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Showing items 1-7 of 7 (1 Page(s) Totally)
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| 臺大學術典藏 |
2018-09-10T07:01:25Z |
Effect of temperature on Ga2O3 (Gd2O3)/GaN metal-oxide-semiconductor field-effect transistors
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Ren, F; Hong, M; Chu, SNG; Marcus, MA; Schurman, MJ; Baca, A; Pearton, SJ; Abernathy, CR; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T07:01:22Z |
Demonstration of GaN MIS diodes by using AlN and Ga 2 O 3 (Gd 2 O 3) as dielectrics
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Ren, F; Abernathy, CR; MacKenzie, JD; Gila, BP; Pearton, SJ; Hong, M; Marcus, MA; Schurman, MJ; Baca, AG; Shul, RJ; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T07:01:21Z |
Structural properties of Ga2O3 (Gd2O3)-GaAs interfaces
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Hong, M; Marcus, MA; Kwo, J; Mannaerts, JP; Sergent, AM; Chou, LJ; Hsieh, KC; Cheng, KY; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T07:01:14Z |
Effect of Temperature on GaGdO/GaN Metal Oxide Semiconductor Field Effect Transistors
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Abernathy, CR; Baca, A; Chu, SNG; Hong, M; Lothian, JR; Marcus, MA; Pearton, SJ; Ren, F; Schurman, MJ; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T07:01:13Z |
Ga2O3 (Gd2O3) as a dielectric insulator for GaAs device applications
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Lay, Tsong S; Hong, Minghwei; Mannaerts, JP; Liu, CT; Kwo, Jueinai R; Ren, Fan; Marcus, MA; Ng, KK; Chen, Young-Kai; Chou, Li-Jen; others; MINGHWEI HONG |
| 臺大學術典藏 |
1998 |
Ga2O3 (Gd2O3) as a gate dielectric for GaAs MOSFETs
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Hong, M; Kwo, J; Liu, CT; Marcus, MA; Lay, TS; Ren, F; Mannaerts, JP; Ng, KK; Chen, YK; Chou, LJ; others; MINGHWEI HONG |
| 臺大學術典藏 |
1997 |
Growth of Ga 2 O 3 (Gd 2 O 3) using molecular beam epitaxy technique-key to first demonstration of GaAs MOSFETs
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Hong, M; Ren, F; Hobson, WS; Kuo, JM; Kwo, J; Mannaerts, JP; Lothian, JR; Marcus, MA; Liu, CT; Sergent, AM; others; MINGHWEI HONG |
Showing items 1-7 of 7 (1 Page(s) Totally)
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