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Taiwan Academic Institutional Repository >
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"mannaerts jp"
Showing items 31-80 of 268 (6 Page(s) Totally)
1 2 3 4 5 6 > >>
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| 臺大學術典藏 |
2018-09-10T06:28:20Z |
Synthetic magnetic rare-earth Dy-Y superlattices
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Kwo, J; Schneemeyer, LF; Waszczak, JV; Mannaerts, JP; Majkrzak, CF; Gibbs, Doon; Bohr, J; MINGHWEI HONG; Fleming, RM; Hong, M; Hong, M;Fleming, RM;Kwo, J;Schneemeyer, LF;Waszczak, JV;Mannaerts, JP;Majkrzak, CF;Gibbs, Doon;Bohr, J |
| 臺大學術典藏 |
2018-09-10T06:28:19Z |
III-V compound semiconductor MOSFETs using Ga/sub 2/O/sub 3/(Gd/sub 2/O/sub 3/) as gate dielectric
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Ren, F; Hong, M; Kuo, JM; Hobson, WS; Lothian, JR; Tsai, HS; Lin, J; Mannaerts, JP; Kwo, J; Chu, SNG; others; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T06:28:14Z |
DEMONSTRATION OF ENHANCEMENT-MODE p-CHANNEL GaAs MOSFETs WITH Ga 2 O 3 (Gd 2 O 3) PASSIVATION
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Ren, F; Hong, M; Hobson, WS; Kuo, JM; Lothian, JR; Mannaerts, JP; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T06:28:13Z |
Advancing metal-oxide-semiconductor theory: Steady-state nonequilibrium conditions
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Passlack, M; Hong, M; Schubert, EF; Zydzik, GJ; Mannaerts, JP; Hobson, WS; Harris, TD; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T06:28:13Z |
Novel Ga 2 O 3 (Ga 2 O 3) passivation techniques to produce low D it oxide-GaAs interfaces
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Hong, M; Mannaerts, JP; Bower, JE; Kwo, J; Passlack, M; Hwang, W-Y; Tu, LW; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T06:28:13Z |
Low D it, thermodynamically stable Ga 2 O 3-GaAs interfaces: fabrication, characterization, and modeling
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Passlack, M; Hong, M; Mannaerts, JP; Opila, RL; Chu, SNG; Moriya, N; Ren, F; Kwo, JR; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T06:28:13Z |
Ga2O3/GaAs depletion mode MOSFET
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Middleton, JR; Hsia, HK; Caruth, D; Moy, AM; Cheng, KY; Feng, M; Hong, M; Mannaerts, JP; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T06:28:13Z |
Characterization of the interfacial electronic properties of oxide films on GaAs fabricated by in-situ molecular beam epitaxy
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Hwang, Jenn-Shyong; Chou, WY; Chang, GS; Tyan, SL; Hong, M; Mannaerts, JP; Kwo, J; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T06:28:12Z |
A Ga 2 O 3 passivation technique compatible with GaAs device processing
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Hong, M; Passlack, M; Mannaerts, JP; Harris, TD; Schnoes, ML; Opila, RL; Krautter, HW; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T06:28:11Z |
Surface-micromachined tunable resonant cavity LED using wafer bonding
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Christenson, Gina L; Tran, Alex TD; Zhu, Zuhua; Lo, Yu-Hwa; Hong, Minghwei; Mannaerts, JP; Bhat, Rajaram J; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T05:56:16Z |
Enhancement-mode p-channel GaAs MOSFETs on semi-insulating substrates
