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Showing items 1-5 of 5 (1 Page(s) Totally)
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| 國立成功大學 |
2022 |
Remarkable Reduction in IG with an Explicit Investigation of the Leakage Conduction Mechanisms in a Dual Surface-Modified Al2O3/SiO2 Stack Layer AlGaN/GaN MOS-HEMT
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Mazumder, S.;Pal, Pal P.;Lee, K.-W.;Wang, Y.-H. |
| 國立成功大學 |
2021 |
Combined implications of UV/O3 interface modulation with HfSiOx surface passivation on AlGaN/AlN/GaN MOS-HEMT
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Mazumder, S.;Li, S.-H.;Wu, Z.-G.;Wang, Y.-H. |
| 國立成功大學 |
2021 |
Performance enhancement in n2 plasma modified algan/aln/gan mos-hemt using hfalox gate dielectric with Γ-shaped gate engineering
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Yang, S.-K.;Mazumder, S.;Wu, Z.-G.;Wang, Y.-H. |
| 國立成功大學 |
2021 |
Ultra-Low Power Robust 3bit/cell Hf0.5Zr0.5O2 Ferroelectric FinFET with High Endurance for Advanced Computing-In-Memory Technology
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De, S.;Lu, D.D.;Le, H.-H.;Mazumder, S.;Lee, Y.-J.;Tseng, W.-C.;Qiu, B.-H.;Baig, Md.A.;Sung, P.-J.;Su, C.-J.;Wu, C.-T.;Wu, Wu W.-F.;Yeh, W.-K.;Wang, Y.-H. |
| 國立成功大學 |
2020 |
Investigation of HfSiOXPassivation Effect on AlGaN/GaN HEMT
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Mazumder, S.;Wang, Y.-H. |
Showing items 1-5 of 5 (1 Page(s) Totally)
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