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"mcalister sp"的相關文件
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| 國立交通大學 |
2014-12-08T15:40:20Z |
High-performance microwave coplanar bandpass and bandstop filters on Si substrates
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Chan, KT; Chin, A; Li, MF; Kwong, DL; McAlister, SP; Duh, DS; Lin, WJ; Chang, CY |
| 國立交通大學 |
2014-12-08T15:39:52Z |
Device level characterization for energy bandgap of strain-relaxed SiGe and oxide/SiGe barrier height
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Huang, CH; Yu, DS; Chin, A; Chen, WJ; McAlister, SP |
| 國立交通大學 |
2014-12-08T15:39:51Z |
Light emission near 1.3 mu m using ITO-Al2O3-Si0.3Ge0.7-Si tunnel diodes
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Lin, CY; Chin, A; Hou, YT; Li, MF; McAlister, SP; Kwong, DL |
| 國立交通大學 |
2014-12-08T15:38:31Z |
High performance CPW and microstrip ring resonators on silicon substrates
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Chen, CC; Hung, BF; Chin, A; McAlister, SP |
| 國立交通大學 |
2014-12-08T15:37:26Z |
High-performance bulk and thin-film microstrip transmission lines on VLSI-standard Si substrates
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Chen, CC; Hung, BF; Chin, A; McAlister, SP |
| 國立交通大學 |
2014-12-08T15:37:03Z |
Reducing AC power consumption by three-dimensional integration of Ge-on-insulator CMOS on 1-poly-6-metal 0.18 mu m Si MOSFETs
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Yu, DS; Liao, CC; Chen, CC; Lee, CF; Cheng, CF; Chin, A; McAlister, SP |
| 國立交通大學 |
2014-12-08T15:36:58Z |
The potential of functional scaling
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Chin, A; McAlister, SP |
| 國立交通大學 |
2014-12-08T15:34:46Z |
Three-dimensional metal gate-high-kappa-GOI CMOSFETs on 1-poly-6-metal 0.18-mu m Si devices
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Yu, DS; Chin, A; Liao, CC; Lee, CF; Cheng, CF; Li, MF; Yoo, WJ; McAlister, SP |
| 國立交通大學 |
2014-12-08T15:26:18Z |
RF passive devices on Si with excellent performance close to ideal devices designed by electro-magnetic simulation
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Chin, A; Chan, KT; Huang, CH; Chen, C; Liang, V; Chen, JK; Chien, SC; Sung, SW; Duh, DS; Lin, WJ; Zhu, CX; Li, MF; McAlister, SP; Kwong, DL |
| 國立交通大學 |
2014-12-08T15:26:09Z |
Low RF loss and noise of transmission lines on Si substrates using an improved ion implantation process
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Chan, KT; Chin, A; McAlister, SP; Chang, CY; Tseng, C; Liang, V; Chen, JK; Chien, SC; Duh, DS; Lin, WJ |
| 國立交通大學 |
2014-12-08T15:25:47Z |
A tunable and program-erasable capacitor on Si with excellent tuning memory
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Lai, CH; Lee, CF; Chin, A; Zhu, C; Li, MF; McAlister, SP; Kwong, DL |
| 國立交通大學 |
2014-12-08T15:25:43Z |
3D GOI CMOSFETs with novel IrO2(Hf) dual gates and high-kappa dielectric on 1P6M-0.18 mu m-CMOS
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Yu, DS; Chin, A; Laio, CC; Lee, CF; Cheng, CF; Chen, WJ; Zhu, C; Li, MF; Yoo, WJ; McAlister, SP; Kwong, DL |
| 國立交通大學 |
2014-12-08T15:25:27Z |
Novel SiO2/AlN/HfAlO/IrO2 memory with fast erase, large triangle V-th and good retention
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Lai, CH; Chin, A; Chiang, KC; Yoo, WJ; Cheng, CF; McAlister, SP; Chi, CC; Wu, P |
| 國立交通大學 |
2014-12-08T15:25:25Z |
Very high density RF MIM capacitor compatible with VLSI
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Chiang, KC; Lai, CH; Chin, A; Kao, HL; McAlister, SP; Chi, CC |
| 國立交通大學 |
2014-12-08T15:25:25Z |
Low noise and high gain RF MOSFETs on plastic substrates
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Kao, HL; Chin, A; Huang, CC; Hung, BF; Chiang, KC; Lai, ZM; McAlister, SP; Chi, CC |
| 國立交通大學 |
2014-12-08T15:25:25Z |
Modeling RF MOSFETs after electrical stress using low-noise microstrip line layout
