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"mannaerts jp"的相關文件
顯示項目 51-75 / 268 (共11頁) << < 1 2 3 4 5 6 7 8 9 10 > >> 每頁顯示[10|25|50]項目
| 臺大學術典藏 |
2018-09-10T05:56:14Z |
Structure of Sc 2 O 3 films epitaxially grown on $α$-Al 2 O 3 (0001)
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Kortan, AR; Kopylov, N; Kwo, J; Hong, M; Chen, CP; Mannaerts, JP; Liou, Sy\\_Hwang; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T05:56:12Z |
Recombination velocity at oxide-GaAs interfaces fabricated by in situ molecular beam epitaxy
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Passlack, M;Hong, M;Mannaerts, JP;Kwo, JR;Tu, LW; Passlack, M; Hong, M; Mannaerts, JP; Kwo, JR; Tu, LW; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T05:56:12Z |
Recombination velocity at oxide-GaAs interfaces fabricated by in situ molecular beam epitaxy
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Passlack, M;Hong, M;Mannaerts, JP;Kwo, JR;Tu, LW; Passlack, M; Hong, M; Mannaerts, JP; Kwo, JR; Tu, LW; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T05:56:12Z |
Low interface state density oxide-GaAs structures fabricated by insitu molecular beam epitaxy
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Hong, M; Passlack, M; Mannaerts, JP; Kwo, J; Chu, SNG; Moriya, N; Hou, SY; Fratello, VJ; MINGHWEI HONG; Hong, M;Passlack, M;Mannaerts, JP;Kwo, J;Chu, SNG;Moriya, N;Hou, SY;Fratello, VJ |
| 臺大學術典藏 |
2018-09-10T05:56:12Z |
Low interface state density oxide-GaAs structures fabricated by insitu molecular beam epitaxy
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Hong, M; Passlack, M; Mannaerts, JP; Kwo, J; Chu, SNG; Moriya, N; Hou, SY; Fratello, VJ; MINGHWEI HONG; Hong, M;Passlack, M;Mannaerts, JP;Kwo, J;Chu, SNG;Moriya, N;Hou, SY;Fratello, VJ |
| 臺大學術典藏 |
2018-09-10T05:56:12Z |
Quasistatic and high frequency capacitance-voltage characterization of Ga2O3-GaAs structures fabricated by insitu molecular beam epitaxy
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Passlack, M;Hong, M;Mannaerts, JP; Passlack, M; Hong, M; Mannaerts, JP; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T05:56:12Z |
Quasistatic and high frequency capacitance-voltage characterization of Ga2O3-GaAs structures fabricated by insitu molecular beam epitaxy
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Passlack, M;Hong, M;Mannaerts, JP; Passlack, M; Hong, M; Mannaerts, JP; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T05:56:11Z |
GaAs surface passivation using in-situ oxide deposition
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Passlack, M;Hong, M;Opila, RL;Mannaerts, JP;Kwo, JR; Passlack, M; Hong, M; Opila, RL; Mannaerts, JP; Kwo, JR; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T05:56:11Z |
GaAs surface passivation using in-situ oxide deposition
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Passlack, M;Hong, M;Opila, RL;Mannaerts, JP;Kwo, JR; Passlack, M; Hong, M; Opila, RL; Mannaerts, JP; Kwo, JR; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T05:56:11Z |
C-V and G-V characterization of in-situ fabricated Ga 2 O 3 GaAs interfaces for inversion/accumulation device and surface passivation applications
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Passlack, M;Hong, M;Mannaerts, JP; Passlack, M; Hong, M; Mannaerts, JP; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T05:56:11Z |
C-V and G-V characterization of in-situ fabricated Ga 2 O 3 GaAs interfaces for inversion/accumulation device and surface passivation applications
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Passlack, M;Hong, M;Mannaerts, JP; Passlack, M; Hong, M; Mannaerts, JP; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T05:56:10Z |
Observation of inversion layers at Ga 2 O 3-GaAs interfaces fabricated by in-situ molecular-beam epitaxy
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Passlack, M;Hong, M;Mannaerts, JP; Passlack, M; Hong, M; Mannaerts, JP; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T05:56:10Z |
Observation of inversion layers at Ga 2 O 3-GaAs interfaces fabricated by in-situ molecular-beam epitaxy
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Passlack, M;Hong, M;Mannaerts, JP; Passlack, M; Hong, M; Mannaerts, JP; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T05:21:16Z |
Coherent oscillations in semiconductor microcavities