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Ren, F;Hong, MW;Hobson, WS;Kuo, JM;Lothian, JR;Mannaerts, JP;Kwo, J;Chen, YK;Cho, A'Y; Ren, F; Hong, MW; Hobson, WS; Kuo, JM; Lothian, JR; Mannaerts, JP; Kwo, J; Chen, YK; Cho, A'Y; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T05:56:16Z |
Enhancement-mode p-channel GaAs MOSFETs on semi-insulating substrates
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Ren, F;Hong, MW;Hobson, WS;Kuo, JM;Lothian, JR;Mannaerts, JP;Kwo, J;Chen, YK;Cho, A'Y; Ren, F; Hong, MW; Hobson, WS; Kuo, JM; Lothian, JR; Mannaerts, JP; Kwo, J; Chen, YK; Cho, A'Y; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T05:56:15Z |
Strain relaxation in Fe3 (Al, Si)/GaAs: An x-ray scattering study
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Noh, DY; Hwu, Y; Je, JH; Hong, M; Mannaerts, JP; MINGHWEI HONG; Noh, DY;Hwu, Y;Je, JH;Hong, M;Mannaerts, JP |
| 臺大學術典藏 |
2018-09-10T05:56:15Z |
Strain relaxation in Fe3 (Al, Si)/GaAs: An x-ray scattering study
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Noh, DY; Hwu, Y; Je, JH; Hong, M; Mannaerts, JP; MINGHWEI HONG; Noh, DY;Hwu, Y;Je, JH;Hong, M;Mannaerts, JP |
| 臺大學術典藏 |
2018-09-10T05:56:14Z |
Tunable long wavelength LED using wafer bonding and micromachining technologies
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Christenson, GL;Tran, ATTD;Zhu, ZH;Lo, YH;Hong, M;Mannaerts, JP;Bhat, R; Christenson, GL; Tran, ATTD; Zhu, ZH; Lo, YH; Hong, M; Mannaerts, JP; Bhat, R; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T05:56:14Z |
Tunable long wavelength LED using wafer bonding and micromachining technologies
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Christenson, GL;Tran, ATTD;Zhu, ZH;Lo, YH;Hong, M;Mannaerts, JP;Bhat, R; Christenson, GL; Tran, ATTD; Zhu, ZH; Lo, YH; Hong, M; Mannaerts, JP; Bhat, R; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T05:56:14Z |
Reliability studies of wafer-bonded InGaAs PIN photodetectors on GaAs substrates
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Ejeckam, FE;Chua, CL;Zhu, Z-H;Lo, YH;Hong, Mingyi;Mannaerts, JP;Bhat, Ritesh; Ejeckam, FE; Chua, CL; Zhu, Z-H; Lo, YH; Hong, Mingyi; Mannaerts, JP; Bhat, Ritesh; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T05:56:14Z |
Reliability studies of wafer-bonded InGaAs PIN photodetectors on GaAs substrates
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Ejeckam, FE;Chua, CL;Zhu, Z-H;Lo, YH;Hong, Mingyi;Mannaerts, JP;Bhat, Ritesh; Ejeckam, FE; Chua, CL; Zhu, Z-H; Lo, YH; Hong, Mingyi; Mannaerts, JP; Bhat, Ritesh; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T05:56:14Z |
WDM transmitters using wavelength-tunable vertical-cavity lasers and resonant-cavity detectors
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Christenson, GL;Tran, ATTD;Chua, CL;Zhu, Z-H;Lo, Yen-Hua;Hong, Mingyi;Mannaerts, JP;Bhat, Ritesh; Christenson, GL; Tran, ATTD; Chua, CL; Zhu, Z-H; Lo, Yen-Hua; Hong, Mingyi; Mannaerts, JP; Bhat, Ritesh; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T05:56:14Z |
WDM transmitters using wavelength-tunable vertical-cavity lasers and resonant-cavity detectors
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Christenson, GL;Tran, ATTD;Chua, CL;Zhu, Z-H;Lo, Yen-Hua;Hong, Mingyi;Mannaerts, JP;Bhat, Ritesh; Christenson, GL; Tran, ATTD; Chua, CL; Zhu, Z-H; Lo, Yen-Hua; Hong, Mingyi; Mannaerts, JP; Bhat, Ritesh; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T05:56:14Z |
Structure of Sc 2 O 3 films epitaxially grown on $α$-Al 2 O 3 (0001)
