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"mcalister s p"的相关文件
显示项目 1-23 / 23 (共1页)
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| 國立交通大學 |
2019-04-02T06:04:44Z |
Very low noise in 90nm node RF MOSFETs using a new layout
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Kao, H. L.; Chin, Albert; Liao, C. C.; McAlister, S. P. |
| 國立交通大學 |
2017-04-21T06:49:44Z |
A 2.4/5 GHz dual-band VCO using a variable inductor and switched resonator
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Kao, H. L.; Yang, D. Y.; Chin, Albert; McAlister, S. P. |
| 國立交通大學 |
2017-04-21T06:49:43Z |
A low-power current-reuse LNA for ultra-wideband wireless receivers from 3.1 to 10.6 GHz
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Kao, H. L.; Chin, Albert; Chang, K. C.; McAlister, S. P. |
| 國立交通大學 |
2017-04-21T06:49:10Z |
Improvement of the performance of strained 0.13 mu m MOSFETs mounted on flexible plastic substrates
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Kao, H. L.; Liao, C. C.; McAlister, S. P.; Chin, Albert |
| 國立交通大學 |
2017-04-21T06:48:52Z |
Good 150 degrees C Retention and Fast Erase Characteristics in Charge-Trap-Engineered Memory having a Scaled Si3N4 Layer
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Lin, S. H.; Chin, Albert; Yeh, F. S.; McAlister, S. P. |
| 國立交通大學 |
2014-12-08T15:24:55Z |
DC-RF performance improvement for strained 0.13 mu m MOSFETs mounted on a flexible plastic substrate
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Kao, H. L.; Chin, Albert; Liao, C. C.; Tseng, Y. Y.; McAlister, S. P.; Chi, C. C. |
| 國立交通大學 |
2014-12-08T15:16:09Z |
Comparison of InGaAs MOSFETs with germanium-on-insulator CMOS
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Chin, Albert; Chen, C.; Yu, D. S.; Kao, H. L.; McAlister, S. P.; Chi, C. C. |
| 國立交通大學 |
2014-12-08T15:15:03Z |
Thermal leakage improvement by using a high-work-function ni electrode in high-kappa TiHfO metal-insulator-metal capacitors
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Chiang, K. C.; Huang, C. C.; Pan, H. C.; Hsiao, C. N.; Lin, J. W.; Hsieh, I. J.; Cheng, C. H.; Chou, C. P.; Chin, A.; Hwang, H. L.; McAlister, S. P. |
| 國立交通大學 |
2014-12-08T15:13:35Z |
Use of a high-work-function ni electrode to improve the stress reliability of Analog SrTiO3 metal-insulator-metal capacitors
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Chiang, K. C.; Cheng, C. H.; Jhou, K. Y.; Pan, H. C.; Hsiao, C. N.; Chou, C. P.; McAlister, S. P.; Chin, Albert; Hwang, H. L. |
| 國立交通大學 |
2014-12-08T15:13:18Z |
A program-erasable high-k Hf0.3N0.2O0.5 MIS capacitor with good retention
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Yang, H. J.; Chin, Albert; Chen, W. J.; Cheng, C. F.; Huang, W. L.; Hsieh, I. J.; McAlister, S. P. |
| 國立交通大學 |
2014-12-08T15:13:03Z |
Improved high-temperature leakage in high-density MIM capacitors by using a TiLaO dielectric and an Ir electrode
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Cheng, C. H.; Pan, H. C.; Yang, H. J.; Hsiao, C. N.; Chou, C. P.; McAlister, S. P.; Chin, Albert |
| 國立交通大學 |
2014-12-08T15:13:02Z |
HtLaON n-MOSFETs using a low work function HfSix gate
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Cheng, C. F.; Wu, C. H.; Su, N. C.; Wang, S. J.; McAlister, S. P.; Chin, Albert |
| 國立交通大學 |
2014-12-08T15:12:32Z |
Low subthreshold swing HfLaO/pentacene organic thin-film transistors
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Chang, M. R.; Lee, P. T.; McAlister, S. P.; Chin, Albert |
| 國立交通大學 |
2014-12-08T15:11:06Z |
High density and low leakage current in TiO(2) MIM capacitors processed at 300 degrees C
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Cheng, C. H.; Lin, S. H.; Jhou, K. Y.; Chen, W. J.; Chou, C. P.; Yeh, F. S.; Hu, J.; Hwang, M.; Arikado, T.; McAlister, S. P. |
| 國立交通大學 |
2014-12-08T15:10:51Z |
Improvement of the performance of TiHfO MIM capacitors by using a dual plasma treatment of the lower electrode
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Cheng, C. H.; Pan, H. C.; Huang, C. C.; Chou, C. P.; Hsiao, C. N.; Hu, J.; Hwang, M.; Arikado, T.; McAlister, S. P.; Chin, Albert |
| 國立交通大學 |
2014-12-08T15:10:35Z |
Improved RF Power Performance in a 0.18-mu m MOSFET Which Uses an Asymmetric Drain Design
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Chang, T.; Kao, H. L.; McAlister, S. P.; Horng, K. Y.; Chin, Albert |
| 國立交通大學 |
2014-12-08T15:10:31Z |
A flexible organic pentacene nonvolatile memory based on high-kappa dielectric layers
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Chang, Ming-Feng; Lee, Po-Tsung; McAlister, S. P.; Chin, Albert |
| 國立交通大學 |
2014-12-08T15:10:04Z |
Small-Subthreshold-Swing and Low-Voltage Flexible Organic Thin-Film Transistors Which Use HfLaO as the Gate Dielectric
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Chang, M. F.; Lee, P. T.; McAlister, S. P.; Chin, Albert |
| 國立交通大學 |
2014-12-08T15:09:24Z |
Very low V(t) [Ir-Hf]/HfLaO CMOS using novel self-aligned low temperature shallow junctions
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Cheng, C. F.; Wu, C. H.; Su, N. C.; Wang, S. J.; McAlister, S. P.; Chin, Albert |
| 國立交通大學 |
2014-12-08T15:02:00Z |
A CMOS-Compatible, High RF Power, Asymmetric-LDD MOSFET with Excellent Linearity
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Chang, T.; Kao, H. L.; Chen, Y. J.; Liu, S. L.; McAlister, S. P.; Chin, Albert |
| 國立成功大學 |
2007-12 |
HtLaON n-MOSFETs using a low work function HfSix gate
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Cheng, C. F.; Wu, C. H.; Su, N. C.; Wang, Shui-Jinn; McAlister, S. P.; Chin, Albert |
| 國立成功大學 |
2006-02 |
High work function IrxSi gates on HfAlON p-MOSFETs
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Wu, C. H.; Yu, D. S.; Chin, Albert; Wang, Shui-Jinn; Li, M. F.; Zhu, C.; Hung, B. E.; McAlister, S. P. |
| 國立成功大學 |
2006 |
A quantum trap MONOS memory device using AlN
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Lai, C. H.; Wu, C. H.; Chin, Albert; Wang, Shui-Jinn; McAlister, S. P. |
显示项目 1-23 / 23 (共1页)
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