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Wang, Hailin; Shah, Jagdeep; Damen, TC; Jan, WY; Cunningham, JE; Hong, M; Mannaerts, JP; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T05:21:15Z |
Depth-profile study of the electronic structures at Ga 2 O 3 (Gd 2 O 3) and Gd 2 O 3-GaN interfaces by X-ray photoelectron spectroscopy
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Lay, TS; Liao, YY; Hung, Wei-Hsiu; Hong, M; Kwo, J; Mannaerts, JP; Lay, TS; Liao, YY; Hung, Wei-Hsiu; Hong, M; Kwo, J; Mannaerts, JP; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T05:21:15Z |
Depth-profile study of the electronic structures at Ga 2 O 3 (Gd 2 O 3) and Gd 2 O 3-GaN interfaces by X-ray photoelectron spectroscopy
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Lay, TS; Liao, YY; Hung, Wei-Hsiu; Hong, M; Kwo, J; Mannaerts, JP; Lay, TS; Liao, YY; Hung, Wei-Hsiu; Hong, M; Kwo, J; Mannaerts, JP; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T05:21:15Z |
MBE-grown high $κ$ gate dielectrics of HfO 2 and (Hf-Al) O 2 for Si and III-V semiconductors nano-electronics
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Lee, WC; Lee, YJ; Wu, YD; Chang, P; Huang, YL; Hsu, YL; Mannaerts, JP; Lo, RL; Chen, FR; Maikap, S; others; Lee, WC; Lee, YJ; Wu, YD; Chang, P; Huang, YL; Hsu, YL; Mannaerts, JP; Lo, RL; Chen, FR; Maikap, S; others; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T05:21:15Z |
MBE-grown high $κ$ gate dielectrics of HfO 2 and (Hf-Al) O 2 for Si and III-V semiconductors nano-electronics
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Lee, WC; Lee, YJ; Wu, YD; Chang, P; Huang, YL; Hsu, YL; Mannaerts, JP; Lo, RL; Chen, FR; Maikap, S; others; Lee, WC; Lee, YJ; Wu, YD; Chang, P; Huang, YL; Hsu, YL; Mannaerts, JP; Lo, RL; Chen, FR; Maikap, S; others; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T05:21:15Z |
High-quality thin single-crystal $γ$-Al2O3 films grown on Si (111)
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Wu, SY; Hong, M; Kortan, AR; Kwo, J; Mannaerts, JP; Lee, WC; Huang, YL; Wu, SY; Hong, M; Kortan, AR; Kwo, J; Mannaerts, JP; Lee, WC; Huang, YL; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T05:21:15Z |
High-quality thin single-crystal $γ$-Al2O3 films grown on Si (111)
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Wu, SY; Hong, M; Kortan, AR; Kwo, J; Mannaerts, JP; Lee, WC; Huang, YL; Wu, SY; Hong, M; Kortan, AR; Kwo, J; Mannaerts, JP; Lee, WC; Huang, YL; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T05:21:15Z |
Thermodynamic stability of Ga2O3 (Gd2O3)/GaAs interface
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Huang, YL; Chang, P; Yang, ZK; Lee, YJ; Lee, HY; Liu, HJ; Kwo, J; Mannaerts, JP; Hong, M; Huang, YL; Chang, P; Yang, ZK; Lee, YJ; Lee, HY; Liu, HJ; Kwo, J; Mannaerts, JP; Hong, M; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T05:21:15Z |
Thermodynamic stability of Ga2O3 (Gd2O3)/GaAs interface
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Huang, YL; Chang, P; Yang, ZK; Lee, YJ; Lee, HY; Liu, HJ; Kwo, J; Mannaerts, JP; Hong, M; Huang, YL; Chang, P; Yang, ZK; Lee, YJ; Lee, HY; Liu, HJ; Kwo, J; Mannaerts, JP; Hong, M; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T05:21:14Z |
Thin single-crystal Sc 2 O 3 films epitaxially grown on Si (111)—structure and electrical properties
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Chen, CP; Hong, M; Kwo, J; Cheng, HM; Huang, YL; Lin, SY; Chi, J; Lee, HY; Hsieh, YF; Mannaerts, JP; Chen, CP; Hong, M; Kwo, J; Cheng, HM; Huang, YL; Lin, SY; Chi, J; Lee, HY; Hsieh, YF; Mannaerts, JP; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T05:21:14Z |
Thin single-crystal Sc 2 O 3 films epitaxially grown on Si (111)—structure and electrical properties
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Chen, CP; Hong, M; Kwo, J; Cheng, HM; Huang, YL; Lin, SY; Chi, J; Lee, HY; Hsieh, YF; Mannaerts, JP; Chen, CP; Hong, M; Kwo, J; Cheng, HM; Huang, YL; Lin, SY; Chi, J; Lee, HY; Hsieh, YF; Mannaerts, JP; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T05:21:13Z |
Demonstration of an isolated buried channel field-effect transistor fabricated via in situ patterned electron-beam deposition of Si in GaAs
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Mills Jr, AP; Hong, M; Mannaerts, JP; Pfeiffer, LN; West, KW; Martin, S; Ruel, RR; Baldwin, KW; Rowe, JE; MINGHWEI HONG |
顯示項目 51-75 / 268 (共11頁) << < 1 2 3 4 5 6 7 8 9 10 > >> 每頁顯示[10|25|50]項目
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