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Kortan, AR; Kopylov, N; Kwo, J; Hong, M; Chen, CP; Mannaerts, JP; Liou, Sy\\_Hwang; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T05:56:12Z |
Recombination velocity at oxide-GaAs interfaces fabricated by in situ molecular beam epitaxy
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Passlack, M;Hong, M;Mannaerts, JP;Kwo, JR;Tu, LW; Passlack, M; Hong, M; Mannaerts, JP; Kwo, JR; Tu, LW; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T05:56:12Z |
Recombination velocity at oxide-GaAs interfaces fabricated by in situ molecular beam epitaxy
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Passlack, M;Hong, M;Mannaerts, JP;Kwo, JR;Tu, LW; Passlack, M; Hong, M; Mannaerts, JP; Kwo, JR; Tu, LW; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T05:56:12Z |
Low interface state density oxide-GaAs structures fabricated by insitu molecular beam epitaxy
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Hong, M; Passlack, M; Mannaerts, JP; Kwo, J; Chu, SNG; Moriya, N; Hou, SY; Fratello, VJ; MINGHWEI HONG; Hong, M;Passlack, M;Mannaerts, JP;Kwo, J;Chu, SNG;Moriya, N;Hou, SY;Fratello, VJ |
| 臺大學術典藏 |
2018-09-10T05:56:12Z |
Low interface state density oxide-GaAs structures fabricated by insitu molecular beam epitaxy
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Hong, M; Passlack, M; Mannaerts, JP; Kwo, J; Chu, SNG; Moriya, N; Hou, SY; Fratello, VJ; MINGHWEI HONG; Hong, M;Passlack, M;Mannaerts, JP;Kwo, J;Chu, SNG;Moriya, N;Hou, SY;Fratello, VJ |
| 臺大學術典藏 |
2018-09-10T05:56:12Z |
Quasistatic and high frequency capacitance-voltage characterization of Ga2O3-GaAs structures fabricated by insitu molecular beam epitaxy
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Passlack, M;Hong, M;Mannaerts, JP; Passlack, M; Hong, M; Mannaerts, JP; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T05:56:12Z |
Quasistatic and high frequency capacitance-voltage characterization of Ga2O3-GaAs structures fabricated by insitu molecular beam epitaxy
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Passlack, M;Hong, M;Mannaerts, JP; Passlack, M; Hong, M; Mannaerts, JP; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T05:56:11Z |
GaAs surface passivation using in-situ oxide deposition
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Passlack, M;Hong, M;Opila, RL;Mannaerts, JP;Kwo, JR; Passlack, M; Hong, M; Opila, RL; Mannaerts, JP; Kwo, JR; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T05:56:11Z |
GaAs surface passivation using in-situ oxide deposition
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Passlack, M;Hong, M;Opila, RL;Mannaerts, JP;Kwo, JR; Passlack, M; Hong, M; Opila, RL; Mannaerts, JP; Kwo, JR; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T05:56:11Z |
C-V and G-V characterization of in-situ fabricated Ga 2 O 3 GaAs interfaces for inversion/accumulation device and surface passivation applications
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Passlack, M;Hong, M;Mannaerts, JP; Passlack, M; Hong, M; Mannaerts, JP; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T05:56:11Z |
C-V and G-V characterization of in-situ fabricated Ga 2 O 3 GaAs interfaces for inversion/accumulation device and surface passivation applications
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Passlack, M;Hong, M;Mannaerts, JP; Passlack, M; Hong, M; Mannaerts, JP; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T05:56:10Z |
