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机构 日期 题名 作者
臺大學術典藏 2018-09-10T03:46:43Z Vertical cavity top-surface emitting lasers with thin Ag mirrors and hybrid reflectors Hong, M; Tu, LW; Gamelin, J; Wang, YH; Fischer, RJ; Schubert, EF; Tai, K; Hasnain, G; Mannaerts, JP; Weir, BE; others; MINGHWEI HONG
臺大學術典藏 2018-09-10T03:46:43Z Short pulse generation by electrical gain switching of vertical cavity surface emitting laser Lin, James; Gamelin, JK; Wang, S; Hong, M; Mannaerts, JP; MINGHWEI HONG
臺大學術典藏 2018-09-10T03:46:43Z A simple way to reduce series resistance in p-doped semiconductor distributed Bragg reflectors Hong, M; Mannaerts, JP; Hong, JM; Fischer, RJ; Tai, K; Kwo, J; V; enberg, JM; Wang, YH; Gamelin, J; MINGHWEI HONG
臺大學術典藏 2018-09-10T03:46:42Z CV and GV characterisation of Ga^ sub 2^ O^ sub 3^(Gd^ sup 2^ O^ sub 3^)/GaN capacitor with low interface state density Lay, TS;Liu, WD;Hong, M;Kwo, J;Mannaerts, JP; Lay, TS; Liu, WD; Hong, M; Kwo, J; Mannaerts, JP; MINGHWEI HONG
臺大學術典藏 2018-09-10T03:46:42Z CV and GV characterisation of Ga^ sub 2^ O^ sub 3^(Gd^ sup 2^ O^ sub 3^)/GaN capacitor with low interface state density Lay, TS;Liu, WD;Hong, M;Kwo, J;Mannaerts, JP; Lay, TS; Liu, WD; Hong, M; Kwo, J; Mannaerts, JP; MINGHWEI HONG
臺大學術典藏 2018-09-10T03:28:36Z Initial growth of Gã 2Õ 3 (Gd̃ 2Õ 3) on GaAs: Key to the attainment of a low interfacial density of states Hong, M; Lu, ZH; Kwo, J; Kortan, AR; Mannaerts, JP; Krajewski, JJ; Hsieh, KC; Chou, LJ; Cheng, KY; MINGHWEI HONG
臺大學術典藏 2018-09-10T03:28:36Z High E gate dielectrics Gd2O3 and Y2O3 for silicon Boone, T; Krajewski, JJ; Sergent, AM; Rosamilia, JM; MINGHWEI HONG; Mannaerts, JP; Kwo, J; Hong, M; Kortan, AR; Queeney, KT; Chabal, YJ
臺大學術典藏 2018-09-10T03:28:35Z First demonstration of GaAs CMOS Hong, M; Baillargeon, JN; Kwo, J; Mannaerts, JP; Cho, AY; MINGHWEI HONG
臺大學術典藏 2018-09-10T03:28:35Z Characteristics of Ga2O3 (Gd2O3)/GaAs interface: Structures and compositions Hong, M; Kortan, AR; Kwo, J; Mannaerts, JP; Krajewski, JJ; Lu, ZH; Hsieh, KC; Cheng, KY; MINGHWEI HONG
臺大學術典藏 2018-09-10T03:28:35Z Properties of Ga2O3 (Gd2O3)/GaN metal-insulator-semiconductor diodes Hong, M; Anselm, KA; Kwo, J; Ng, HM; Baillargeon, JN; Kortan, AR; Mannaerts, JP; Cho, AY; Lee, CM; Chyi, JI; others; MINGHWEI HONG

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