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"mannaerts jp"的相关文件
显示项目 161-185 / 268 (共11页)
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| 臺大學術典藏 |
2018-09-10T04:11:35Z |
Single-crystal GaN/Gd2O3/GaN heterostructure
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MINGHWEI HONG; Lee, CM; Chyi, JI; Anselm, KA; Cho, AY; Ng, HM; Kortan, AR; Mannaerts, JP; Chu, SNG; Kwo, J; Hong, M;Kwo, J;Chu, SNG;Mannaerts, JP;Kortan, AR;Ng, HM;Cho, AY;Anselm, KA;Lee, CM;Chyi, JI; Hong, M |
| 臺大學術典藏 |
2018-09-10T04:11:35Z |
Single-crystal GaN/Gd2O3/GaN heterostructure
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MINGHWEI HONG; Lee, CM; Chyi, JI; Anselm, KA; Cho, AY; Ng, HM; Kortan, AR; Mannaerts, JP; Chu, SNG; Kwo, J; Hong, M;Kwo, J;Chu, SNG;Mannaerts, JP;Kortan, AR;Ng, HM;Cho, AY;Anselm, KA;Lee, CM;Chyi, JI; Hong, M |
| 臺大學術典藏 |
2018-09-10T04:11:35Z |
Optical properties of gallium oxide thin films
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Rebien, M;Henrion, W;Hong, M;Mannaerts, JP;Fleischer, M; Rebien, M; Henrion, W; Hong, M; Mannaerts, JP; Fleischer, M; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T04:11:35Z |
Optical properties of gallium oxide thin films
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Rebien, M;Henrion, W;Hong, M;Mannaerts, JP;Fleischer, M; Rebien, M; Henrion, W; Hong, M; Mannaerts, JP; Fleischer, M; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T04:11:34Z |
Temperature modulation molecular-beam epitaxy and its application to the growth of periodic index separate confinement heterostructure InGaAs quantum-well lasers
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Hong, M;Wu, MC;Chen, YK;Mannaerts, JP;Chin, MA; Hong, M; Wu, MC; Chen, YK; Mannaerts, JP; Chin, MA; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T04:11:34Z |
Temperature modulation molecular-beam epitaxy and its application to the growth of periodic index separate confinement heterostructure InGaAs quantum-well lasers
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Hong, M;Wu, MC;Chen, YK;Mannaerts, JP;Chin, MA; Hong, M; Wu, MC; Chen, YK; Mannaerts, JP; Chin, MA; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T04:11:34Z |
In situ deposition of Au on plasma-prepared GaAs substrates
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Choquette, Kent D; Hong, M; Mannaerts, JP; Siconolfi, DJ; Frankenthal, RP; Baiocchi, FA; Wetzel, RC; Freund, RS; MINGHWEI HONG; Choquette, Kent D;Hong, M;Mannaerts, JP;Siconolfi, DJ;Frankenthal, RP;Baiocchi, FA;Wetzel, RC;Freund, RS |
| 臺大學術典藏 |
2018-09-10T04:11:34Z |
In situ deposition of Au on plasma-prepared GaAs substrates
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Choquette, Kent D; Hong, M; Mannaerts, JP; Siconolfi, DJ; Frankenthal, RP; Baiocchi, FA; Wetzel, RC; Freund, RS; MINGHWEI HONG; Choquette, Kent D;Hong, M;Mannaerts, JP;Siconolfi, DJ;Frankenthal, RP;Baiocchi, FA;Wetzel, RC;Freund, RS |
| 臺大學術典藏 |
2018-09-10T04:11:34Z |
MBE growth and characteristics of periodic index separate confinement heterostructure InGaAs quantum-well lasers
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Hong, M;Wu, MC;Chen, YK;Mannaerts, JP;Chin, MA; Hong, M; Wu, MC; Chen, YK; Mannaerts, JP; Chin, MA; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T04:11:34Z |
MBE growth and characteristics of periodic index separate confinement heterostructure InGaAs quantum-well lasers
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Hong, M;Wu, MC;Chen, YK;Mannaerts, JP;Chin, MA; Hong, M; Wu, MC; Chen, YK; Mannaerts, JP; Chin, MA; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T04:11:34Z |
DC and RF characteristics of depletion-mode GaAs MOSFET employing a thin Ga/sub 2/O/sub 3/(Gd/sub 2/O/sub 3/) gate dielectric layer
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Yang, B;Ye, PD;Kwo, J;Frei, MR;Gossmann, H-JL;Mannaerts, JP;Sergent, M;Hong, M;Ng, KK;Bude, J; Yang, B; Ye, PD; Kwo, J; Frei, MR; Gossmann, H-JL; Mannaerts, JP; Sergent, M; Hong, M; Ng, KK; Bude, J; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T04:11:34Z |
DC and RF characteristics of depletion-mode GaAs MOSFET employing a thin Ga/sub 2/O/sub 3/(Gd/sub 2/O/sub 3/) gate dielectric layer
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Yang, B;Ye, PD;Kwo, J;Frei, MR;Gossmann, H-JL;Mannaerts, JP;Sergent, M;Hong, M;Ng, KK;Bude, J; Yang, B; Ye, PD; Kwo, J; Frei, MR; Gossmann, H-JL; Mannaerts, JP; Sergent, M; Hong, M; Ng, KK; Bude, J; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T04:11:34Z |
Periodic index separate confinement heterostructure InGaAs/AlGaAs quantum well lasers grown by temperature modulation molecular beam epitaxy
