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Showing items 1-10 of 32 (4 Page(s) Totally)
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| 國立交通大學 |
2014-12-08T15:40:20Z |
High-performance microwave coplanar bandpass and bandstop filters on Si substrates
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Chan, KT; Chin, A; Li, MF; Kwong, DL; McAlister, SP; Duh, DS; Lin, WJ; Chang, CY |
| 國立交通大學 |
2014-12-08T15:39:52Z |
Device level characterization for energy bandgap of strain-relaxed SiGe and oxide/SiGe barrier height
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Huang, CH; Yu, DS; Chin, A; Chen, WJ; McAlister, SP |
| 國立交通大學 |
2014-12-08T15:39:51Z |
Light emission near 1.3 mu m using ITO-Al2O3-Si0.3Ge0.7-Si tunnel diodes
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Lin, CY; Chin, A; Hou, YT; Li, MF; McAlister, SP; Kwong, DL |
| 國立交通大學 |
2014-12-08T15:38:31Z |
High performance CPW and microstrip ring resonators on silicon substrates
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Chen, CC; Hung, BF; Chin, A; McAlister, SP |
| 國立交通大學 |
2014-12-08T15:37:26Z |
High-performance bulk and thin-film microstrip transmission lines on VLSI-standard Si substrates
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Chen, CC; Hung, BF; Chin, A; McAlister, SP |
| 國立交通大學 |
2014-12-08T15:37:03Z |
Reducing AC power consumption by three-dimensional integration of Ge-on-insulator CMOS on 1-poly-6-metal 0.18 mu m Si MOSFETs
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Yu, DS; Liao, CC; Chen, CC; Lee, CF; Cheng, CF; Chin, A; McAlister, SP |
| 國立交通大學 |
2014-12-08T15:36:58Z |
The potential of functional scaling
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Chin, A; McAlister, SP |
| 國立交通大學 |
2014-12-08T15:34:46Z |
Three-dimensional metal gate-high-kappa-GOI CMOSFETs on 1-poly-6-metal 0.18-mu m Si devices
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Yu, DS; Chin, A; Liao, CC; Lee, CF; Cheng, CF; Li, MF; Yoo, WJ; McAlister, SP |
| 國立交通大學 |
2014-12-08T15:26:18Z |
RF passive devices on Si with excellent performance close to ideal devices designed by electro-magnetic simulation
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Chin, A; Chan, KT; Huang, CH; Chen, C; Liang, V; Chen, JK; Chien, SC; Sung, SW; Duh, DS; Lin, WJ; Zhu, CX; Li, MF; McAlister, SP; Kwong, DL |
| 國立交通大學 |
2014-12-08T15:26:09Z |
Low RF loss and noise of transmission lines on Si substrates using an improved ion implantation process
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Chan, KT; Chin, A; McAlister, SP; Chang, CY; Tseng, C; Liang, V; Chen, JK; Chien, SC; Duh, DS; Lin, WJ |
Showing items 1-10 of 32 (4 Page(s) Totally)
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