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"mannaerts jp"的相关文件
显示项目 101-150 / 268 (共6页)
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| 臺大學術典藏 |
2018-09-10T04:51:57Z |
In situ nonalloyed ohmic contacts to p-GaAs
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Hong, M;Vakhshoori, D;Mannaerts, JP;Thiel, FA;Wynn, JD; Hong, M; Vakhshoori, D; Mannaerts, JP; Thiel, FA; Wynn, JD; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T04:51:57Z |
In situ nonalloyed ohmic contacts to p-GaAs
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Hong, M;Vakhshoori, D;Mannaerts, JP;Thiel, FA;Wynn, JD; Hong, M; Vakhshoori, D; Mannaerts, JP; Thiel, FA; Wynn, JD; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T04:51:57Z |
Buried heterostructure laser diodes fabricated using in situ processing
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Hong, M;Vakhshoori, D;Grober, LH;Mannaerts, JP;Asom, MT;Wynn, JD;Thiel, FA;Freund, RS; Hong, M; Vakhshoori, D; Grober, LH; Mannaerts, JP; Asom, MT; Wynn, JD; Thiel, FA; Freund, RS; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T04:51:57Z |
Buried heterostructure laser diodes fabricated using in situ processing
|
Hong, M;Vakhshoori, D;Grober, LH;Mannaerts, JP;Asom, MT;Wynn, JD;Thiel, FA;Freund, RS; Hong, M; Vakhshoori, D; Grober, LH; Mannaerts, JP; Asom, MT; Wynn, JD; Thiel, FA; Freund, RS; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T04:51:57Z |
In-situ process for AlGaAs compound semiconductor: Materials science and device fabrication
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Hong, M;Choquette, KD;Mannaerts, JP;Grober, LH;Freund, RS;Vakhshoori, D;Chu, SNG;Luftman, HS;Wetzel, RC; Hong, M; Choquette, KD; Mannaerts, JP; Grober, LH; Freund, RS; Vakhshoori, D; Chu, SNG; Luftman, HS; Wetzel, RC; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T04:51:57Z |
In-situ process for AlGaAs compound semiconductor: Materials science and device fabrication
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Hong, M;Choquette, KD;Mannaerts, JP;Grober, LH;Freund, RS;Vakhshoori, D;Chu, SNG;Luftman, HS;Wetzel, RC; Hong, M; Choquette, KD; Mannaerts, JP; Grober, LH; Freund, RS; Vakhshoori, D; Chu, SNG; Luftman, HS; Wetzel, RC; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T04:51:57Z |
Interfacial characteristics of AlGaAs after insitu electron cyclotron resonance plasma etching and molecular beam epitaxial regrowth
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Hong, M;Mannaerts, JP;Grober, L;Chu, SNG;Luftman, HS;Choquette, KD;Freund, RS; Hong, M; Mannaerts, JP; Grober, L; Chu, SNG; Luftman, HS; Choquette, KD; Freund, RS; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T04:51:57Z |
Interfacial characteristics of AlGaAs after insitu electron cyclotron resonance plasma etching and molecular beam epitaxial regrowth
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Hong, M;Mannaerts, JP;Grober, L;Chu, SNG;Luftman, HS;Choquette, KD;Freund, RS; Hong, M; Mannaerts, JP; Grober, L; Chu, SNG; Luftman, HS; Choquette, KD; Freund, RS; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T04:51:56Z |
AlGaAs Surface Reconstruction after Cl 2 Chemical Etch and Ultra High Vacuum Anneal
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Hong, M;Mannaerts, JP;Grober, LH;Thiel, FA;Freund, RS; Hong, M; Mannaerts, JP; Grober, LH; Thiel, FA; Freund, RS; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T04:51:56Z |
AlGaAs Surface Reconstruction after Cl 2 Chemical Etch and Ultra High Vacuum Anneal
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Hong, M;Mannaerts, JP;Grober, LH;Thiel, FA;Freund, RS; Hong, M; Mannaerts, JP; Grober, LH; Thiel, FA; Freund, RS; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T04:51:56Z |
