|
|
Taiwan Academic Institutional Repository >
Browse by Author
|
"mannaerts jp"
Showing items 206-215 of 268 (27 Page(s) Totally)
<< < 16 17 18 19 20 21 22 23 24 25 > >>
View [10|25|50] records per page
| 臺大學術典藏 |
2018-09-10T03:46:46Z |
New phase formation of Gd2O3 films on GaAs (100)
|
Kortan, AR;Hong, M;Kwo, J;Mannaerts, JP;Krajewski, JJ;Kopylov, N;Steiner, C;Bolliger, B;Erbudak, M; Kortan, AR; Hong, M; Kwo, J; Mannaerts, JP; Krajewski, JJ; Kopylov, N; Steiner, C; Bolliger, B; Erbudak, M; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T03:46:46Z |
New phase formation of Gd2O3 films on GaAs (100)
|
Kortan, AR;Hong, M;Kwo, J;Mannaerts, JP;Krajewski, JJ;Kopylov, N;Steiner, C;Bolliger, B;Erbudak, M; Kortan, AR; Hong, M; Kwo, J; Mannaerts, JP; Krajewski, JJ; Kopylov, N; Steiner, C; Bolliger, B; Erbudak, M; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T03:46:46Z |
Electron cyclotron resonance plasma preparation of GaAs substrates for molecular beam epitaxy
|
Choquette, Kent D; Hong, M; Freund, Robert S; Mannaerts, JP; Wetzel, Robert C; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T03:46:46Z |
A periodic index separate confinement heterostructure quantum well laser
|
Wu, MC; Chen, YK; Hong, M; Mannaerts, JP; Chin, MA; Sergent, AM; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T03:46:46Z |
CV and GV characterisation of Ga 2 O 3 (Gd 2 O 3)/GaN capacitor with low interface state density
|
Lay, TS;Liu, WD;Hong, M;Kwo, J;Mannaerts, JP; MINGHWEI HONG; Lay, TS; Liu, WD; Hong, M; Kwo, J; Mannaerts, JP |
| 臺大學術典藏 |
2018-09-10T03:46:46Z |
CV and GV characterisation of Ga 2 O 3 (Gd 2 O 3)/GaN capacitor with low interface state density
|
Lay, TS;Liu, WD;Hong, M;Kwo, J;Mannaerts, JP; MINGHWEI HONG; Lay, TS; Liu, WD; Hong, M; Kwo, J; Mannaerts, JP |
| 臺大學術典藏 |
2018-09-10T03:46:45Z |
Energy Offsets at Ga_2O_3 (Gd_2O_3)/GaAs and Ga_2O_3 (Gd_2O_3)/GaN interfaces
|
Lay, TS;Hong, M;Kwo, J;Mannaerts, JP;Hung, WH; Lay, TS; Hong, M; Kwo, J; Mannaerts, JP; Hung, WH; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T03:46:45Z |
Energy Offsets at Ga_2O_3 (Gd_2O_3)/GaAs and Ga_2O_3 (Gd_2O_3)/GaN interfaces
|
Lay, TS;Hong, M;Kwo, J;Mannaerts, JP;Hung, WH; Lay, TS; Hong, M; Kwo, J; Mannaerts, JP; Hung, WH; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T03:46:45Z |
Properties of High kappa Gate Dielectrics Gd_2O_3, Y_2O_3, and yttria stabilized ZrO2 for Si
|
Kwo, J;Hong, M;Kortan, AR;Queeney, KL;Chabal Opila Jr, YJ;Muller, DA;Chu, SNG;Sapjeta, BJ;Mannaerts, JP;Boone, T;others; Kwo, J; Hong, M; Kortan, AR; Queeney, KL; Chabal Opila Jr, YJ; Muller, DA; Chu, SNG; Sapjeta, BJ; Mannaerts, JP; Boone, T; others; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T03:46:45Z |
Properties of High kappa Gate Dielectrics Gd_2O_3, Y_2O_3, and yttria stabilized ZrO2 for Si
|
Kwo, J;Hong, M;Kortan, AR;Queeney, KL;Chabal Opila Jr, YJ;Muller, DA;Chu, SNG;Sapjeta, BJ;Mannaerts, JP;Boone, T;others; Kwo, J; Hong, M; Kortan, AR; Queeney, KL; Chabal Opila Jr, YJ; Muller, DA; Chu, SNG; Sapjeta, BJ; Mannaerts, JP; Boone, T; others; MINGHWEI HONG |
Showing items 206-215 of 268 (27 Page(s) Totally)
<< < 16 17 18 19 20 21 22 23 24 25 > >>
View [10|25|50] records per page
|