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Hong, M;Chen, YK;Wu, MC;V;enberg, JM;Chu, SNG;Mannaerts, JP;Chin, MA; Hong, M; Chen, YK; Wu, MC; V; enberg, JM; Chu, SNG; Mannaerts, JP; Chin, MA; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T04:11:34Z |
Periodic index separate confinement heterostructure InGaAs/AlGaAs quantum well lasers grown by temperature modulation molecular beam epitaxy
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Hong, M;Chen, YK;Wu, MC;V;enberg, JM;Chu, SNG;Mannaerts, JP;Chin, MA; Hong, M; Chen, YK; Wu, MC; V; enberg, JM; Chu, SNG; Mannaerts, JP; Chin, MA; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T04:11:33Z |
Study of AuAgFe/AlGaAs Schottky diodes fabricated byin situ molecular beam epitaxy
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Wang, YH;Houng, MP;Chen, FH;Sze, PW;Hong, M;Mannaerts, JP; Wang, YH; Houng, MP; Chen, FH; Sze, PW; Hong, M; Mannaerts, JP; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T04:11:33Z |
Study of AuAgFe/AlGaAs Schottky diodes fabricated byin situ molecular beam epitaxy
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Wang, YH;Houng, MP;Chen, FH;Sze, PW;Hong, M;Mannaerts, JP; Wang, YH; Houng, MP; Chen, FH; Sze, PW; Hong, M; Mannaerts, JP; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T04:11:33Z |
An investigation of molecular beam epitaxy “in-situ” grown Ag/GaAs schottky diodes
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Wang, YH;Houng, MP;Chen, FH;Sze, PW;Hong, M;Mannaerts, JP; Wang, YH; Houng, MP; Chen, FH; Sze, PW; Hong, M; Mannaerts, JP; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T04:11:33Z |
An investigation of molecular beam epitaxy “in-situ” grown Ag/GaAs schottky diodes
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Wang, YH;Houng, MP;Chen, FH;Sze, PW;Hong, M;Mannaerts, JP; Wang, YH; Houng, MP; Chen, FH; Sze, PW; Hong, M; Mannaerts, JP; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T04:11:33Z |
Advances in high & kappa gate dielectrics for Si and III-V semiconductors
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Kwo, J;Hong, M;Busch, B;Muller, DA;Chabal, YJ;Kortan, AR;Mannaerts, JP;Yang, B;Ye, P;Gossmann, H;others; Kwo, J; Hong, M; Busch, B; Muller, DA; Chabal, YJ; Kortan, AR; Mannaerts, JP; Yang, B; Ye, P; Gossmann, H; others; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T04:11:33Z |
Advances in high & kappa gate dielectrics for Si and III-V semiconductors
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Kwo, J;Hong, M;Busch, B;Muller, DA;Chabal, YJ;Kortan, AR;Mannaerts, JP;Yang, B;Ye, P;Gossmann, H;others; Kwo, J; Hong, M; Busch, B; Muller, DA; Chabal, YJ; Kortan, AR; Mannaerts, JP; Yang, B; Ye, P; Gossmann, H; others; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T04:11:33Z |
Electrical characteristics of ultrathin Pt/Y 2 O 3/Si capacitor with rapid post-metallisation annealing
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Lay, TS;Liu, WD;Kwo, J;Hong, M;Mannaerts, JP; Lay, TS; Liu, WD; Kwo, J; Hong, M; Mannaerts, JP; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T04:11:33Z |
Electrical characteristics of ultrathin Pt/Y 2 O 3/Si capacitor with rapid post-metallisation annealing
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Lay, TS;Liu, WD;Kwo, J;Hong, M;Mannaerts, JP; Lay, TS; Liu, WD; Kwo, J; Hong, M; Mannaerts, JP; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T04:11:33Z |
Impact of metal/oxide interface on DC and RF performance of D-mode GaAs MOSFET employing MBE grown Ga/sub 2/O/sub 3/(Gd/sub 2/O/sub 3/) as gate dielectric
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Yang, B;Ye, PD;Kwo, J;Frei, MR;Gossmann, H-JL;Mannaerts, JP;Sergent, M;Hong, M;Ng, K;Bude, J; Yang, B; Ye, PD; Kwo, J; Frei, MR; Gossmann, H-JL; Mannaerts, JP; Sergent, M; Hong, M; Ng, K; Bude, J; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T04:11:33Z |
Impact of metal/oxide interface on DC and RF performance of D-mode GaAs MOSFET employing MBE grown Ga/sub 2/O/sub 3/(Gd/sub 2/O/sub 3/) as gate dielectric
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Yang, B;Ye, PD;Kwo, J;Frei, MR;Gossmann, H-JL;Mannaerts, JP;Sergent, M;Hong, M;Ng, K;Bude, J; Yang, B; Ye, PD; Kwo, J; Frei, MR; Gossmann, H-JL; Mannaerts, JP; Sergent, M; Hong, M; Ng, K; Bude, J; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T04:11:32Z |
GaN/Gd2O3/GaN Single Crystal Heterostructure
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Hong, M;Kwo, J;Chu, SNG;Mannaerts, JP;Kortan, AR;Ng, HM;Cho, AY;Anselm, KA;Lee, CM;Chyi, JI; Hong, M; Kwo, J; Chu, SNG; Mannaerts, JP; Kortan, AR; Ng, HM; Cho, AY; Anselm, KA; Lee, CM; Chyi, JI; MINGHWEI HONG |
显示项目 161-185 / 268 (共11页)
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每页显示[10|25|50]项目
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