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"mannaerts jp"的相關文件
顯示項目 61-110 / 268 (共6頁)
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| 臺大學術典藏 |
2018-09-10T05:56:11Z |
C-V and G-V characterization of in-situ fabricated Ga 2 O 3 GaAs interfaces for inversion/accumulation device and surface passivation applications
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Passlack, M;Hong, M;Mannaerts, JP; Passlack, M; Hong, M; Mannaerts, JP; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T05:56:10Z |
Observation of inversion layers at Ga 2 O 3-GaAs interfaces fabricated by in-situ molecular-beam epitaxy
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Passlack, M;Hong, M;Mannaerts, JP; Passlack, M; Hong, M; Mannaerts, JP; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T05:56:10Z |
Observation of inversion layers at Ga 2 O 3-GaAs interfaces fabricated by in-situ molecular-beam epitaxy
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Passlack, M;Hong, M;Mannaerts, JP; Passlack, M; Hong, M; Mannaerts, JP; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T05:21:16Z |
Coherent oscillations in semiconductor microcavities
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Wang, Hailin; Shah, Jagdeep; Damen, TC; Jan, WY; Cunningham, JE; Hong, M; Mannaerts, JP; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T05:21:15Z |
Depth-profile study of the electronic structures at Ga 2 O 3 (Gd 2 O 3) and Gd 2 O 3-GaN interfaces by X-ray photoelectron spectroscopy
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Lay, TS; Liao, YY; Hung, Wei-Hsiu; Hong, M; Kwo, J; Mannaerts, JP; Lay, TS; Liao, YY; Hung, Wei-Hsiu; Hong, M; Kwo, J; Mannaerts, JP; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T05:21:15Z |
Depth-profile study of the electronic structures at Ga 2 O 3 (Gd 2 O 3) and Gd 2 O 3-GaN interfaces by X-ray photoelectron spectroscopy
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Lay, TS; Liao, YY; Hung, Wei-Hsiu; Hong, M; Kwo, J; Mannaerts, JP; Lay, TS; Liao, YY; Hung, Wei-Hsiu; Hong, M; Kwo, J; Mannaerts, JP; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T05:21:15Z |
MBE-grown high $κ$ gate dielectrics of HfO 2 and (Hf-Al) O 2 for Si and III-V semiconductors nano-electronics
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Lee, WC; Lee, YJ; Wu, YD; Chang, P; Huang, YL; Hsu, YL; Mannaerts, JP; Lo, RL; Chen, FR; Maikap, S; others; Lee, WC; Lee, YJ; Wu, YD; Chang, P; Huang, YL; Hsu, YL; Mannaerts, JP; Lo, RL; Chen, FR; Maikap, S; others; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T05:21:15Z |
MBE-grown high $κ$ gate dielectrics of HfO 2 and (Hf-Al) O 2 for Si and III-V semiconductors nano-electronics
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Lee, WC; Lee, YJ; Wu, YD; Chang, P; Huang, YL; Hsu, YL; Mannaerts, JP; Lo, RL; Chen, FR; Maikap, S; others; Lee, WC; Lee, YJ; Wu, YD; Chang, P; Huang, YL; Hsu, YL; Mannaerts, JP; Lo, RL; Chen, FR; Maikap, S; others; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T05:21:15Z |
High-quality thin single-crystal $γ$-Al2O3 films grown on Si (111)
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Wu, SY; Hong, M; Kortan, AR; Kwo, J; Mannaerts, JP; Lee, WC; Huang, YL; Wu, SY; Hong, M; Kortan, AR; Kwo, J; Mannaerts, JP; Lee, WC; Huang, YL; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T05:21:15Z |
High-quality thin single-crystal $γ$-Al2O3 films grown on Si (111)
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Wu, SY; Hong, M; Kortan, AR; Kwo, J; Mannaerts, JP; Lee, WC; Huang, YL; Wu, SY; Hong, M; Kortan, AR; Kwo, J; Mannaerts, JP; Lee, WC; Huang, YL; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T05:21:15Z |