40-mW focused light spot from zone laser and parameters affecting its performance
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Vakhshoori, D;Asom, M;Hong, M;Leibenguth, RE;Wynn, JD;Mannaerts, JP;Kojima, K; Vakhshoori, D; Asom, M; Hong, M; Leibenguth, RE; Wynn, JD; Mannaerts, JP; Kojima, K; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T04:51:56Z |
40-mW focused light spot from zone laser and parameters affecting its performance
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Vakhshoori, D;Asom, M;Hong, M;Leibenguth, RE;Wynn, JD;Mannaerts, JP;Kojima, K; Vakhshoori, D; Asom, M; Hong, M; Leibenguth, RE; Wynn, JD; Mannaerts, JP; Kojima, K; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T04:51:56Z |
Interface analysis of dry etched and molecular beam epitaxial regrown AlGaAs
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Grober, LH; Hong, M; Mannaerts, JP; Freund, RS; Luftman, HS; Chu, SNG; MINGHWEI HONG; Grober, LH;Hong, M;Mannaerts, JP;Freund, RS;Luftman, HS;Chu, SNG |
| 臺大學術典藏 |
2018-09-10T04:51:56Z |
Interface analysis of dry etched and molecular beam epitaxial regrown AlGaAs
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Grober, LH; Hong, M; Mannaerts, JP; Freund, RS; Luftman, HS; Chu, SNG; MINGHWEI HONG; Grober, LH;Hong, M;Mannaerts, JP;Freund, RS;Luftman, HS;Chu, SNG |
| 臺大學術典藏 |
2018-09-10T04:51:56Z |
Zone lasers
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Vakhshoori, D;Hong, M;Asom, M;Leibenguth, RE;Mannaerts, JP;Wynn, JD; Vakhshoori, D; Hong, M; Asom, M; Leibenguth, RE; Mannaerts, JP; Wynn, JD; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T04:51:56Z |
Zone lasers
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Vakhshoori, D;Hong, M;Asom, M;Leibenguth, RE;Mannaerts, JP;Wynn, JD; Vakhshoori, D; Hong, M; Asom, M; Leibenguth, RE; Mannaerts, JP; Wynn, JD; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T04:51:55Z |
ETCH Rate and Thickness Measurements of Layered GaAs, AlAs and AlGaAs Structures Using a Laser Reflectance Technique
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Grober, Louise H;Hong, M;Grober, RD;Mannaerts, JP;Freund, RS; Grober, Louise H; Hong, M; Grober, RD; Mannaerts, JP; Freund, RS; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T04:51:55Z |
ETCH Rate and Thickness Measurements of Layered GaAs, AlAs and AlGaAs Structures Using a Laser Reflectance Technique
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Grober, Louise H;Hong, M;Grober, RD;Mannaerts, JP;Freund, RS; Grober, Louise H; Hong, M; Grober, RD; Mannaerts, JP; Freund, RS; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T04:51:55Z |
Low-Resistivity Non-Alloyed Ohmic Contacts to p-and n-Gaas Using In-Situ Integrated Process
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Hong, M;Vakhshoori, D;Mannaerts, JP;Kwo, J; Hong, M; Vakhshoori, D; Mannaerts, JP; Kwo, J; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T04:51:55Z |
Low-Resistivity Non-Alloyed Ohmic Contacts to p-and n-Gaas Using In-Situ Integrated Process
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Hong, M;Vakhshoori, D;Mannaerts, JP;Kwo, J; Hong, M; Vakhshoori, D; Mannaerts, JP; Kwo, J; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T04:31:35Z |
Advances in high $κ$ gate dielectrics for Si and III-V semiconductors
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Kortan, AR; Mannaerts, JP; Yang, B; Ye, P; Gossmann, H; others; MINGHWEI HONG; Chabal, YJ; Kwo, J;Hong, M;Busch, B;Muller, DA;Chabal, YJ;Kortan, AR;Mannaerts, JP;Yang, B;Ye, P;Gossmann, H;others; Kwo, J; Hong, M; Busch, B; Muller, DA |
