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Showing items 116-140 of 268 (11 Page(s) Totally)
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Institution	Date	Title	Author
臺大學術典藏	2018-09-10T04:51:56Z	Zone lasers	Vakhshoori, D;Hong, M;Asom, M;Leibenguth, RE;Mannaerts, JP;Wynn, JD; Vakhshoori, D; Hong, M; Asom, M; Leibenguth, RE; Mannaerts, JP; Wynn, JD; MINGHWEI HONG
臺大學術典藏	2018-09-10T04:51:55Z	ETCH Rate and Thickness Measurements of Layered GaAs, AlAs and AlGaAs Structures Using a Laser Reflectance Technique	Grober, Louise H;Hong, M;Grober, RD;Mannaerts, JP;Freund, RS; Grober, Louise H; Hong, M; Grober, RD; Mannaerts, JP; Freund, RS; MINGHWEI HONG
臺大學術典藏	2018-09-10T04:51:55Z	ETCH Rate and Thickness Measurements of Layered GaAs, AlAs and AlGaAs Structures Using a Laser Reflectance Technique	Grober, Louise H;Hong, M;Grober, RD;Mannaerts, JP;Freund, RS; Grober, Louise H; Hong, M; Grober, RD; Mannaerts, JP; Freund, RS; MINGHWEI HONG
臺大學術典藏	2018-09-10T04:51:55Z	Low-Resistivity Non-Alloyed Ohmic Contacts to p-and n-Gaas Using In-Situ Integrated Process	Hong, M;Vakhshoori, D;Mannaerts, JP;Kwo, J; Hong, M; Vakhshoori, D; Mannaerts, JP; Kwo, J; MINGHWEI HONG
臺大學術典藏	2018-09-10T04:51:55Z	Low-Resistivity Non-Alloyed Ohmic Contacts to p-and n-Gaas Using In-Situ Integrated Process	Hong, M;Vakhshoori, D;Mannaerts, JP;Kwo, J; Hong, M; Vakhshoori, D; Mannaerts, JP; Kwo, J; MINGHWEI HONG
臺大學術典藏	2018-09-10T04:31:35Z	Advances in high $κ$ gate dielectrics for Si and III-V semiconductors	Kortan, AR; Mannaerts, JP; Yang, B; Ye, P; Gossmann, H; others; MINGHWEI HONG; Chabal, YJ; Kwo, J;Hong, M;Busch, B;Muller, DA;Chabal, YJ;Kortan, AR;Mannaerts, JP;Yang, B;Ye, P;Gossmann, H;others; Kwo, J; Hong, M; Busch, B; Muller, DA
臺大學術典藏	2018-09-10T04:31:35Z	Advances in high $κ$ gate dielectrics for Si and III-V semiconductors	Kortan, AR; Mannaerts, JP; Yang, B; Ye, P; Gossmann, H; others; MINGHWEI HONG; Chabal, YJ; Kwo, J;Hong, M;Busch, B;Muller, DA;Chabal, YJ;Kortan, AR;Mannaerts, JP;Yang, B;Ye, P;Gossmann, H;others; Kwo, J; Hong, M; Busch, B; Muller, DA
臺大學術典藏	2018-09-10T04:31:35Z	GaAs MOSFET with oxide gate dielectric grown by atomic layer deposition	Ye, PD;Wilk, GD;Kwo, J;Yang, BAYB;Gossmann, H-JL;Frei, MAFM;Chu, SNG;Mannaerts, JP;Sergent, MASM;Hong, MAHM;others; Ye, PD; Wilk, GD; Kwo, J; Yang, BAYB; Gossmann, H-JL; Frei, MAFM; Chu, SNG; Mannaerts, JP; Sergent, MASM; Hong, MAHM; others; MINGHWEI HONG
臺大學術典藏	2018-09-10T04:31:35Z	GaAs MOSFET with oxide gate dielectric grown by atomic layer deposition	Ye, PD;Wilk, GD;Kwo, J;Yang, BAYB;Gossmann, H-JL;Frei, MAFM;Chu, SNG;Mannaerts, JP;Sergent, MASM;Hong, MAHM;others; Ye, PD; Wilk, GD; Kwo, J; Yang, BAYB; Gossmann, H-JL; Frei, MAFM; Chu, SNG; Mannaerts, JP; Sergent, MASM; Hong, MAHM; others; MINGHWEI HONG
