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显示项目 11-32 / 32 (共1页)
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机构 日期 题名 作者
國立交通大學 2014-12-08T15:25:47Z A tunable and program-erasable capacitor on Si with excellent tuning memory Lai, CH; Lee, CF; Chin, A; Zhu, C; Li, MF; McAlister, SP; Kwong, DL
國立交通大學 2014-12-08T15:25:43Z 3D GOI CMOSFETs with novel IrO2(Hf) dual gates and high-kappa dielectric on 1P6M-0.18 mu m-CMOS Yu, DS; Chin, A; Laio, CC; Lee, CF; Cheng, CF; Chen, WJ; Zhu, C; Li, MF; Yoo, WJ; McAlister, SP; Kwong, DL
國立交通大學 2014-12-08T15:25:27Z Novel SiO2/AlN/HfAlO/IrO2 memory with fast erase, large triangle V-th and good retention Lai, CH; Chin, A; Chiang, KC; Yoo, WJ; Cheng, CF; McAlister, SP; Chi, CC; Wu, P
國立交通大學 2014-12-08T15:25:25Z Very high density RF MIM capacitor compatible with VLSI Chiang, KC; Lai, CH; Chin, A; Kao, HL; McAlister, SP; Chi, CC
國立交通大學 2014-12-08T15:25:25Z Low noise and high gain RF MOSFETs on plastic substrates Kao, HL; Chin, A; Huang, CC; Hung, BF; Chiang, KC; Lai, ZM; McAlister, SP; Chi, CC
國立交通大學 2014-12-08T15:25:25Z Modeling RF MOSFETs after electrical stress using low-noise microstrip line layout Kao, HL; Chin, A; Lai, JM; Lee, CF; Chiang, KC; McAlister, SP
國立交通大學 2014-12-08T15:25:15Z Physics and modeling of Ge-on-Insulator MOSFETs Chin, A; Kao, HL; Tseng, YY; Yu, DS; Chen, CC; McAlister, SP; Chi, CC
國立交通大學 2014-12-08T15:25:11Z Low voltage high speed SiO(2)/AlGaN/AlLaO(3)/TaN memory with good retention Chin, A; Laio, CC; Chen, C; Chiang, KC; Yu, DS; Yoo, WJ; Samudra, GS; Wang, T; Hsieh, IJ; McAlister, SP; Chi, CC
國立交通大學 2014-12-08T15:25:11Z Lanthanide and Ir-based dual metal-gate/HfAlON CMOS with large work-function difference Yu, DS; Chin, A; Wu, CH; Li, MF; Zhu, C; Wang, SJ; Yoo, WJ; Hung, BF; McAlister, SP
國立交通大學 2014-12-08T15:19:37Z A novel program-erasable high-(K) A1N-Si MIS capacitor Lai, CH; Chin, A; Hung, BF; Cheng, CF; Yoo, WJ; Li, MF; Zhu, CX; McAlister, SP; Kwong, DL
國立交通大學 2014-12-08T15:18:59Z High-performance poly-silicon TFTs incorporating LaAlO3 as the gate dielectric Hung, BF; Chiang, KC; Huang, CC; Chin, A; McAlister, SP
國立交通大學 2014-12-08T15:18:59Z The effect of IrO2-IrO2-Hf-LaAlO3 gate dielectric on the bias-temperature instability of 3-d GOI CMOSFETs Yu, DS; Liao, CC; Cheng, CF; Chin, A; Li, MF; McAlister, SP
國立交通大學 2014-12-08T15:18:50Z High-kappa Ir/TiTaO/TaN capacitors suitable for analog IC applications Chiang, KC; Huang, CC; Chin, A; Chen, WJ; McAlister, SP; Chiu, HF; Chen, JR; Chi, CC
國立交通大學 2014-12-08T15:18:49Z Low noise RF MOSFETs on flexible plastic substrates Kao, HL; Chin, A; Hung, BF; Lee, CF; Lai, JM; McAlister, SP; Sarnudra, GS; Yoo, WJ; Chi, CC
國立交通大學 2014-12-08T15:18:24Z Broad-spectrum light emission at microscopic breakdown sites in metal-insulator-silicon tunnel diodes Mihaychuk, JG; Denhoff, MW; McAlister, SP; McKinnon, WR; Chin, A
國立交通大學 2014-12-08T15:18:20Z Very high-density (23 fF/mu m(2)) RF MIM capacitors using high-k TaTiO as the dielectric Chiang, KC; Lai, CH; Chin, A; Wang, TJ; Chiu, HF; Chen, JR; McAlister, SP; Chi, CC
國立交通大學 2014-12-08T15:18:09Z Very low noise RIF nMOSFETs on plastic by substrate thinning and wafer transfer Kao, HL; Hung, BF; Chin, A; Lai, JM; Lee, CF; McAlister, SP; Chi, CC
國立交通大學 2014-12-08T15:17:43Z A quantum trap MONOS memory device using AlN Lai, CH; Wu, CH; Chin, A; Wang, SJ; McAlister, SP
國立交通大學 2014-12-08T15:17:29Z High work function IrxSi gates on HfAlON p-MOSFETs Wu, CH; Yu, DS; Chin, A; Wang, SJ; Li, MF; Zhu, C; Hung, BE; McAlister, SP
國立交通大學 2014-12-08T15:16:56Z AC power loss and signal coupling in very large scale integration backend interconnects Chen, CC; Kao, HL; Liao, CC; Chin, A; McAlister, SP; Chi, CC
國立交通大學 2014-12-08T15:16:53Z Electrical-stress effects and device modeling of 0.18-mu m RF MOSFETs Kao, HL; Chin, A; Liao, CC; Chen, CC; McAlister, SP; Chi, CC
國立交通大學 2014-12-08T15:16:41Z Performance and potential of germanium on insulator field-effect transistors Yu, DS; Kao, HL; Chin, A; McAlister, SP

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