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"maa jer shen"的相關文件
顯示項目 41-51 / 51 (共3頁)
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| 國立交通大學 |
2014-12-12T01:46:03Z |
氮化鎵高電子遷移率電晶體之銅金屬化導線製程
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郭澤耀; Guo, Tza-Yao; 張翼; 馬哲申; Chang, Yi; Maa, Jer-shen |
| 國立交通大學 |
2014-12-12T01:46:02Z |
氮化鎵元件之歐姆與蕭基接觸的銅製程材料研究
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陳宥綱; Chen, Yu-Kong; 張翼; 馬哲申; Chang, Yi; Maa, Jer Shen |
| 國立交通大學 |
2014-12-08T15:45:15Z |
MOVPE high quality GaN film grown on Si (111) substrates using a multilayer AlN buffer
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Lin, Kung-Liang; Chang, Edward-Yi; Huang, Jui-Chien; Huang, Wei-Ching; Hsiao, Yu-Lin; Chiang, Chen-Hao; Li, Tingkai; Tweet, Doug; Maa, Jer-Shen; Hsu, Sheng-Teng |
| 國立交通大學 |
2014-12-08T15:36:05Z |
Material growth and device characterization of AlGaN/GaN single-heterostructure and AlGaN/GaN/AlGaN double-heterostructure field effect transistors on Si substrates
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Hsiao, Yu-Lin; Chang, Chia-Ao; Chang, Edward Yi; Maa, Jer-Shen; Chang, Chia-Ta; Wang, Yi-Jie; Weng, You-Chen |
| 國立交通大學 |
2014-12-08T15:33:00Z |
Low resistance copper-based ohmic contact for AlGaN/GaN high electron mobility transistors
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Wong, Yuen-Yee; Chen, Yu-Kong; Maa, Jer-Shen; Yu, Hung-Wei; Tu, Yung-Yi; Dee, Chang-Fu; Yap, Chi-Chin; Chang, Edward Yi |
| 國立交通大學 |
2014-12-08T15:29:44Z |
Dislocation reduction in GaN film using Ga-lean GaN buffer layer and migration enhanced epitaxy
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Wong, Yuen-Yee; Chang, Edward Yi; Wu, Yue-Han; Hudait, Mantu K.; Yang, Tsung-Hsi; Chang, Jet-Rung; Ku, Jui-Tai; Chou, Wu-Ching; Chen, Chiang-Yao; Maa, Jer-Shen; Lin, Yueh-Chin |
| 國立交通大學 |
2014-12-08T15:22:03Z |
Effect of Graded AlxGa1-xN Layers on the Properties of GaN Grown on Patterned Si Substrates
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Hsiao, Yu-Lin; Lu, Lung-Chi; Wu, Chia-Hsun; Chang, Edward Yi; Kuo, Chien-I; Maa, Jer-Shen; Lin, Kung-Liang; Luong, Tien-Tung; Huang, Wei-Ching; Chang, Chia-Hua; Dee, Chang Fu; Majlis, Burhanuddin Yeop |
| 國立交通大學 |
2014-12-08T15:13:06Z |
Growth of GaN film on 150 mm Si (111) using multilayer AlN/AlGaN buffer by metal-organic vapor phase epitaxy method
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Lin, Kung-Liang; Chang, Edward-Yi; Hsiao, Yu-Lin; Huang, Wei-Ching; Li, Tingkai; Tweet, Doug; Maa, Jer-Shen; Hsu, Sheng-Teng; Lee, Ching-Ting |
| 國立交通大學 |
2014-12-08T15:11:44Z |
High quality Ge thin film grown by ultrahigh vacuum chemical vapor deposition on GaAs substrate
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Tang, Shih-Hsuan; Chang, Edward Yi; Hudait, Mantu; Maa, Jer-Shen; Liu, Chee-Wee; Luo, Guang-Li; Trinh, Hai-Dang; Su, Yung-Hsuan |
| 國立交通大學 |
2014-12-08T15:01:22Z |
Effect of Graded AlxGa1-xN Interlayer Buffer on the Strain of GaN Grown on Si (111) Using MOCVD Method
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Lin, KungLiang; Chang, Edward-Yi; Li, Tingkai; Huang, Wei-Ching; Hsiao, Yu-Lin; Tweet, Douglas; Maa, Jer-shen; Hsu, Sheng-Teng |
| 國立成功大學 |
2007-11-26 |
Growth of GaN film on 150 mm Si (111) using multilayer AlN/AlGaN buffer by metal-organic vapor phase epitaxy method
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Lin, Kung-Liang; Chang, Edward-Yi; Hsiao, Yu-Lin; Huang, Wei-Ching; Li, Tingkai; Tweet, Doug; Maa, Jer-Shen; Hsu, Sheng-Teng; Lee, Ching-Ting |
顯示項目 41-51 / 51 (共3頁)
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