臺大學術典藏	2018-09-10T04:31:35Z	GaAs metal-oxide-semiconductor field-effect transistor with nanometer-thin dielectric grown by atomic layer deposition	MINGHWEI HONG; Mannaerts, JP; Hong, M; Ng, KK; others; Ye, PD;Wilk, GD;Yang, B;Kwo, J;Chu, SNG;Nakahara, S;Gossmann, HJL;Mannaerts, JP;Hong, M;Ng, KK;others; Ye, PD; Wilk, GD; Yang, B; Kwo, J; Chu, SNG; Nakahara, S; Gossmann, HJL
臺大學術典藏	2018-09-10T04:31:35Z	GaAs metal-oxide-semiconductor field-effect transistor with nanometer-thin dielectric grown by atomic layer deposition	MINGHWEI HONG; Mannaerts, JP; Hong, M; Ng, KK; others; Ye, PD;Wilk, GD;Yang, B;Kwo, J;Chu, SNG;Nakahara, S;Gossmann, HJL;Mannaerts, JP;Hong, M;Ng, KK;others; Ye, PD; Wilk, GD; Yang, B; Kwo, J; Chu, SNG; Nakahara, S; Gossmann, HJL
臺大學術典藏	2018-09-10T04:31:34Z	Rapid post-metallization annealing effects on high-k Y 2 O 3/Si capacitor	Lay, TS;Liao, YY;Liu, WD;Lai, YH;Hung, Wei-Hsiu;Kwo, J;Hong, M;Mannaerts, JP; Lay, TS; Liao, YY; Liu, WD; Lai, YH; Hung, Wei-Hsiu; Kwo, J; Hong, M; Mannaerts, JP; MINGHWEI HONG
臺大學術典藏	2018-09-10T04:31:34Z	Rapid post-metallization annealing effects on high-k Y 2 O 3/Si capacitor	Lay, TS;Liao, YY;Liu, WD;Lai, YH;Hung, Wei-Hsiu;Kwo, J;Hong, M;Mannaerts, JP; Lay, TS; Liao, YY; Liu, WD; Lai, YH; Hung, Wei-Hsiu; Kwo, J; Hong, M; Mannaerts, JP; MINGHWEI HONG
臺大學術典藏	2018-09-10T04:31:34Z	Impact of metal/oxide interface on DC and RF performance of depletion-mode GaAs MOSFET employing MBE grown Ga 2 O 3 (Gd 2 O 3) as gate dielectric	Yang, B;Ye, PD;Kwo, J;Frei, MR;Gossmann, H-JL;Mannaerts, JP;Sergent, M;Hong, M;Ng, K;Bude, J; Yang, B; Ye, PD; Kwo, J; Frei, MR; Gossmann, H-JL; Mannaerts, JP; Sergent, M; Hong, M; Ng, K; Bude, J; MINGHWEI HONG
臺大學術典藏	2018-09-10T04:31:34Z	Impact of metal/oxide interface on DC and RF performance of depletion-mode GaAs MOSFET employing MBE grown Ga 2 O 3 (Gd 2 O 3) as gate dielectric	Yang, B;Ye, PD;Kwo, J;Frei, MR;Gossmann, H-JL;Mannaerts, JP;Sergent, M;Hong, M;Ng, K;Bude, J; Yang, B; Ye, PD; Kwo, J; Frei, MR; Gossmann, H-JL; Mannaerts, JP; Sergent, M; Hong, M; Ng, K; Bude, J; MINGHWEI HONG
臺大學術典藏	2018-09-10T04:31:34Z	Magnetic properties of epitaxial single crystal ultrathin Fe3Si films on GaAs (001)	Liou, Sy\\_Hwang;Malhotra, SS;Shen, JX;Hong, M;Kwo, J;Chen, HS;Mannaerts, JP; Liou, Sy\\_Hwang; Malhotra, SS; Shen, JX; Hong, M; Kwo, J; Chen, HS; Mannaerts, JP; MINGHWEI HONG
臺大學術典藏	2018-09-10T04:31:34Z	Magnetic properties of epitaxial single crystal ultrathin Fe3Si films on GaAs (001)	Liou, Sy\\_Hwang;Malhotra, SS;Shen, JX;Hong, M;Kwo, J;Chen, HS;Mannaerts, JP; Liou, Sy\\_Hwang; Malhotra, SS; Shen, JX; Hong, M; Kwo, J; Chen, HS; Mannaerts, JP; MINGHWEI HONG