| 臺大學術典藏 |
2018-09-10T04:31:35Z |
Advances in high $κ$ gate dielectrics for Si and III-V semiconductors
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Kortan, AR; Mannaerts, JP; Yang, B; Ye, P; Gossmann, H; others; MINGHWEI HONG; Chabal, YJ; Kwo, J;Hong, M;Busch, B;Muller, DA;Chabal, YJ;Kortan, AR;Mannaerts, JP;Yang, B;Ye, P;Gossmann, H;others; Kwo, J; Hong, M; Busch, B; Muller, DA |
| 臺大學術典藏 |
2018-09-10T04:31:35Z |
GaAs MOSFET with oxide gate dielectric grown by atomic layer deposition
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Ye, PD;Wilk, GD;Kwo, J;Yang, BAYB;Gossmann, H-JL;Frei, MAFM;Chu, SNG;Mannaerts, JP;Sergent, MASM;Hong, MAHM;others; Ye, PD; Wilk, GD; Kwo, J; Yang, BAYB; Gossmann, H-JL; Frei, MAFM; Chu, SNG; Mannaerts, JP; Sergent, MASM; Hong, MAHM; others; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T04:31:35Z |
GaAs MOSFET with oxide gate dielectric grown by atomic layer deposition
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Ye, PD;Wilk, GD;Kwo, J;Yang, BAYB;Gossmann, H-JL;Frei, MAFM;Chu, SNG;Mannaerts, JP;Sergent, MASM;Hong, MAHM;others; Ye, PD; Wilk, GD; Kwo, J; Yang, BAYB; Gossmann, H-JL; Frei, MAFM; Chu, SNG; Mannaerts, JP; Sergent, MASM; Hong, MAHM; others; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T04:31:35Z |
GaAs metal-oxide-semiconductor field-effect transistor with nanometer-thin dielectric grown by atomic layer deposition
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MINGHWEI HONG; Mannaerts, JP; Hong, M; Ng, KK; others; Ye, PD;Wilk, GD;Yang, B;Kwo, J;Chu, SNG;Nakahara, S;Gossmann, HJL;Mannaerts, JP;Hong, M;Ng, KK;others; Ye, PD; Wilk, GD; Yang, B; Kwo, J; Chu, SNG; Nakahara, S; Gossmann, HJL |
| 臺大學術典藏 |
2018-09-10T04:31:35Z |
GaAs metal-oxide-semiconductor field-effect transistor with nanometer-thin dielectric grown by atomic layer deposition
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MINGHWEI HONG; Mannaerts, JP; Hong, M; Ng, KK; others; Ye, PD;Wilk, GD;Yang, B;Kwo, J;Chu, SNG;Nakahara, S;Gossmann, HJL;Mannaerts, JP;Hong, M;Ng, KK;others; Ye, PD; Wilk, GD; Yang, B; Kwo, J; Chu, SNG; Nakahara, S; Gossmann, HJL |
| 臺大學術典藏 |
2018-09-10T04:31:34Z |
Rapid post-metallization annealing effects on high-k Y 2 O 3/Si capacitor
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Lay, TS;Liao, YY;Liu, WD;Lai, YH;Hung, Wei-Hsiu;Kwo, J;Hong, M;Mannaerts, JP; Lay, TS; Liao, YY; Liu, WD; Lai, YH; Hung, Wei-Hsiu; Kwo, J; Hong, M; Mannaerts, JP; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T04:31:34Z |
Rapid post-metallization annealing effects on high-k Y 2 O 3/Si capacitor
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Lay, TS;Liao, YY;Liu, WD;Lai, YH;Hung, Wei-Hsiu;Kwo, J;Hong, M;Mannaerts, JP; Lay, TS; Liao, YY; Liu, WD; Lai, YH; Hung, Wei-Hsiu; Kwo, J; Hong, M; Mannaerts, JP; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T04:31:34Z |
Impact of metal/oxide interface on DC and RF performance of depletion-mode GaAs MOSFET employing MBE grown Ga 2 O 3 (Gd 2 O 3) as gate dielectric
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Yang, B;Ye, PD;Kwo, J;Frei, MR;Gossmann, H-JL;Mannaerts, JP;Sergent, M;Hong, M;Ng, K;Bude, J; Yang, B; Ye, PD; Kwo, J; Frei, MR; Gossmann, H-JL; Mannaerts, JP; Sergent, M; Hong, M; Ng, K; Bude, J; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T04:31:34Z |
Impact of metal/oxide interface on DC and RF performance of depletion-mode GaAs MOSFET employing MBE grown Ga 2 O 3 (Gd 2 O 3) as gate dielectric