Thermodynamic stability of Ga2O3 (Gd2O3)/GaAs interface
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Huang, YL; Chang, P; Yang, ZK; Lee, YJ; Lee, HY; Liu, HJ; Kwo, J; Mannaerts, JP; Hong, M; Huang, YL; Chang, P; Yang, ZK; Lee, YJ; Lee, HY; Liu, HJ; Kwo, J; Mannaerts, JP; Hong, M; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T05:21:15Z |
Thermodynamic stability of Ga2O3 (Gd2O3)/GaAs interface
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Huang, YL; Chang, P; Yang, ZK; Lee, YJ; Lee, HY; Liu, HJ; Kwo, J; Mannaerts, JP; Hong, M; Huang, YL; Chang, P; Yang, ZK; Lee, YJ; Lee, HY; Liu, HJ; Kwo, J; Mannaerts, JP; Hong, M; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T05:21:14Z |
Thin single-crystal Sc 2 O 3 films epitaxially grown on Si (111)—structure and electrical properties
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Chen, CP; Hong, M; Kwo, J; Cheng, HM; Huang, YL; Lin, SY; Chi, J; Lee, HY; Hsieh, YF; Mannaerts, JP; Chen, CP; Hong, M; Kwo, J; Cheng, HM; Huang, YL; Lin, SY; Chi, J; Lee, HY; Hsieh, YF; Mannaerts, JP; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T05:21:14Z |
Thin single-crystal Sc 2 O 3 films epitaxially grown on Si (111)—structure and electrical properties
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Chen, CP; Hong, M; Kwo, J; Cheng, HM; Huang, YL; Lin, SY; Chi, J; Lee, HY; Hsieh, YF; Mannaerts, JP; Chen, CP; Hong, M; Kwo, J; Cheng, HM; Huang, YL; Lin, SY; Chi, J; Lee, HY; Hsieh, YF; Mannaerts, JP; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T05:21:13Z |
Demonstration of an isolated buried channel field-effect transistor fabricated via in situ patterned electron-beam deposition of Si in GaAs
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Mills Jr, AP; Hong, M; Mannaerts, JP; Pfeiffer, LN; West, KW; Martin, S; Ruel, RR; Baldwin, KW; Rowe, JE; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T05:21:12Z |
In situ fabricated Ga2O3-GaAs structures with low interface recombination velocity
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Kwo, JR; Mannaerts, JP; Chu, SNG; Moriya, N; Thiel, FA; MINGHWEI HONG; Schubert, EF; Passlack, M;Hong, M;Schubert, EF;Kwo, JR;Mannaerts, JP;Chu, SNG;Moriya, N;Thiel, FA; Passlack, M; Hong, M |
| 臺大學術典藏 |
2018-09-10T05:21:12Z |
In situ fabricated Ga2O3-GaAs structures with low interface recombination velocity
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Kwo, JR; Mannaerts, JP; Chu, SNG; Moriya, N; Thiel, FA; MINGHWEI HONG; Schubert, EF; Passlack, M;Hong, M;Schubert, EF;Kwo, JR;Mannaerts, JP;Chu, SNG;Moriya, N;Thiel, FA; Passlack, M; Hong, M |
| 臺大學術典藏 |
2018-09-10T05:21:12Z |
Ga2O3 films for electronic and optoelectronic applications
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Passlack, M; Schubert, EF; Hobson, WS; Hong, M; Moriya, N; Chu, SNG; Konstadinidis, K; Mannaerts, JP; Schnoes, ML; Zydzik, GJ; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T05:21:11Z |
RECORD LOW-RESISTANCE VERTICAL-CAVITY SURFACE-EMITTING LASERS GROWN BY MOLECULAR-BEAM EPITAXY USING HYBRID MIRROR APPROACH
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Hong, M;Vakhshoori, D;Mannaerts, JP;Thiel, FA; Hong, M; Vakhshoori, D; Mannaerts, JP; Thiel, FA; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T05:21:11Z |
RECORD LOW-RESISTANCE VERTICAL-CAVITY SURFACE-EMITTING LASERS GROWN BY MOLECULAR-BEAM EPITAXY USING HYBRID MIRROR APPROACH
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Hong, M;Vakhshoori, D;Mannaerts, JP;Thiel, FA; Hong, M; Vakhshoori, D; Mannaerts, JP; Thiel, FA; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T05:21:11Z |