臺大學術典藏	2018-09-10T04:31:33Z	Optimization of AuGe-Ni-Au ohmic contacts for GaAs MOSFETs	Lin, Hung-Cheng;Senanayake, Sidat;Cheng, Keh-Yung;Hong, Minghwei;Kwo, J Raynien;Yang, Bin;Mannaerts, JP; Lin, Hung-Cheng; Senanayake, Sidat; Cheng, Keh-Yung; Hong, Minghwei; Kwo, J Raynien; Yang, Bin; Mannaerts, JP; MINGHWEI HONG
臺大學術典藏	2018-09-10T04:31:33Z	Optimization of AuGe-Ni-Au ohmic contacts for GaAs MOSFETs	Lin, Hung-Cheng;Senanayake, Sidat;Cheng, Keh-Yung;Hong, Minghwei;Kwo, J Raynien;Yang, Bin;Mannaerts, JP; Lin, Hung-Cheng; Senanayake, Sidat; Cheng, Keh-Yung; Hong, Minghwei; Kwo, J Raynien; Yang, Bin; Mannaerts, JP; MINGHWEI HONG
臺大學術典藏	2018-09-10T04:31:33Z	Relative intensity noise of vertical cavity surface emitting lasers	Lau, KY; Smith, JS; Hong, M; Mannaerts, JP; MINGHWEI HONG; Kuchta, Daniel M;Gamelin, J;Walker, JD;Lin, J;Lau, KY;Smith, JS;Hong, M;Mannaerts, JP; Kuchta, Daniel M; Gamelin, J; Walker, JD; Lin, J
臺大學術典藏	2018-09-10T04:31:33Z	Relative intensity noise of vertical cavity surface emitting lasers	Lau, KY; Smith, JS; Hong, M; Mannaerts, JP; MINGHWEI HONG; Kuchta, Daniel M;Gamelin, J;Walker, JD;Lin, J;Lau, KY;Smith, JS;Hong, M;Mannaerts, JP; Kuchta, Daniel M; Gamelin, J; Walker, JD; Lin, J
臺大學術典藏	2018-09-10T04:31:33Z	GaAs-based MOSFETs with Al/sub 2/O/sub 3/gate dielectrics grown by atomic layer deposition	Ye, PD;Wilk, GD;Yang, B;Kwo, J;Gossmann, H-JL;Frei, M;Chu, SNG;Nakahara, S;Mannaerts, JP;Sergent, M;others; Ye, PD; Wilk, GD; Yang, B; Kwo, J; Gossmann, H-JL; Frei, M; Chu, SNG; Nakahara, S; Mannaerts, JP; Sergent, M; others; MINGHWEI HONG
臺大學術典藏	2018-09-10T04:31:33Z	GaAs-based MOSFETs with Al/sub 2/O/sub 3/gate dielectrics grown by atomic layer deposition	Ye, PD;Wilk, GD;Yang, B;Kwo, J;Gossmann, H-JL;Frei, M;Chu, SNG;Nakahara, S;Mannaerts, JP;Sergent, M;others; Ye, PD; Wilk, GD; Yang, B; Kwo, J; Gossmann, H-JL; Frei, M; Chu, SNG; Nakahara, S; Mannaerts, JP; Sergent, M; others; MINGHWEI HONG
臺大學術典藏	2018-09-10T04:31:32Z	Hydrogen plasma processing of GaAs and AlGaAs	Choquette, Kent D;Freund, RS;Hong, M;Luftman, HS;Chu, SNG;Mannaerts, JP;Wetzel, RC; Choquette, Kent D; Freund, RS; Hong, M; Luftman, HS; Chu, SNG; Mannaerts, JP; Wetzel, RC; MINGHWEI HONG
臺大學術典藏	2018-09-10T04:31:32Z	Hydrogen plasma processing of GaAs and AlGaAs	Choquette, Kent D;Freund, RS;Hong, M;Luftman, HS;Chu, SNG;Mannaerts, JP;Wetzel, RC; Choquette, Kent D; Freund, RS; Hong, M; Luftman, HS; Chu, SNG; Mannaerts, JP; Wetzel, RC; MINGHWEI HONG

Showing items 116-140 of 268 (11 Page(s) Totally)
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