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Yang, B;Ye, PD;Kwo, J;Frei, MR;Gossmann, H-JL;Mannaerts, JP;Sergent, M;Hong, M;Ng, K;Bude, J; Yang, B; Ye, PD; Kwo, J; Frei, MR; Gossmann, H-JL; Mannaerts, JP; Sergent, M; Hong, M; Ng, K; Bude, J; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T04:31:34Z |
Magnetic properties of epitaxial single crystal ultrathin Fe3Si films on GaAs (001)
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Liou, Sy\\_Hwang;Malhotra, SS;Shen, JX;Hong, M;Kwo, J;Chen, HS;Mannaerts, JP; Liou, Sy\\_Hwang; Malhotra, SS; Shen, JX; Hong, M; Kwo, J; Chen, HS; Mannaerts, JP; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T04:31:34Z |
Magnetic properties of epitaxial single crystal ultrathin Fe3Si films on GaAs (001)
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Liou, Sy\\_Hwang;Malhotra, SS;Shen, JX;Hong, M;Kwo, J;Chen, HS;Mannaerts, JP; Liou, Sy\\_Hwang; Malhotra, SS; Shen, JX; Hong, M; Kwo, J; Chen, HS; Mannaerts, JP; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T04:31:33Z |
Optimization of AuGe-Ni-Au ohmic contacts for GaAs MOSFETs
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Lin, Hung-Cheng;Senanayake, Sidat;Cheng, Keh-Yung;Hong, Minghwei;Kwo, J Raynien;Yang, Bin;Mannaerts, JP; Lin, Hung-Cheng; Senanayake, Sidat; Cheng, Keh-Yung; Hong, Minghwei; Kwo, J Raynien; Yang, Bin; Mannaerts, JP; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T04:31:33Z |
Optimization of AuGe-Ni-Au ohmic contacts for GaAs MOSFETs
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Lin, Hung-Cheng;Senanayake, Sidat;Cheng, Keh-Yung;Hong, Minghwei;Kwo, J Raynien;Yang, Bin;Mannaerts, JP; Lin, Hung-Cheng; Senanayake, Sidat; Cheng, Keh-Yung; Hong, Minghwei; Kwo, J Raynien; Yang, Bin; Mannaerts, JP; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T04:31:33Z |
Relative intensity noise of vertical cavity surface emitting lasers
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Lau, KY; Smith, JS; Hong, M; Mannaerts, JP; MINGHWEI HONG; Kuchta, Daniel M;Gamelin, J;Walker, JD;Lin, J;Lau, KY;Smith, JS;Hong, M;Mannaerts, JP; Kuchta, Daniel M; Gamelin, J; Walker, JD; Lin, J |
| 臺大學術典藏 |
2018-09-10T04:31:33Z |
Relative intensity noise of vertical cavity surface emitting lasers
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Lau, KY; Smith, JS; Hong, M; Mannaerts, JP; MINGHWEI HONG; Kuchta, Daniel M;Gamelin, J;Walker, JD;Lin, J;Lau, KY;Smith, JS;Hong, M;Mannaerts, JP; Kuchta, Daniel M; Gamelin, J; Walker, JD; Lin, J |
| 臺大學術典藏 |
2018-09-10T04:31:33Z |
GaAs-based MOSFETs with Al/sub 2/O/sub 3/gate dielectrics grown by atomic layer deposition
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Ye, PD;Wilk, GD;Yang, B;Kwo, J;Gossmann, H-JL;Frei, M;Chu, SNG;Nakahara, S;Mannaerts, JP;Sergent, M;others; Ye, PD; Wilk, GD; Yang, B; Kwo, J; Gossmann, H-JL; Frei, M; Chu, SNG; Nakahara, S; Mannaerts, JP; Sergent, M; others; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T04:31:33Z |
GaAs-based MOSFETs with Al/sub 2/O/sub 3/gate dielectrics grown by atomic layer deposition
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Ye, PD;Wilk, GD;Yang, B;Kwo, J;Gossmann, H-JL;Frei, M;Chu, SNG;Nakahara, S;Mannaerts, JP;Sergent, M;others; Ye, PD; Wilk, GD; Yang, B; Kwo, J; Gossmann, H-JL; Frei, M; Chu, SNG; Nakahara, S; Mannaerts, JP; Sergent, M; others; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T04:31:32Z |
Hydrogen plasma processing of GaAs and AlGaAs
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Choquette, Kent D;Freund, RS;Hong, M;Luftman, HS;Chu, SNG;Mannaerts, JP;Wetzel, RC; Choquette, Kent D; Freund, RS; Hong, M; Luftman, HS; Chu, SNG; Mannaerts, JP; Wetzel, RC; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T04:31:32Z |
Hydrogen plasma processing of GaAs and AlGaAs