Capacitance-voltage and current-voltage characterization of AlxGa1- xAs-GaAs structures
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Passlack, M;Hong, M;Mannaerts, JP;Chiu, TH;Mendonca, CA;Centanni, JC; Passlack, M; Hong, M; Mannaerts, JP; Chiu, TH; Mendonca, CA; Centanni, JC; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T05:21:11Z |
Capacitance-voltage and current-voltage characterization of AlxGa1- xAs-GaAs structures
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Passlack, M;Hong, M;Mannaerts, JP;Chiu, TH;Mendonca, CA;Centanni, JC; Passlack, M; Hong, M; Mannaerts, JP; Chiu, TH; Mendonca, CA; Centanni, JC; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T05:21:11Z |
Low resistivity vertical-cavity surface emitting lasers grown by molecular-beam epitaxy using sinusoidal-composition grading in mirrors and insitu nonalloyed ohmic contacts
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Hong, M;Vakhshoori, D;Mannaerts, JP;Hsieh, Y-F; Hong, M; Vakhshoori, D; Mannaerts, JP; Hsieh, Y-F; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T05:21:11Z |
Low resistivity vertical-cavity surface emitting lasers grown by molecular-beam epitaxy using sinusoidal-composition grading in mirrors and insitu nonalloyed ohmic contacts
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Hong, M;Vakhshoori, D;Mannaerts, JP;Hsieh, Y-F; Hong, M; Vakhshoori, D; Mannaerts, JP; Hsieh, Y-F; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T05:21:10Z |
Department of Materials Science and Engineering, National Tsing Hua University, Hsin Chu, 300, Taiwan
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Lee, WC; Lee, YJ; Wu, YD; Chang, P; Huang, YL; Hsu, YL; Mannaerts, JP; Lo, RL; Chen, FR; Maikap, S; others; Lee, WC; Lee, YJ; Wu, YD; Chang, P; Huang, YL; Hsu, YL; Mannaerts, JP; Lo, RL; Chen, FR; Maikap, S; others; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T05:21:10Z |
Department of Materials Science and Engineering, National Tsing Hua University, Hsin Chu, 300, Taiwan
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Lee, WC; Lee, YJ; Wu, YD; Chang, P; Huang, YL; Hsu, YL; Mannaerts, JP; Lo, RL; Chen, FR; Maikap, S; others; Lee, WC; Lee, YJ; Wu, YD; Chang, P; Huang, YL; Hsu, YL; Mannaerts, JP; Lo, RL; Chen, FR; Maikap, S; others; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T05:21:10Z |
Ga203 films for electronic and optoelectronic ap
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Passlack, M;Schubert, EF;Hobson, WS;Hong, M;Moriya, N;Chu, SNG;Konstadinidis, K;Mannaerts, JP;Schnoes, ML;Zydzik, GJ; Passlack, M; Schubert, EF; Hobson, WS; Hong, M; Moriya, N; Chu, SNG; Konstadinidis, K; Mannaerts, JP; Schnoes, ML; Zydzik, GJ; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T05:21:10Z |
Ga203 films for electronic and optoelectronic ap
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Passlack, M;Schubert, EF;Hobson, WS;Hong, M;Moriya, N;Chu, SNG;Konstadinidis, K;Mannaerts, JP;Schnoes, ML;Zydzik, GJ; Passlack, M; Schubert, EF; Hobson, WS; Hong, M; Moriya, N; Chu, SNG; Konstadinidis, K; Mannaerts, JP; Schnoes, ML; Zydzik, GJ; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T05:21:10Z |
GA2O3 FILMS FOR INSULATOR/III-V SEMICONDUCTOR INTERFACES
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Passlack, M;Hong, M;Schubert, EF;Mannaerts, JP;HOBSON, WS;MORIYA, N;LOPATA, J;ZYDZIK, GJ; Passlack, M; Hong, M; Schubert, EF; Mannaerts, JP; HOBSON, WS; MORIYA, N; LOPATA, J; ZYDZIK, GJ; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T05:21:10Z |
GA2O3 FILMS FOR INSULATOR/III-V SEMICONDUCTOR INTERFACES
