|
|
Taiwan Academic Institutional Repository >
Browse by Author
|
"mcalister s p"
Showing items 1-10 of 23 (3 Page(s) Totally)
1 2 3 > >>
View [10|25|50] records per page
| 國立交通大學 |
2019-04-02T06:04:44Z |
Very low noise in 90nm node RF MOSFETs using a new layout
|
Kao, H. L.; Chin, Albert; Liao, C. C.; McAlister, S. P. |
| 國立交通大學 |
2017-04-21T06:49:44Z |
A 2.4/5 GHz dual-band VCO using a variable inductor and switched resonator
|
Kao, H. L.; Yang, D. Y.; Chin, Albert; McAlister, S. P. |
| 國立交通大學 |
2017-04-21T06:49:43Z |
A low-power current-reuse LNA for ultra-wideband wireless receivers from 3.1 to 10.6 GHz
|
Kao, H. L.; Chin, Albert; Chang, K. C.; McAlister, S. P. |
| 國立交通大學 |
2017-04-21T06:49:10Z |
Improvement of the performance of strained 0.13 mu m MOSFETs mounted on flexible plastic substrates
|
Kao, H. L.; Liao, C. C.; McAlister, S. P.; Chin, Albert |
| 國立交通大學 |
2017-04-21T06:48:52Z |
Good 150 degrees C Retention and Fast Erase Characteristics in Charge-Trap-Engineered Memory having a Scaled Si3N4 Layer
|
Lin, S. H.; Chin, Albert; Yeh, F. S.; McAlister, S. P. |
| 國立交通大學 |
2014-12-08T15:24:55Z |
DC-RF performance improvement for strained 0.13 mu m MOSFETs mounted on a flexible plastic substrate
|
Kao, H. L.; Chin, Albert; Liao, C. C.; Tseng, Y. Y.; McAlister, S. P.; Chi, C. C. |
| 國立交通大學 |
2014-12-08T15:16:09Z |
Comparison of InGaAs MOSFETs with germanium-on-insulator CMOS
|
Chin, Albert; Chen, C.; Yu, D. S.; Kao, H. L.; McAlister, S. P.; Chi, C. C. |
| 國立交通大學 |
2014-12-08T15:15:03Z |
Thermal leakage improvement by using a high-work-function ni electrode in high-kappa TiHfO metal-insulator-metal capacitors
|
Chiang, K. C.; Huang, C. C.; Pan, H. C.; Hsiao, C. N.; Lin, J. W.; Hsieh, I. J.; Cheng, C. H.; Chou, C. P.; Chin, A.; Hwang, H. L.; McAlister, S. P. |
| 國立交通大學 |
2014-12-08T15:13:35Z |
Use of a high-work-function ni electrode to improve the stress reliability of Analog SrTiO3 metal-insulator-metal capacitors
|
Chiang, K. C.; Cheng, C. H.; Jhou, K. Y.; Pan, H. C.; Hsiao, C. N.; Chou, C. P.; McAlister, S. P.; Chin, Albert; Hwang, H. L. |
| 國立交通大學 |
2014-12-08T15:13:18Z |
A program-erasable high-k Hf0.3N0.2O0.5 MIS capacitor with good retention
|
Yang, H. J.; Chin, Albert; Chen, W. J.; Cheng, C. F.; Huang, W. L.; Hsieh, I. J.; McAlister, S. P. |
Showing items 1-10 of 23 (3 Page(s) Totally)
1 2 3 > >>
View [10|25|50] records per page
|