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Choquette, Kent D;Freund, RS;Hong, M;Luftman, HS;Chu, SNG;Mannaerts, JP;Wetzel, RC; Choquette, Kent D; Freund, RS; Hong, M; Luftman, HS; Chu, SNG; Mannaerts, JP; Wetzel, RC; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T04:31:32Z |
Removal of GaAs surface contaminants using H2 electron cyclotron resonance plasma treatment followed by Cl2 chemical etching
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Hong, M;Freund, RS;Choquette, KD;Luftman, HS;Mannaerts, JP;Wetzel, RC; Hong, M; Freund, RS; Choquette, KD; Luftman, HS; Mannaerts, JP; Wetzel, RC; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T04:31:32Z |
Removal of GaAs surface contaminants using H2 electron cyclotron resonance plasma treatment followed by Cl2 chemical etching
|
Hong, M;Freund, RS;Choquette, KD;Luftman, HS;Mannaerts, JP;Wetzel, RC; Hong, M; Freund, RS; Choquette, KD; Luftman, HS; Mannaerts, JP; Wetzel, RC; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T04:31:32Z |
GaAs surface reconstruction obtained using a dry process
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Choquette, Kent D;Hong, M;Luftman, HS;Chu, SNG;Mannaerts, JP;Wetzel, RC;Freund, RS; Choquette, Kent D; Hong, M; Luftman, HS; Chu, SNG; Mannaerts, JP; Wetzel, RC; Freund, RS; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T04:31:32Z |
GaAs surface reconstruction obtained using a dry process
|
Choquette, Kent D;Hong, M;Luftman, HS;Chu, SNG;Mannaerts, JP;Wetzel, RC;Freund, RS; Choquette, Kent D; Hong, M; Luftman, HS; Chu, SNG; Mannaerts, JP; Wetzel, RC; Freund, RS; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T04:31:32Z |
Hydrogen plasma removal of AlGaAs oxides before molecular beam epitaxy
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Choquette, Kent D;Hong, M;Chu, SNG;Luftman, HS;Mannaerts, JP;Wetzel, RC;Freund, RS; Choquette, Kent D; Hong, M; Chu, SNG; Luftman, HS; Mannaerts, JP; Wetzel, RC; Freund, RS; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T04:31:32Z |
Hydrogen plasma removal of AlGaAs oxides before molecular beam epitaxy
|
Choquette, Kent D;Hong, M;Chu, SNG;Luftman, HS;Mannaerts, JP;Wetzel, RC;Freund, RS; Choquette, Kent D; Hong, M; Chu, SNG; Luftman, HS; Mannaerts, JP; Wetzel, RC; Freund, RS; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T04:31:32Z |
Vertical-cavity surface-emitting laser diodes fabricated by in situ dry etching and molecular beam epitaxial regrowth
|
Choquette, Kent D;Hong, M;Freund, RS;Mannaerts, JP;Wetzel, RC;Leibenguth, RE; Choquette, Kent D; Hong, M; Freund, RS; Mannaerts, JP; Wetzel, RC; Leibenguth, RE; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T04:31:32Z |
Vertical-cavity surface-emitting laser diodes fabricated by in situ dry etching and molecular beam epitaxial regrowth
|
Choquette, Kent D;Hong, M;Freund, RS;Mannaerts, JP;Wetzel, RC;Leibenguth, RE; Choquette, Kent D; Hong, M; Freund, RS; Mannaerts, JP; Wetzel, RC; Leibenguth, RE; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T04:31:31Z |
Buried heterostructure surface emitting laser diodes fabricated using integrated vacuum processing
|
Hong, M;Vakhshoori, D;Grover, LH;Mannaerts, JP;Wynn, JD;Freund, RS; Hong, M; Vakhshoori, D; Grover, LH; Mannaerts, JP; Wynn, JD; Freund, RS; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T04:31:31Z |
Buried heterostructure surface emitting laser diodes fabricated using integrated vacuum processing
|
Hong, M;Vakhshoori, D;Grover, LH;Mannaerts, JP;Wynn, JD;Freund, RS; Hong, M; Vakhshoori, D; Grover, LH; Mannaerts, JP; Wynn, JD; Freund, RS; MINGHWEI HONG |
显示项目 101-150 / 268 (共6页)
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