Observation of inversion layers at Ga 2 O 3-GaAs interfaces fabricated by in-situ molecular-beam epitaxy
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Passlack, M;Hong, M;Mannaerts, JP; Passlack, M; Hong, M; Mannaerts, JP; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T05:56:10Z |
Observation of inversion layers at Ga 2 O 3-GaAs interfaces fabricated by in-situ molecular-beam epitaxy
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Passlack, M;Hong, M;Mannaerts, JP; Passlack, M; Hong, M; Mannaerts, JP; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T05:21:16Z |
Coherent oscillations in semiconductor microcavities
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Wang, Hailin; Shah, Jagdeep; Damen, TC; Jan, WY; Cunningham, JE; Hong, M; Mannaerts, JP; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T05:21:15Z |
Depth-profile study of the electronic structures at Ga 2 O 3 (Gd 2 O 3) and Gd 2 O 3-GaN interfaces by X-ray photoelectron spectroscopy
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Lay, TS; Liao, YY; Hung, Wei-Hsiu; Hong, M; Kwo, J; Mannaerts, JP; Lay, TS; Liao, YY; Hung, Wei-Hsiu; Hong, M; Kwo, J; Mannaerts, JP; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T05:21:15Z |
Depth-profile study of the electronic structures at Ga 2 O 3 (Gd 2 O 3) and Gd 2 O 3-GaN interfaces by X-ray photoelectron spectroscopy
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Lay, TS; Liao, YY; Hung, Wei-Hsiu; Hong, M; Kwo, J; Mannaerts, JP; Lay, TS; Liao, YY; Hung, Wei-Hsiu; Hong, M; Kwo, J; Mannaerts, JP; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T05:21:15Z |
MBE-grown high $κ$ gate dielectrics of HfO 2 and (Hf-Al) O 2 for Si and III-V semiconductors nano-electronics
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Lee, WC; Lee, YJ; Wu, YD; Chang, P; Huang, YL; Hsu, YL; Mannaerts, JP; Lo, RL; Chen, FR; Maikap, S; others; Lee, WC; Lee, YJ; Wu, YD; Chang, P; Huang, YL; Hsu, YL; Mannaerts, JP; Lo, RL; Chen, FR; Maikap, S; others; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T05:21:15Z |
MBE-grown high $κ$ gate dielectrics of HfO 2 and (Hf-Al) O 2 for Si and III-V semiconductors nano-electronics
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Lee, WC; Lee, YJ; Wu, YD; Chang, P; Huang, YL; Hsu, YL; Mannaerts, JP; Lo, RL; Chen, FR; Maikap, S; others; Lee, WC; Lee, YJ; Wu, YD; Chang, P; Huang, YL; Hsu, YL; Mannaerts, JP; Lo, RL; Chen, FR; Maikap, S; others; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T05:21:15Z |
High-quality thin single-crystal $γ$-Al2O3 films grown on Si (111)
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Wu, SY; Hong, M; Kortan, AR; Kwo, J; Mannaerts, JP; Lee, WC; Huang, YL; Wu, SY; Hong, M; Kortan, AR; Kwo, J; Mannaerts, JP; Lee, WC; Huang, YL; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T05:21:15Z |
High-quality thin single-crystal $γ$-Al2O3 films grown on Si (111)
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Wu, SY; Hong, M; Kortan, AR; Kwo, J; Mannaerts, JP; Lee, WC; Huang, YL; Wu, SY; Hong, M; Kortan, AR; Kwo, J; Mannaerts, JP; Lee, WC; Huang, YL; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T05:21:15Z |
Thermodynamic stability of Ga2O3 (Gd2O3)/GaAs interface
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Huang, YL; Chang, P; Yang, ZK; Lee, YJ; Lee, HY; Liu, HJ; Kwo, J; Mannaerts, JP; Hong, M; Huang, YL; Chang, P; Yang, ZK; Lee, YJ; Lee, HY; Liu, HJ; Kwo, J; Mannaerts, JP; Hong, M; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T05:21:15Z |
