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"mcalister s p"的相關文件
顯示項目 11-23 / 23 (共1頁)
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| 國立交通大學 |
2014-12-08T15:13:03Z |
Improved high-temperature leakage in high-density MIM capacitors by using a TiLaO dielectric and an Ir electrode
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Cheng, C. H.; Pan, H. C.; Yang, H. J.; Hsiao, C. N.; Chou, C. P.; McAlister, S. P.; Chin, Albert |
| 國立交通大學 |
2014-12-08T15:13:02Z |
HtLaON n-MOSFETs using a low work function HfSix gate
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Cheng, C. F.; Wu, C. H.; Su, N. C.; Wang, S. J.; McAlister, S. P.; Chin, Albert |
| 國立交通大學 |
2014-12-08T15:12:32Z |
Low subthreshold swing HfLaO/pentacene organic thin-film transistors
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Chang, M. R.; Lee, P. T.; McAlister, S. P.; Chin, Albert |
| 國立交通大學 |
2014-12-08T15:11:06Z |
High density and low leakage current in TiO(2) MIM capacitors processed at 300 degrees C
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Cheng, C. H.; Lin, S. H.; Jhou, K. Y.; Chen, W. J.; Chou, C. P.; Yeh, F. S.; Hu, J.; Hwang, M.; Arikado, T.; McAlister, S. P. |
| 國立交通大學 |
2014-12-08T15:10:51Z |
Improvement of the performance of TiHfO MIM capacitors by using a dual plasma treatment of the lower electrode
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Cheng, C. H.; Pan, H. C.; Huang, C. C.; Chou, C. P.; Hsiao, C. N.; Hu, J.; Hwang, M.; Arikado, T.; McAlister, S. P.; Chin, Albert |
| 國立交通大學 |
2014-12-08T15:10:35Z |
Improved RF Power Performance in a 0.18-mu m MOSFET Which Uses an Asymmetric Drain Design
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Chang, T.; Kao, H. L.; McAlister, S. P.; Horng, K. Y.; Chin, Albert |
| 國立交通大學 |
2014-12-08T15:10:31Z |
A flexible organic pentacene nonvolatile memory based on high-kappa dielectric layers
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Chang, Ming-Feng; Lee, Po-Tsung; McAlister, S. P.; Chin, Albert |
| 國立交通大學 |
2014-12-08T15:10:04Z |
Small-Subthreshold-Swing and Low-Voltage Flexible Organic Thin-Film Transistors Which Use HfLaO as the Gate Dielectric
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Chang, M. F.; Lee, P. T.; McAlister, S. P.; Chin, Albert |
| 國立交通大學 |
2014-12-08T15:09:24Z |
Very low V(t) [Ir-Hf]/HfLaO CMOS using novel self-aligned low temperature shallow junctions
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Cheng, C. F.; Wu, C. H.; Su, N. C.; Wang, S. J.; McAlister, S. P.; Chin, Albert |
| 國立交通大學 |
2014-12-08T15:02:00Z |
A CMOS-Compatible, High RF Power, Asymmetric-LDD MOSFET with Excellent Linearity
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Chang, T.; Kao, H. L.; Chen, Y. J.; Liu, S. L.; McAlister, S. P.; Chin, Albert |
| 國立成功大學 |
2007-12 |
HtLaON n-MOSFETs using a low work function HfSix gate
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Cheng, C. F.; Wu, C. H.; Su, N. C.; Wang, Shui-Jinn; McAlister, S. P.; Chin, Albert |
| 國立成功大學 |
2006-02 |
High work function IrxSi gates on HfAlON p-MOSFETs
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Wu, C. H.; Yu, D. S.; Chin, Albert; Wang, Shui-Jinn; Li, M. F.; Zhu, C.; Hung, B. E.; McAlister, S. P. |
| 國立成功大學 |
2006 |
A quantum trap MONOS memory device using AlN
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Lai, C. H.; Wu, C. H.; Chin, Albert; Wang, Shui-Jinn; McAlister, S. P. |
顯示項目 11-23 / 23 (共1頁)
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