multi-level and 2-bit/cell operation for wrapped-select-gate (WSG) SONOS memory
|
Wu, Woei-Cherng; Chao, Tien-Sheng; Peng, Wu-Chin; Yang, Wen-Luh; Chen, Jian-Hao; Ma, Ming Wen; Lai, Chao-Sung; Yang, Tsung-Yu; Lee, Chien-Hsing; Hsieh, Tsung-Min; Liou, Jhyy Cheng; Chen, Tzu Ping; Chen, Chien Hung; Lin, Chih Hung; Chen, Hwi Huang; Ko, Joe |
| 國立交通大學 |
2014-12-08T15:12:52Z |
Current transport mechanism for HfO2 gate dielectrics with fluorine incorporation
|
Wu, Woei Cherng; Lai, Chao Sung; Wang, Tzu Ming; Wang, Jer Chyi; Hsu, Chih Wei; Ma, Ming Wen; Chao, Tien Sheng |
Showing items 6-15 of 33 (4 Page(s) Totally)
1 2 3 4 > >>
View [10|25|50] records per page
|
