| 國立交通大學 |
2014-12-08T15:26:10Z |
A high isolation CMFB downconversion micromixer using 0. 18-urn deep N-well CMOS technology
|
Meng, CC; Xu, SK; Wu, TH; Chao, MH; Huang, GW |
| 國立交通大學 |
2014-12-08T15:26:10Z |
A fully integrated 5.2 GHz GaInP/GaAs HBT upconversion micromixer with output LC current combiner and oscillator
|
Meng, CC; Hsu, SK; Peng, AS; Wen, SY; Huang, GW |
| 國立交通大學 |
2014-12-08T15:26:09Z |
A fully integrated 5.2 GHz GaInP/GaAs HBT upconversion micromixer with output LC current combiner and oscillator
|
Meng, CC; Hsu, SK; Peng, AS; Wen, SY; Huang, GW |
| 國立交通大學 |
2014-12-08T15:26:09Z |
A high isolation CMFB downconversion micromixer using 0.18-mu m deep N-well CMOS technology
|
Meng, CC; Xu, SK; Wu, TH; Chao, MH; Huang, GW |
| 國立交通大學 |
2014-12-08T15:25:25Z |
A fully integrated 5.2 GHz SiGe HBT upconversion micromixer using lumped balun and LC current combiner
|
Wu, TH; Meng, CC; Huang, GW |
| 國立交通大學 |
2014-12-08T15:25:25Z |
Linearity improvement for power MESFET devices using source inductive feedback and input impedance mismatch
|
Meng, CC; Wang, W |
| 國立交通大學 |
2014-12-08T15:19:20Z |
A 0.18-mu m CMOS CMFB downconversion micromixer with deep N-well technology for LO-RF and LO-IF isolation improvements
|
Meng, CC; Hsu, SK; Wu, TH; Huang, GW |
| 國立交通大學 |
2014-12-08T15:19:07Z |
A monolithic 5.2-GHz single-ended input and single-ended output GaInP/GaAs HBT upconversion Gilbert mixer with integrated oscillator
|
Meng, CC; Hsu, SK; Huang, GW |
| 國立交通大學 |
2014-12-08T15:19:02Z |
Determining GaInP/GaAs HBT device structure by DC measurements on a two-emitter HBT device and high frequency transit time measurements
|
Meng, CC; Tsou, BC; Tseng, SC |
| 國立交通大學 |
2014-12-08T15:18:53Z |
A 5.7 GHz Gilbert upconversion mixer with an LC current combiner output using 0.35 mu m SiGe HBT technology
|
Wu, TH; Meng, CC; Huang, GW |
| 國立交通大學 |
2014-12-08T15:18:38Z |
5.4GHz-127 dBc/Hz at 1MHz GaInP/GaAs HBT quadrature VCO using stacked transformers
|
Meng, CC; Chen, CH; Chang, YW; Huang, GW |
| 國立交通大學 |
2014-12-08T15:18:29Z |
Analysis of DC characteristics and small signal equivalent circuit parameters of GaAs metal-semiconductor field effect transistors with different gate lengths and different gate contours by two-dimensional device simulations
|
Meng, CC; Su, JY; Yang, SM |
| 國立交通大學 |
2014-12-08T15:18:20Z |
Compact 5.2-GHz GaInP/GaAs HBT gilbert upconverter using lumped rat-race hybrid and current combiner
|
Meng, CC; Wu, TH; Lin, MC |
| 國立交通大學 |
2014-12-08T15:17:00Z |
The port-to-port isolation of the downconversion P-type micromixer using different N-well topologies
|
Tseng, SC; Meng, CC; Li, YH; Huang, GW |
| 國立交通大學 |
2014-12-08T15:17:00Z |
The effect of selectively and fully ion-implanted collector on RF characteristics of BJT devices
|
Meng, CC; Su, JY; Tsou, BC; Huang, GW |
| 國立交通大學 |
2014-12-08T15:16:53Z |
A modified HICUM model for GaInP/GaAs HBT devices
|
Tseng, SC; Meng, CC; Chen, WY; Su, JY |
| 國立交通大學 |
2014-12-08T15:16:39Z |
High-linear-power MESFET devices using source-degeneration inductance and input-impedance mismatch
|
Meng, CC; Wang, W |
| 國立交通大學 |
2014-12-08T15:16:31Z |
4.9-GHz low-phase-noise transformer-based superharmonic-coupled GaInP/GaAs HBT QVCO
|
Meng, CC; Chang, YW; Tseng, SC |
| 國立交通大學 |
2014-12-08T15:16:06Z |
5.2-GHz GaInP/GaAs HBT cascode LNA with 5.5 dB gain enhancement using inter-stage LC matching
|
Meng, CC; Jhong, JC |
| 臺北醫學大學 |
2007 |
The results of radiofrequency catheter ablation of supraventricular tachycardia in children.
|
陳亦仁; Lee PC; Hwang B; Chen SA; Tai CG; Chen YJ; Chiang CE; Meng CC |
