|
English
|
正體中文
|
简体中文
|
0
|
|
???header.visitor??? :
51945625
???header.onlineuser??? :
1053
???header.sponsordeclaration???
|
|
|
|
???tair.name??? >
???browser.page.title.author???
|
"ma mw"???jsp.browse.items-by-author.description???
Showing items 1-2 of 2 (1 Page(s) Totally) 1 View [10|25|50] records per page
| 國立交通大學 |
2014-12-08T15:40:57Z |
Fully silicided NiSi gate on La2O3 MOSFETs
|
Lin, CY; Ma, MW; Chin, A; Yeo, YC; Zhu, CX; Li, MF; Kwong, DL |
| 國立交通大學 |
2014-12-08T15:25:47Z |
Modeling finger number dependence on RF noise to 10 GHz in 0.13 mu m node MOSFETs with 80nm gate length
|
King, MC; Lai, ZM; Huang, CH; Lee, CF; Ma, MW; Huang, CM; Chang, Y; Chin, A |
Showing items 1-2 of 2 (1 Page(s) Totally) 1 View [10|25|50] records per page
|