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Showing items 11-19 of 19 (1 Page(s) Totally)
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| 國立交通大學 |
2018-08-21T05:53:14Z |
AlGaN/GaN MIS-HEMTs With High Quality ALD-Al2O3 Gate Dielectric Using Water and Remote Oxygen Plasma As Oxidants
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Wang, Huan-Chung; Hsieh, Ting-En; Lin, Yueh-Chin; Luc, Quang Ho; Liu, Shih-Chien; Wu, Chia-Hsun; Dee, Chang Fu; Majlis, Burhanuddin Yeop; Chang, Edward Yi |
| 國立交通大學 |
2017-04-21T06:55:56Z |
Au-Free GaN High-Electron-Mobility Transistor with Ti/Al/W Ohmic and WN (X) Schottky Metal Structures for High-Power Applications
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Hsieh, Ting-En; Lin, Yueh-Chin; Chu, Chung-Ming; Chuang, Yu-Lin; Huang, Yu-Xiang; Shi, Wang-Cheng; Dee, Chang-Fu; Majlis, Burhanuddin Yeop; Lee, Wei-I; Chang, Edward Yi |
| 國立交通大學 |
2017-04-21T06:55:48Z |
Effective surface treatment for GaN metal-insulator-semiconductor high-electron-mobility transistors using HF plus N-2 plasma prior to SiN passivation
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Liu, Shih-Chien; Trinh, Hai-Dang; Dai, Gu-Ming; Huang, Chung-Kai; Dee, Chang-Fu; Majlis, Burhanuddin Yeop; Biswas, Dhrubes; Chang, Edward Yi |
| 國立交通大學 |
2017-04-21T06:55:41Z |
Reliability study of high-k La2O3/HfO2 and HfO2/La2O3 stacking layers on n-In0.53Ga0.47As metal-oxide-semiconductor capacitor
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Chu, Chung-Ming; Lin, Yueh-Chin; Lee, Wei-I; Dee, Chang Fu; Wong, Yuen-Yee; Majlis, Burhanuddin Yeop; Salleh, Muhamad Mat; Yap, Seong Ling; Chang, Edward Yi |
| 國立交通大學 |
2016-03-28T00:04:26Z |
Effective surface treatment for GaN metal-insulator-semiconductor high-electron-mobility transistors using HF plus N-2 plasma prior to SiN passivation
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Liu, Shih-Chien; Trinh, Hai-Dang; Dai, Gu-Ming; Huang, Chung-Kai; Dee, Chang-Fu; Majlis, Burhanuddin Yeop; Biswas, Dhrubes; Chang, Edward Yi |
| 國立交通大學 |
2014-12-08T15:36:38Z |
The growth of pine-leaf-like hierarchical SnO2 nanostructures
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Dee, Chang Fu; Tiong, Teck Yaw; Varghese, Binni; Sow, Chorng-Haur; Wong, Yuan-Yee; Ahmad, Ishaq; Husnain, G.; Yi-Chang, Edward; Hsiao, Yu-Lin; Yu, Hung-Wei; Nguyen, Hong-Quan; Salleh, Muhamad Mat; Majlis, Burhanuddin Yeop |
| 國立交通大學 |
2014-12-08T15:29:33Z |
Characterization of AlInN Layer Grown on GaN/Sapphire Substrate by MOCVD
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Huang, Wei-Ching; Chang, Edward-Yi; Wong, Yuen-Yee; Lin, Kung-Liang; Hsiao, Yu-Lin; Dee, Chang Fu; Majlis, Burhanuddin Yeop |
| 國立交通大學 |
2014-12-08T15:24:24Z |
InGaP/GaAs Dual-Junction Solar Cell with AlGaAs/GaAs Tunnel Diode Grown on 10 degrees off Misoriented GaAs Substrate
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Yu, Hung Wei; Chung, Chen Chen; Wang, Chin Te; Hong Quan Nguyen; Binh Tinh Tran; Lin, Kung Liang; Dee, Chang Fu; Majlis, Burhanuddin Yeop; Chang, Edward Yi |
| 國立交通大學 |
2014-12-08T15:22:03Z |
Effect of Graded AlxGa1-xN Layers on the Properties of GaN Grown on Patterned Si Substrates
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Hsiao, Yu-Lin; Lu, Lung-Chi; Wu, Chia-Hsun; Chang, Edward Yi; Kuo, Chien-I; Maa, Jer-Shen; Lin, Kung-Liang; Luong, Tien-Tung; Huang, Wei-Ching; Chang, Chia-Hua; Dee, Chang Fu; Majlis, Burhanuddin Yeop |
Showing items 11-19 of 19 (1 Page(s) Totally)
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