| 國立成功大學 |
2022 |
First Demonstration of Heterogeneous IGZO/Si CFET Monolithic 3-D Integration with Dual Work Function Gate for Ultralow-Power SRAM and RF Applications
|
Chang, S.-W.;Lu, T.-H.;Yang, C.-Y.;Yeh, C.-J.;Huang, M.-K.;Meng, C.-F.;Chen, P.-J.;Chang, T.-H.;Chang, Y.-S.;Jhu, Jhu J.-W.;Hong, T.-C.;Ke, C.-C.;Yu, X.-R.;Lu, W.-H.;Baig, M.A.;Cho, T.-C.;Sung, P.-J.;Su, C.-J.;Hsueh, F.-K.;Chen, B.-Y.;Hu, Hu H.-H.;Wu, C.-T.;Lin, K.-L.;Ma, W.C.-Y.;Lu, D.D.;Kao, Kao K.-H.;Lee, Y.-J.;Lin, C.-L.;Huang, K.-P.;Chen, K.-M.;Li, Y.;Samukawa, Samukawa S.;Chao, T.-S.;Huang, G.-W.;Wu, Wu W.-F.;Lee, W.-H.;Li, J.-Y.;Shieh, J.-M.;Tarng, J.-H.;Wang, Y.-H.;Yeh, W.-K. |