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Passlack, M;Hong, M;Schubert, EF;Mannaerts, JP;HOBSON, WS;MORIYA, N;LOPATA, J;ZYDZIK, GJ; Passlack, M; Hong, M; Schubert, EF; Mannaerts, JP; HOBSON, WS; MORIYA, N; LOPATA, J; ZYDZIK, GJ; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T04:51:59Z |
Epitaxial Growth and Structure of Thin Single Crystal $γ$-Al 2 O 3 Films on Si (111) Using e-Beam Evaporation of Sapphire in Ultra-High Vacuum
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Hong, M; Kortan, AR; Kwo, J; Mannaerts, JP; Wu, SY; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T04:51:59Z |
Dielectrically-bonded long wavelength vertical cavity laser on GaAs substrates using strain-compensated multiple quantum wells
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Chua, CL;Lin, CH;Zhu, ZH;Lo, YH;Hong, Mingyi;Mannaerts, JP;Bhat, R; Chua, CL; Lin, CH; Zhu, ZH; Lo, YH; Hong, Mingyi; Mannaerts, JP; Bhat, R; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T04:51:59Z |
Dielectrically-bonded long wavelength vertical cavity laser on GaAs substrates using strain-compensated multiple quantum wells
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Chua, CL;Lin, CH;Zhu, ZH;Lo, YH;Hong, Mingyi;Mannaerts, JP;Bhat, R; Chua, CL; Lin, CH; Zhu, ZH; Lo, YH; Hong, Mingyi; Mannaerts, JP; Bhat, R; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T04:51:58Z |
Dielectric properties of electron-beam deposited Ga2O3 films
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Passlack, M;Hunt, NEJ;Schubert, EF;Zydzik, GJ;Hong, M;Mannaerts, JP;Opila, RL;Fischer, RJ; Passlack, M; Hunt, NEJ; Schubert, EF; Zydzik, GJ; Hong, M; Mannaerts, JP; Opila, RL; Fischer, RJ; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T04:51:58Z |
Dielectric properties of electron-beam deposited Ga2O3 films
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Passlack, M;Hunt, NEJ;Schubert, EF;Zydzik, GJ;Hong, M;Mannaerts, JP;Opila, RL;Fischer, RJ; Passlack, M; Hunt, NEJ; Schubert, EF; Zydzik, GJ; Hong, M; Mannaerts, JP; Opila, RL; Fischer, RJ; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T04:51:58Z |
Structure of Sc 2 O 3 Films Epitaxially Grown on $α$-Al 2 O 3 (111)
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Kortan, AR; Hong, M; Kwo, J; Chang, P; Chen, CP; Mannaerts, JP; Liou, SH; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T04:51:58Z |
Fundamental Study and Oxide Reliability of the MBE-Grown Ga 2- x Gd x O 3 Dielectric Oxide for Compound Semiconductor MOSFETs
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Kwo, J; Hong, M; Mannaerts, JP; Lee, YJ; Wu, YD; Lee, WG; Milkap, S; Yang, B; Gustaffson, T; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T04:51:58Z |
Long wavelength vertical cavity laser using strain-compensated multiple quantum wells on GaAs substrates
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Chua, CL;Lin, CH;Zhu, ZH;Lo, YH;Hong, M;Mannaerts, JP;Bhat, R; Chua, CL; Lin, CH; Zhu, ZH; Lo, YH; Hong, M; Mannaerts, JP; Bhat, R; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T04:51:58Z |
Long wavelength vertical cavity laser using strain-compensated multiple quantum wells on GaAs substrates
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Chua, CL;Lin, CH;Zhu, ZH;Lo, YH;Hong, M;Mannaerts, JP;Bhat, R; Chua, CL; Lin, CH; Zhu, ZH; Lo, YH; Hong, M; Mannaerts, JP; Bhat, R; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T04:51:58Z |
GaAs-Based metal-oxide semiconductor field-effect transistors with Al2O3 gate dielectrics grown by atomic layer deposition
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Ye, PD; Wilk, GD; Yang, B; Kwo, J; Gossmann, H-JL; Frei, M; Mannaerts, JP; Sergent, M; Hong, M; Ng, KK; others; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T04:51:57Z |