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Kao, HL; Chin, A; Lai, JM; Lee, CF; Chiang, KC; McAlister, SP |
| 國立交通大學 |
2014-12-08T15:25:15Z |
Physics and modeling of Ge-on-Insulator MOSFETs
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Chin, A; Kao, HL; Tseng, YY; Yu, DS; Chen, CC; McAlister, SP; Chi, CC |
| 國立交通大學 |
2014-12-08T15:25:11Z |
Low voltage high speed SiO(2)/AlGaN/AlLaO(3)/TaN memory with good retention
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Chin, A; Laio, CC; Chen, C; Chiang, KC; Yu, DS; Yoo, WJ; Samudra, GS; Wang, T; Hsieh, IJ; McAlister, SP; Chi, CC |
| 國立交通大學 |
2014-12-08T15:25:11Z |
Lanthanide and Ir-based dual metal-gate/HfAlON CMOS with large work-function difference
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Yu, DS; Chin, A; Wu, CH; Li, MF; Zhu, C; Wang, SJ; Yoo, WJ; Hung, BF; McAlister, SP |
| 國立交通大學 |
2014-12-08T15:19:37Z |
A novel program-erasable high-(K) A1N-Si MIS capacitor
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Lai, CH; Chin, A; Hung, BF; Cheng, CF; Yoo, WJ; Li, MF; Zhu, CX; McAlister, SP; Kwong, DL |
| 國立交通大學 |
2014-12-08T15:18:59Z |
High-performance poly-silicon TFTs incorporating LaAlO3 as the gate dielectric
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Hung, BF; Chiang, KC; Huang, CC; Chin, A; McAlister, SP |
| 國立交通大學 |
2014-12-08T15:18:59Z |
The effect of IrO2-IrO2-Hf-LaAlO3 gate dielectric on the bias-temperature instability of 3-d GOI CMOSFETs
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Yu, DS; Liao, CC; Cheng, CF; Chin, A; Li, MF; McAlister, SP |
| 國立交通大學 |
2014-12-08T15:18:50Z |
High-kappa Ir/TiTaO/TaN capacitors suitable for analog IC applications
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Chiang, KC; Huang, CC; Chin, A; Chen, WJ; McAlister, SP; Chiu, HF; Chen, JR; Chi, CC |
| 國立交通大學 |
2014-12-08T15:18:49Z |
Low noise RF MOSFETs on flexible plastic substrates
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Kao, HL; Chin, A; Hung, BF; Lee, CF; Lai, JM; McAlister, SP; Sarnudra, GS; Yoo, WJ; Chi, CC |
| 國立交通大學 |
2014-12-08T15:18:24Z |
Broad-spectrum light emission at microscopic breakdown sites in metal-insulator-silicon tunnel diodes
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Mihaychuk, JG; Denhoff, MW; McAlister, SP; McKinnon, WR; Chin, A |
| 國立交通大學 |
2014-12-08T15:18:20Z |
Very high-density (23 fF/mu m(2)) RF MIM capacitors using high-k TaTiO as the dielectric
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Chiang, KC; Lai, CH; Chin, A; Wang, TJ; Chiu, HF; Chen, JR; McAlister, SP; Chi, CC |
| 國立交通大學 |
2014-12-08T15:18:09Z |
Very low noise RIF nMOSFETs on plastic by substrate thinning and wafer transfer
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Kao, HL; Hung, BF; Chin, A; Lai, JM; Lee, CF; McAlister, SP; Chi, CC |
| 國立交通大學 |
2014-12-08T15:17:43Z |
A quantum trap MONOS memory device using AlN
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Lai, CH; Wu, CH; Chin, A; Wang, SJ; McAlister, SP |
| 國立交通大學 |
2014-12-08T15:17:29Z |
High work function IrxSi gates on HfAlON p-MOSFETs
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Wu, CH; Yu, DS; Chin, A; Wang, SJ; Li, MF; Zhu, C; Hung, BE; McAlister, SP |
| 國立交通大學 |
2014-12-08T15:16:56Z |
AC power loss and signal coupling in very large scale integration backend interconnects
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Chen, CC; Kao, HL; Liao, CC; Chin, A; McAlister, SP; Chi, CC |
| 國立交通大學 |
2014-12-08T15:16:53Z |
Electrical-stress effects and device modeling of 0.18-mu m RF MOSFETs
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Kao, HL; Chin, A; Liao, CC; Chen, CC; McAlister, SP; Chi, CC |
| 國立交通大學 |
2014-12-08T15:16:41Z |
Performance and potential of germanium on insulator field-effect transistors
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Yu, DS; Kao, HL; Chin, A; McAlister, SP |
顯示項目 1-32 / 32 (共1頁)
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