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Institution Date Title Author
國立交通大學 2014-12-08T15:24:59Z Twin-GD: A new twin gated-diode measurement for the interface characterization of ultra-thin gate oxide MOSFET's with EOT down to 1nm Lee, G. D.; Chung, S. S.; Mao, A. Y.; Lin, W. M.; Yang, C. W.; Hsieh, Y. S.; Chu, K. T.; Cheng, L. W.; Tai, H.; Hsu, L. T.; Lee, C. R.; Meng, H. L.; Tsai, C. T.; Ma, G. H.; Chien, S. C.; Sun, S. W.

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