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Taiwan Academic Institutional Repository >
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"mannaerts jp"
Showing items 221-245 of 268 (11 Page(s) Totally) << < 2 3 4 5 6 7 8 9 10 11 > >> View [10|25|50] records per page
| 臺大學術典藏 |
2018-09-10T03:46:44Z |
Structure of Gd_2O3 films on GaAs (100)
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Kortan, AR;Hong, M;Kwo, J;Mannaerts, JP;Krajewski, JJ;Kopylov, N;Steiner, C;Bolliger, B;Erbudak, M;others; Kortan, AR; Hong, M; Kwo, J; Mannaerts, JP; Krajewski, JJ; Kopylov, N; Steiner, C; Bolliger, B; Erbudak, M; others; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T03:46:44Z |
GaAs MOSFET-Materials Physics and Devices
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Hong, M;Kwo, J;Kortan, AR;Mannaerts, JP;Wang, YC;Lay, TS; Hong, M; Kwo, J; Kortan, AR; Mannaerts, JP; Wang, YC; Lay, TS; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T03:46:44Z |
GaAs MOSFET-Materials Physics and Devices
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Hong, M;Kwo, J;Kortan, AR;Mannaerts, JP;Wang, YC;Lay, TS; Hong, M; Kwo, J; Kortan, AR; Mannaerts, JP; Wang, YC; Lay, TS; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T03:46:44Z |
Transverse distributed Bragg reflector quantum-well lasers
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WU, MC; Chen, YK; Hong, M; Mannaerts, JP; Chin, MA; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T03:46:43Z |
Doping and free-carrier loss in cw all-epitaxial surface-emitting laser diodes
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Fischer, RJ; Wang, YH; Hong, M; Mannaerts, JP; Cho, AY; Gamelin, J; Wang, S; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T03:46:43Z |
Vertical cavity top-surface emitting lasers with thin Ag mirrors and hybrid reflectors
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Hong, M; Tu, LW; Gamelin, J; Wang, YH; Fischer, RJ; Schubert, EF; Tai, K; Hasnain, G; Mannaerts, JP; Weir, BE; others; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T03:46:43Z |
Short pulse generation by electrical gain switching of vertical cavity surface emitting laser
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Lin, James; Gamelin, JK; Wang, S; Hong, M; Mannaerts, JP; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T03:46:43Z |
A simple way to reduce series resistance in p-doped semiconductor distributed Bragg reflectors
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Hong, M; Mannaerts, JP; Hong, JM; Fischer, RJ; Tai, K; Kwo, J; V; enberg, JM; Wang, YH; Gamelin, J; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T03:46:42Z |
CV and GV characterisation of Ga^ sub 2^ O^ sub 3^(Gd^ sup 2^ O^ sub 3^)/GaN capacitor with low interface state density
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Lay, TS;Liu, WD;Hong, M;Kwo, J;Mannaerts, JP; Lay, TS; Liu, WD; Hong, M; Kwo, J; Mannaerts, JP; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T03:46:42Z |
CV and GV characterisation of Ga^ sub 2^ O^ sub 3^(Gd^ sup 2^ O^ sub 3^)/GaN capacitor with low interface state density
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Lay, TS;Liu, WD;Hong, M;Kwo, J;Mannaerts, JP; Lay, TS; Liu, WD; Hong, M; Kwo, J; Mannaerts, JP; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T03:28:36Z |
Initial growth of Gã 2Õ 3 (Gd̃ 2Õ 3) on GaAs: Key to the attainment of a low interfacial density of states
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Hong, M; Lu, ZH; Kwo, J; Kortan, AR; Mannaerts, JP; Krajewski, JJ; Hsieh, KC; Chou, LJ; Cheng, KY; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T03:28:36Z |
High E gate dielectrics Gd2O3 and Y2O3 for silicon
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Boone, T; Krajewski, JJ; Sergent, AM; Rosamilia, JM; MINGHWEI HONG; Mannaerts, JP; Kwo, J; Hong, M; Kortan, AR; Queeney, KT; Chabal, YJ |
| 臺大學術典藏 |
2018-09-10T03:28:35Z |
First demonstration of GaAs CMOS
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Hong, M; Baillargeon, JN; Kwo, J; Mannaerts, JP; Cho, AY; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T03:28:35Z |
