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Showing items 1-19 of 19 (1 Page(s) Totally)
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| 元智大學 |
Jan-19 |
Crystal structure control of Au-free InAs and InAs/GaSb heterostucture nanowires grown on Si (111) by metal-organic chemical vapor deposition
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李清庭; Kakkerla, Ramesh Kumar; Anandan, Deepak; Singh, Sankalp Kumar; Yu, Hung Wei; Dee, Chang-Fu; Majlis, Burhanuddin Yeop; Chang, Edward Yi |
| 國立交通大學 |
2019-12-13T01:12:23Z |
High-frequency Sezawa guided mode of GaN/sapphire using high aspect ratio electrode
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Jaafar, Muhammad Musoddiq; Wee, M. F. Mohd Razip; Dee, Chang Fu; Faiz, Mohd Syafiq; Chang, Edward Yi; Majlis, Burhanuddin Yeop |
| 國立交通大學 |
2019-10-05T00:08:37Z |
Electrical bistabilities behaviour of all-solution-processed non-volatile memories based on graphene quantum dots embedded in graphene oxide layers
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Jaafar, Muhammad Musoddiq; Ooi, Poh Choon; Wee, M. F. Mohd. Razip; Haniff, Muhammad Aniq Shazni Mohammad; Mohamed, Mohd Ambri; Chang, Edward Yi; Majlis, Burhanuddin Yeop; Dee, Chang Fu |
| 國立交通大學 |
2019-04-03T06:44:27Z |
Effective Passivation With High-Density Positive Fixed Charges for GaN MIS-HEMTs
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Liu, Shih-Chien; Huang, Chung-Kai; Chang, Chia-Hua; Lin, Yueh-Chin; Chen, Bo-Yuan; Tsai, Szu-Ping; Majlis, Burhanuddin Yeop; Dee, Chang-Fu; Chang, Edward Yi |
| 國立交通大學 |
2019-04-02T06:00:46Z |
The growth of pine-leaf-like hierarchical SnO2 nanostructures
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Dee, Chang Fu; Tiong, Teck Yaw; Varghese, Binni; Sow, Chorng-Haur; Wong, Yuan-Yee; Ahmad, Ishaq; Husnain, G.; Yi-Chang, Edward; Hsiao, Yu-Lin; Yu, Hung-Wei; Nguyen, Hong-Quan; Salleh, Muhamad Mat; Majlis, Burhanuddin Yeop |
| 國立交通大學 |
2019-04-02T05:59:28Z |
Effect of surface passivation by a low pressure and temperature environment-grown thermal oxide layer for multi-crystalline silicon solar cells
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Liao, Shun Sing; Chuang, Chuan Lung; Lin, Yueh Chin; Dee, Chang Fu; Majlis, Burhanuddin Yeop; Chang, Edward Yi |
| 國立交通大學 |
2019-04-02T05:59:07Z |
Crystal structure control of Au-free InAs and InAs/GaSb heterostucture nanowires grown on Si (111) by metal-organic chemical vapor deposition
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Kakkerla, Ramesh Kumar; Anandan, Deepak; Singh, Sankalp Kumar; Yu, Hung Wei; Lee, Ching-Ting; Dee, Chang-Fu; Majlis, Burhanuddin Yeop; Chang, Edward Yi |
| 國立交通大學 |
2018-08-21T05:54:05Z |
A rapid responding ultraviolet sensor based on multi-parallel aligned ZnO nanowires field effect transistor
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Tiong, Teck-Yaw; Dee, Chang-Fu; Hamzah, Azrul Azlan; Goh, Boon Tong; Wong, Yuan-Yee; Ooi, Lia; Majlis, Burhanuddin Yeop; Salleh, Muhamad Mat; Ahmad, Ishaq |
| 國立交通大學 |
2018-08-21T05:53:44Z |
Tunable Spectrum Selectivity for Multiphoton Absorption with Enhanced Visible Light Trapping in ZnO Nanorods
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Tan, Kok Hong; Lim, Fang Sheng; Toh, Alfred Zhen Yang; Zheng, Xia-Xi; Dee, Chang Fu; Majlis, Burhanuddin Yeop; Chai, Siang-Piao; Chang, Wei Sea |
| 國立交通大學 |
2018-08-21T05:53:19Z |
Evaluation of AlGaN/GaN metal-oxide-semicondutor high-electron mobility transistors with plasma-enhanced atomic layer deposition HfO2/AlN date dielectric for RF power applications
