English  |  正體中文  |  简体中文  |  2826576  
???header.visitor??? :  31998163    ???header.onlineuser??? :  1061
???header.sponsordeclaration???
 
臺灣學術機構典藏系統 (Taiwan Academic Institutional Repository, TAIR)
???ui.leftmenu.abouttair???

???ui.leftmenu.bartitle???

???index.news???

???ui.leftmenu.copyrighttitle???

???ui.leftmenu.link???

"mcalister s p"???jsp.browse.items-by-author.description???

???jsp.browse.items-by-author.back???
???jsp.browse.items-by-author.order1??? ???jsp.browse.items-by-author.order2???

Showing items 1-23 of 23  (1 Page(s) Totally)
1 
View [10|25|50] records per page

Institution Date Title Author
國立交通大學 2019-04-02T06:04:44Z Very low noise in 90nm node RF MOSFETs using a new layout Kao, H. L.; Chin, Albert; Liao, C. C.; McAlister, S. P.
國立交通大學 2017-04-21T06:49:44Z A 2.4/5 GHz dual-band VCO using a variable inductor and switched resonator Kao, H. L.; Yang, D. Y.; Chin, Albert; McAlister, S. P.
國立交通大學 2017-04-21T06:49:43Z A low-power current-reuse LNA for ultra-wideband wireless receivers from 3.1 to 10.6 GHz Kao, H. L.; Chin, Albert; Chang, K. C.; McAlister, S. P.
國立交通大學 2017-04-21T06:49:10Z Improvement of the performance of strained 0.13 mu m MOSFETs mounted on flexible plastic substrates Kao, H. L.; Liao, C. C.; McAlister, S. P.; Chin, Albert
國立交通大學 2017-04-21T06:48:52Z Good 150 degrees C Retention and Fast Erase Characteristics in Charge-Trap-Engineered Memory having a Scaled Si3N4 Layer Lin, S. H.; Chin, Albert; Yeh, F. S.; McAlister, S. P.
國立交通大學 2014-12-08T15:24:55Z DC-RF performance improvement for strained 0.13 mu m MOSFETs mounted on a flexible plastic substrate Kao, H. L.; Chin, Albert; Liao, C. C.; Tseng, Y. Y.; McAlister, S. P.; Chi, C. C.
國立交通大學 2014-12-08T15:16:09Z Comparison of InGaAs MOSFETs with germanium-on-insulator CMOS Chin, Albert; Chen, C.; Yu, D. S.; Kao, H. L.; McAlister, S. P.; Chi, C. C.
國立交通大學 2014-12-08T15:15:03Z Thermal leakage improvement by using a high-work-function ni electrode in high-kappa TiHfO metal-insulator-metal capacitors Chiang, K. C.; Huang, C. C.; Pan, H. C.; Hsiao, C. N.; Lin, J. W.; Hsieh, I. J.; Cheng, C. H.; Chou, C. P.; Chin, A.; Hwang, H. L.; McAlister, S. P.
國立交通大學 2014-12-08T15:13:35Z Use of a high-work-function ni electrode to improve the stress reliability of Analog SrTiO3 metal-insulator-metal capacitors Chiang, K. C.; Cheng, C. H.; Jhou, K. Y.; Pan, H. C.; Hsiao, C. N.; Chou, C. P.; McAlister, S. P.; Chin, Albert; Hwang, H. L.
國立交通大學 2014-12-08T15:13:18Z A program-erasable high-k Hf0.3N0.2O0.5 MIS capacitor with good retention Yang, H. J.; Chin, Albert; Chen, W. J.; Cheng, C. F.; Huang, W. L.; Hsieh, I. J.; McAlister, S. P.
國立交通大學 2014-12-08T15:13:03Z Improved high-temperature leakage in high-density MIM capacitors by using a TiLaO dielectric and an Ir electrode Cheng, C. H.; Pan, H. C.; Yang, H. J.; Hsiao, C. N.; Chou, C. P.; McAlister, S. P.; Chin, Albert
國立交通大學 2014-12-08T15:13:02Z HtLaON n-MOSFETs using a low work function HfSix gate Cheng, C. F.; Wu, C. H.; Su, N. C.; Wang, S. J.; McAlister, S. P.; Chin, Albert
國立交通大學 2014-12-08T15:12:32Z Low subthreshold swing HfLaO/pentacene organic thin-film transistors Chang, M. R.; Lee, P. T.; McAlister, S. P.; Chin, Albert
國立交通大學 2014-12-08T15:11:06Z High density and low leakage current in TiO(2) MIM capacitors processed at 300 degrees C Cheng, C. H.; Lin, S. H.; Jhou, K. Y.; Chen, W. J.; Chou, C. P.; Yeh, F. S.; Hu, J.; Hwang, M.; Arikado, T.; McAlister, S. P.
國立交通大學 2014-12-08T15:10:51Z Improvement of the performance of TiHfO MIM capacitors by using a dual plasma treatment of the lower electrode Cheng, C. H.; Pan, H. C.; Huang, C. C.; Chou, C. P.; Hsiao, C. N.; Hu, J.; Hwang, M.; Arikado, T.; McAlister, S. P.; Chin, Albert
國立交通大學 2014-12-08T15:10:35Z Improved RF Power Performance in a 0.18-mu m MOSFET Which Uses an Asymmetric Drain Design Chang, T.; Kao, H. L.; McAlister, S. P.; Horng, K. Y.; Chin, Albert
國立交通大學 2014-12-08T15:10:31Z A flexible organic pentacene nonvolatile memory based on high-kappa dielectric layers Chang, Ming-Feng; Lee, Po-Tsung; McAlister, S. P.; Chin, Albert
國立交通大學 2014-12-08T15:10:04Z Small-Subthreshold-Swing and Low-Voltage Flexible Organic Thin-Film Transistors Which Use HfLaO as the Gate Dielectric Chang, M. F.; Lee, P. T.; McAlister, S. P.; Chin, Albert
國立交通大學 2014-12-08T15:09:24Z Very low V(t) [Ir-Hf]/HfLaO CMOS using novel self-aligned low temperature shallow junctions Cheng, C. F.; Wu, C. H.; Su, N. C.; Wang, S. J.; McAlister, S. P.; Chin, Albert
國立交通大學 2014-12-08T15:02:00Z A CMOS-Compatible, High RF Power, Asymmetric-LDD MOSFET with Excellent Linearity Chang, T.; Kao, H. L.; Chen, Y. J.; Liu, S. L.; McAlister, S. P.; Chin, Albert
國立成功大學 2007-12 HtLaON n-MOSFETs using a low work function HfSix gate Cheng, C. F.; Wu, C. H.; Su, N. C.; Wang, Shui-Jinn; McAlister, S. P.; Chin, Albert
國立成功大學 2006-02 High work function IrxSi gates on HfAlON p-MOSFETs Wu, C. H.; Yu, D. S.; Chin, Albert; Wang, Shui-Jinn; Li, M. F.; Zhu, C.; Hung, B. E.; McAlister, S. P.
國立成功大學 2006 A quantum trap MONOS memory device using AlN Lai, C. H.; Wu, C. H.; Chin, Albert; Wang, Shui-Jinn; McAlister, S. P.

Showing items 1-23 of 23  (1 Page(s) Totally)
1 
View [10|25|50] records per page