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"maikap s"的相關文件
顯示項目 6-15 / 37 (共4頁)
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| 臺大學術典藏 |
2018-09-10T06:31:20Z |
Hole mobility enhancement of Si0.2Ge0.8 quantum well channel on Si
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Peng, C.-Y.; Yuan, F.; Yu, C.-Y.; Kuo, P.-S.; Lee, M.H.; Maikap, S.; Hsu, C.-H.; Liu, C.W.; CHEE-WEE LIU |
| 臺大學術典藏 |
2018-09-10T05:58:49Z |
Hole confinement at Si/SiGe heterojunction of strained-Si N and PMOS devices
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Wei, J.-Y.; Maikap, S.; Lee, M.H.; Lee, C.C.; Liu, C.W.; CHEE-WEE LIU |
| 臺大學術典藏 |
2018-09-10T05:58:48Z |
The interface properties of SiO2/strained-si with carbon incorporation surface channel MOSFETs
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Lee, M.H.; Chang, S.T.; Maikap, S.; Yu, C.-Y.; Liu, C.W.; CHEE-WEE LIU |
| 臺大學術典藏 |
2018-09-10T05:23:46Z |
Abnormal hole mobility of biaxial strained Si
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Liao, M.H.; Chang, S.T.; Lee, M.H.; Maikap, S.; Liu, C.W.; CHEE-WEE LIU |
| 臺大學術典藏 |
2018-09-10T05:23:45Z |
Novel schottky barrier strained germanium PMOS
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Peng, C.-Y.; Yuan, F.; Lee, M.H.; Yu, C.-Y.; Maikap, S.; Liao, M.H.; Chang, S.T.; Liu, C.W.; CHEE-WEE LIU |
| 臺大學術典藏 |
2018-09-10T05:23:45Z |
Mobility-enhancement technologies
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Liu, C.W.; Maikap, S.; Yu, C.-Y.; Liu, Chee Wee |
| 臺大學術典藏 |
2018-09-10T05:21:15Z |
MBE-grown high $κ$ gate dielectrics of HfO 2 and (Hf-Al) O 2 for Si and III-V semiconductors nano-electronics
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Lee, WC; Lee, YJ; Wu, YD; Chang, P; Huang, YL; Hsu, YL; Mannaerts, JP; Lo, RL; Chen, FR; Maikap, S; others; Lee, WC; Lee, YJ; Wu, YD; Chang, P; Huang, YL; Hsu, YL; Mannaerts, JP; Lo, RL; Chen, FR; Maikap, S; others; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T05:21:10Z |
Department of Materials Science and Engineering, National Tsing Hua University, Hsin Chu, 300, Taiwan
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Lee, WC; Lee, YJ; Wu, YD; Chang, P; Huang, YL; Hsu, YL; Mannaerts, JP; Lo, RL; Chen, FR; Maikap, S; others; Lee, WC; Lee, YJ; Wu, YD; Chang, P; Huang, YL; Hsu, YL; Mannaerts, JP; Lo, RL; Chen, FR; Maikap, S; others; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T04:55:30Z |
BICMOS devices under mechanical strain
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Liu, C.W.;Maikap, S.;Liao, M.H.;Yuan, F.;Lee, M.H.; Liu, C.W.; Maikap, S.; Liao, M.H.; Yuan, F.; Lee, M.H.; CHEE-WEE LIU |
| 臺大學術典藏 |
2018-09-10T04:55:29Z |
Ge outdiffusion effect on flicker noise in strained-Si nMOSFETs
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Hua, W.-C.; Lee, M.H.; Chen, P.S.; Maikap, S.; Liu, C.W.; Chen, K.M.; CHEE-WEE LIU |
顯示項目 6-15 / 37 (共4頁)
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