Characteristics of Ga2O3 (Gd2O3)/GaAs interface: Structures and compositions
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Hong, M; Kortan, AR; Kwo, J; Mannaerts, JP; Krajewski, JJ; Lu, ZH; Hsieh, KC; Cheng, KY; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T03:28:35Z |
Properties of Ga2O3 (Gd2O3)/GaN metal-insulator-semiconductor diodes
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Hong, M; Anselm, KA; Kwo, J; Ng, HM; Baillargeon, JN; Kortan, AR; Mannaerts, JP; Cho, AY; Lee, CM; Chyi, JI; others; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T03:28:34Z |
Use of hybrid reflectors to achieve low thresholds in all molecular-beam epitaxy grown vertical cavity surface emitting laser diodes
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Fischer, RJ;Tai, K;Hong, M;V;enberg, JM;Ying, JY;Mannaerts, JP;Cho, AY; Fischer, RJ; Tai, K; Hong, M; V; enberg, JM; Ying, JY; Mannaerts, JP; Cho, AY; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T03:28:34Z |
Use of hybrid reflectors to achieve low thresholds in all molecular-beam epitaxy grown vertical cavity surface emitting laser diodes
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Fischer, RJ;Tai, K;Hong, M;V;enberg, JM;Ying, JY;Mannaerts, JP;Cho, AY; Fischer, RJ; Tai, K; Hong, M; V; enberg, JM; Ying, JY; Mannaerts, JP; Cho, AY; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T03:28:34Z |
A comparison of gallium gadolinium oxide and gadolinium oxide for use as dielectrics in GaN MOSFETs
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Gila, BP; Lee, KN; Johnson, W; Ren, F; Abernathy, CR; Pearton, SJ; Hong, M; Kwo, J; Mannaerts, JP; Anselm, KA; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T03:28:34Z |
Structural modifications of the Gd 2 O 3 (110) films on GaAs (100)
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Steiner, C; Bolliger, B; Erbudak, M; Hong, M; Kortan, AR; Kwo, J; Mannaerts, JP; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T03:28:34Z |
Structure of epitaxial Gd2O3 films and their registry on GaAs (100) substrates
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Bolliger, B; Erbudak, M; Hong, M; Kwo, J; Kortan, AR; Mannaerts, JP; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T03:28:33Z |
Papers from the 18th North American Conference on Molecular Beam Epitaxy-Nitrides by MBE-Properties of Ga2O3 (Gd2O3)/GaN metal-insulator-semiconductor diodes
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Hong, M; Anselm, KA; Kwo, J; Ng, HM; Baillargeon, JN; Kortan, AR; Mannaerts, JP; Cho, AY; Lee, CM; Chyi, JI; others; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T03:28:33Z |
Insulator/GaN Heterostructures of Low Interfacial Density of States
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Hong, M; Ng, HM; Kwo, J; Kortan, AR; Baillargeon, JN; Anselm, KA; Mannaerts, JP; Cho, AY; Lee, CM; Chyi, JI; others; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T03:28:33Z |
GaAs/AlGaAs multiple quantum well GRIN-SCH vertical cavity surface emitting laser diodes
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Wang, YH;Tai, K;Wynn, JD;Hong, M;Fischer, RJ;Mannaerts, JP;Cho, AY; Wang, YH; Tai, K; Wynn, JD; Hong, M; Fischer, RJ; Mannaerts, JP; Cho, AY; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T03:28:33Z |
GaAs/AlGaAs multiple quantum well GRIN-SCH vertical cavity surface emitting laser diodes
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Wang, YH;Tai, K;Wynn, JD;Hong, M;Fischer, RJ;Mannaerts, JP;Cho, AY; Wang, YH; Tai, K; Wynn, JD; Hong, M; Fischer, RJ; Mannaerts, JP; Cho, AY; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T03:28:33Z |
Papers from the 18th North American Conference on Molecular Beam Epitaxy-Novel Materials I-Characteristics of Ga2O3 (Gd2O3)/GaAs interface: Structures and compositions
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Hong, M; Kortan, AR; Kwo, J; Mannaerts, JP; Krajewski, JJ; Lu, ZH; Hsieh, KC; Cheng, KY; MINGHWEI HONG |
Showing items 221-245 of 268 (11 Page(s) Totally) << < 2 3 4 5 6 7 8 9 10 11 > >> View [10|25|50] records per page
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