Thermodynamic stability of Ga2O3 (Gd2O3)/GaAs interface
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Huang, YL; Chang, P; Yang, ZK; Lee, YJ; Lee, HY; Liu, HJ; Kwo, J; Mannaerts, JP; Hong, M; Huang, YL; Chang, P; Yang, ZK; Lee, YJ; Lee, HY; Liu, HJ; Kwo, J; Mannaerts, JP; Hong, M; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T05:21:14Z |
Thin single-crystal Sc 2 O 3 films epitaxially grown on Si (111)—structure and electrical properties
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Chen, CP; Hong, M; Kwo, J; Cheng, HM; Huang, YL; Lin, SY; Chi, J; Lee, HY; Hsieh, YF; Mannaerts, JP; Chen, CP; Hong, M; Kwo, J; Cheng, HM; Huang, YL; Lin, SY; Chi, J; Lee, HY; Hsieh, YF; Mannaerts, JP; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T05:21:14Z |
Thin single-crystal Sc 2 O 3 films epitaxially grown on Si (111)—structure and electrical properties
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Chen, CP; Hong, M; Kwo, J; Cheng, HM; Huang, YL; Lin, SY; Chi, J; Lee, HY; Hsieh, YF; Mannaerts, JP; Chen, CP; Hong, M; Kwo, J; Cheng, HM; Huang, YL; Lin, SY; Chi, J; Lee, HY; Hsieh, YF; Mannaerts, JP; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T05:21:13Z |
Demonstration of an isolated buried channel field-effect transistor fabricated via in situ patterned electron-beam deposition of Si in GaAs
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Mills Jr, AP; Hong, M; Mannaerts, JP; Pfeiffer, LN; West, KW; Martin, S; Ruel, RR; Baldwin, KW; Rowe, JE; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T05:21:12Z |
In situ fabricated Ga2O3-GaAs structures with low interface recombination velocity
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Kwo, JR; Mannaerts, JP; Chu, SNG; Moriya, N; Thiel, FA; MINGHWEI HONG; Schubert, EF; Passlack, M;Hong, M;Schubert, EF;Kwo, JR;Mannaerts, JP;Chu, SNG;Moriya, N;Thiel, FA; Passlack, M; Hong, M |
| 臺大學術典藏 |
2018-09-10T05:21:12Z |
In situ fabricated Ga2O3-GaAs structures with low interface recombination velocity
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Kwo, JR; Mannaerts, JP; Chu, SNG; Moriya, N; Thiel, FA; MINGHWEI HONG; Schubert, EF; Passlack, M;Hong, M;Schubert, EF;Kwo, JR;Mannaerts, JP;Chu, SNG;Moriya, N;Thiel, FA; Passlack, M; Hong, M |
| 臺大學術典藏 |
2018-09-10T05:21:12Z |
Ga2O3 films for electronic and optoelectronic applications
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Passlack, M; Schubert, EF; Hobson, WS; Hong, M; Moriya, N; Chu, SNG; Konstadinidis, K; Mannaerts, JP; Schnoes, ML; Zydzik, GJ; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T05:21:11Z |
RECORD LOW-RESISTANCE VERTICAL-CAVITY SURFACE-EMITTING LASERS GROWN BY MOLECULAR-BEAM EPITAXY USING HYBRID MIRROR APPROACH
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Hong, M;Vakhshoori, D;Mannaerts, JP;Thiel, FA; Hong, M; Vakhshoori, D; Mannaerts, JP; Thiel, FA; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T05:21:11Z |
RECORD LOW-RESISTANCE VERTICAL-CAVITY SURFACE-EMITTING LASERS GROWN BY MOLECULAR-BEAM EPITAXY USING HYBRID MIRROR APPROACH
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Hong, M;Vakhshoori, D;Mannaerts, JP;Thiel, FA; Hong, M; Vakhshoori, D; Mannaerts, JP; Thiel, FA; MINGHWEI HONG |
Showing items 31-80 of 268 (6 Page(s) Totally)
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