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"ma tp"
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| 臺大學術典藏 |
2018-09-10T06:28:20Z |
Ga 2 O 3 „Gd 2 O 3…/Si 3 N 4 dual-layer gate dielectric for InGaAs enhancement mode metal-oxide-semiconductor field-effect transistor with channel inversion
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Zheng, JF; Tsai, W; Lin, TD; Lee, YJ; Chen, CP; Hong, M; Kwo, J; Cui, S; Ma, TP; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T06:28:16Z |
Enhancement-Mode (with Channel Inversion) and Depletion-Mode MOSFETs with Ga2O3 (Gd2O3)/Si3N4 Dual-Layer Gate Dielectrics on In0. 2Ga0. 8As
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Zheng, JF; Tsai, W; Hong, M; Lin, TD; Chen, CP; Kwo, J; Wang, XW; Ma, TP; MINGHWEI HONG |
Showing items 1-2 of 2 (1 Page(s) Totally)
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