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Chiu, Yu Sheng; Luc, Quang Ho; Lin, Yueh Chin; Huang, Jui Chien; Dee, Chang Fu; Majlis, Burhanuddin Yeop; Chang, Edward Yi |
| 國立交通大學 |
2018-08-21T05:53:14Z |
AlGaN/GaN MIS-HEMTs With High Quality ALD-Al2O3 Gate Dielectric Using Water and Remote Oxygen Plasma As Oxidants
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Wang, Huan-Chung; Hsieh, Ting-En; Lin, Yueh-Chin; Luc, Quang Ho; Liu, Shih-Chien; Wu, Chia-Hsun; Dee, Chang Fu; Majlis, Burhanuddin Yeop; Chang, Edward Yi |
| 國立交通大學 |
2017-04-21T06:55:56Z |
Au-Free GaN High-Electron-Mobility Transistor with Ti/Al/W Ohmic and WN (X) Schottky Metal Structures for High-Power Applications
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Hsieh, Ting-En; Lin, Yueh-Chin; Chu, Chung-Ming; Chuang, Yu-Lin; Huang, Yu-Xiang; Shi, Wang-Cheng; Dee, Chang-Fu; Majlis, Burhanuddin Yeop; Lee, Wei-I; Chang, Edward Yi |
| 國立交通大學 |
2017-04-21T06:55:48Z |
Effective surface treatment for GaN metal-insulator-semiconductor high-electron-mobility transistors using HF plus N-2 plasma prior to SiN passivation
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Liu, Shih-Chien; Trinh, Hai-Dang; Dai, Gu-Ming; Huang, Chung-Kai; Dee, Chang-Fu; Majlis, Burhanuddin Yeop; Biswas, Dhrubes; Chang, Edward Yi |
| 國立交通大學 |
2017-04-21T06:55:41Z |
Reliability study of high-k La2O3/HfO2 and HfO2/La2O3 stacking layers on n-In0.53Ga0.47As metal-oxide-semiconductor capacitor
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Chu, Chung-Ming; Lin, Yueh-Chin; Lee, Wei-I; Dee, Chang Fu; Wong, Yuen-Yee; Majlis, Burhanuddin Yeop; Salleh, Muhamad Mat; Yap, Seong Ling; Chang, Edward Yi |
| 國立交通大學 |
2016-03-28T00:04:26Z |
Effective surface treatment for GaN metal-insulator-semiconductor high-electron-mobility transistors using HF plus N-2 plasma prior to SiN passivation
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Liu, Shih-Chien; Trinh, Hai-Dang; Dai, Gu-Ming; Huang, Chung-Kai; Dee, Chang-Fu; Majlis, Burhanuddin Yeop; Biswas, Dhrubes; Chang, Edward Yi |
| 國立交通大學 |
2014-12-08T15:36:38Z |
The growth of pine-leaf-like hierarchical SnO2 nanostructures
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Dee, Chang Fu; Tiong, Teck Yaw; Varghese, Binni; Sow, Chorng-Haur; Wong, Yuan-Yee; Ahmad, Ishaq; Husnain, G.; Yi-Chang, Edward; Hsiao, Yu-Lin; Yu, Hung-Wei; Nguyen, Hong-Quan; Salleh, Muhamad Mat; Majlis, Burhanuddin Yeop |
| 國立交通大學 |
2014-12-08T15:29:33Z |
Characterization of AlInN Layer Grown on GaN/Sapphire Substrate by MOCVD
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Huang, Wei-Ching; Chang, Edward-Yi; Wong, Yuen-Yee; Lin, Kung-Liang; Hsiao, Yu-Lin; Dee, Chang Fu; Majlis, Burhanuddin Yeop |
| 國立交通大學 |
2014-12-08T15:24:24Z |
InGaP/GaAs Dual-Junction Solar Cell with AlGaAs/GaAs Tunnel Diode Grown on 10 degrees off Misoriented GaAs Substrate
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Yu, Hung Wei; Chung, Chen Chen; Wang, Chin Te; Hong Quan Nguyen; Binh Tinh Tran; Lin, Kung Liang; Dee, Chang Fu; Majlis, Burhanuddin Yeop; Chang, Edward Yi |
| 國立交通大學 |
2014-12-08T15:22:03Z |
Effect of Graded AlxGa1-xN Layers on the Properties of GaN Grown on Patterned Si Substrates
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Hsiao, Yu-Lin; Lu, Lung-Chi; Wu, Chia-Hsun; Chang, Edward Yi; Kuo, Chien-I; Maa, Jer-Shen; Lin, Kung-Liang; Luong, Tien-Tung; Huang, Wei-Ching; Chang, Chia-Hua; Dee, Chang Fu; Majlis, Burhanuddin Yeop |
Showing items 1-19 of 19 (1 Page(s) Totally)
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