In situ nonalloyed ohmic contacts to p-GaAs
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Hong, M;Vakhshoori, D;Mannaerts, JP;Thiel, FA;Wynn, JD; Hong, M; Vakhshoori, D; Mannaerts, JP; Thiel, FA; Wynn, JD; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T04:51:57Z |
In situ nonalloyed ohmic contacts to p-GaAs
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Hong, M;Vakhshoori, D;Mannaerts, JP;Thiel, FA;Wynn, JD; Hong, M; Vakhshoori, D; Mannaerts, JP; Thiel, FA; Wynn, JD; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T04:51:57Z |
Buried heterostructure laser diodes fabricated using in situ processing
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Hong, M;Vakhshoori, D;Grober, LH;Mannaerts, JP;Asom, MT;Wynn, JD;Thiel, FA;Freund, RS; Hong, M; Vakhshoori, D; Grober, LH; Mannaerts, JP; Asom, MT; Wynn, JD; Thiel, FA; Freund, RS; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T04:51:57Z |
Buried heterostructure laser diodes fabricated using in situ processing
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Hong, M;Vakhshoori, D;Grober, LH;Mannaerts, JP;Asom, MT;Wynn, JD;Thiel, FA;Freund, RS; Hong, M; Vakhshoori, D; Grober, LH; Mannaerts, JP; Asom, MT; Wynn, JD; Thiel, FA; Freund, RS; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T04:51:57Z |
In-situ process for AlGaAs compound semiconductor: Materials science and device fabrication
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Hong, M;Choquette, KD;Mannaerts, JP;Grober, LH;Freund, RS;Vakhshoori, D;Chu, SNG;Luftman, HS;Wetzel, RC; Hong, M; Choquette, KD; Mannaerts, JP; Grober, LH; Freund, RS; Vakhshoori, D; Chu, SNG; Luftman, HS; Wetzel, RC; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T04:51:57Z |
In-situ process for AlGaAs compound semiconductor: Materials science and device fabrication
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Hong, M;Choquette, KD;Mannaerts, JP;Grober, LH;Freund, RS;Vakhshoori, D;Chu, SNG;Luftman, HS;Wetzel, RC; Hong, M; Choquette, KD; Mannaerts, JP; Grober, LH; Freund, RS; Vakhshoori, D; Chu, SNG; Luftman, HS; Wetzel, RC; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T04:51:57Z |
Interfacial characteristics of AlGaAs after insitu electron cyclotron resonance plasma etching and molecular beam epitaxial regrowth
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Hong, M;Mannaerts, JP;Grober, L;Chu, SNG;Luftman, HS;Choquette, KD;Freund, RS; Hong, M; Mannaerts, JP; Grober, L; Chu, SNG; Luftman, HS; Choquette, KD; Freund, RS; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T04:51:57Z |
Interfacial characteristics of AlGaAs after insitu electron cyclotron resonance plasma etching and molecular beam epitaxial regrowth
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Hong, M;Mannaerts, JP;Grober, L;Chu, SNG;Luftman, HS;Choquette, KD;Freund, RS; Hong, M; Mannaerts, JP; Grober, L; Chu, SNG; Luftman, HS; Choquette, KD; Freund, RS; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T04:51:56Z |
AlGaAs Surface Reconstruction after Cl 2 Chemical Etch and Ultra High Vacuum Anneal
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Hong, M;Mannaerts, JP;Grober, LH;Thiel, FA;Freund, RS; Hong, M; Mannaerts, JP; Grober, LH; Thiel, FA; Freund, RS; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T04:51:56Z |
AlGaAs Surface Reconstruction after Cl 2 Chemical Etch and Ultra High Vacuum Anneal
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Hong, M;Mannaerts, JP;Grober, LH;Thiel, FA;Freund, RS; Hong, M; Mannaerts, JP; Grober, LH; Thiel, FA; Freund, RS; MINGHWEI HONG |
顯示項目 61-110 / 268 (共6頁)
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