臺灣學術機構典藏系統 (Taiwan Academic Institutional Repository, TAIR)

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機構	日期	題名	作者
臺大學術典藏	2022-09-21T23:30:31Z	Cryogenic Si/SiGe Heterostructure Flash Memory Devices	Hou, Wei Chih; Hsu, Nai Wen; Wang, Tz Ming; Liu, Chia You; Kao, Hsiang Shun; MIIN-JANG CHEN; JIUN-YUN LI
臺大學術典藏	2022-09-21T23:30:31Z	Ferroelectric ZrO2 ultrathin films on silicon for metal-ferroelectric-semiconductor capacitors and transistors	Jiang, Yu Sen; Huang, Kuei Wen; Yi, Sheng Han; Wang, Chin I.; Chang, Teng Jan; Kao, Wei Chung; Wang, Chun Yuan; Yin, Yu Tung; TZONG-LIN JAY SHIEH; MIIN-JANG CHEN
臺大學術典藏	2022-06-21T23:23:53Z	Enhancement of energy storage for electrostatic supercapacitors through built-in electric field engineering	Yi, Sheng Han; Chan, Yu Chen; Mo, Chi Lin; HSIN-CHIH LIN; MIIN-JANG CHEN
臺大學術典藏	2022-06-21T23:23:51Z	Large area and rapid electron beam annealing for high-quality epitaxial GaN layer	Lee, Wei Hao; Jhong, Fong Jyun; Yin, Yu Tung; Chou, Chun Yi; Shyue, Jing Jong; MIIN-JANG CHEN
臺大學術典藏	2022-04-21T23:17:25Z	Ferroelectric enhancement of Al-doped HfO2 thin films by rapid electron beam annealing in a low thermal budget	Wang, Ting Yun; Kao, Wei Chung; Yin, Yu Tung; TZONG-LIN JAY SHIEH; MIIN-JANG CHEN
臺大學術典藏	2022-04-21T23:17:24Z	Atomic tailoring of low-thermal-budget and nearly wake-up-free ferroelectric Hf0.5Zr0.5O2 nanoscale thin films by atomic layer annealing	Chang, Teng Jan; Jiang, Yu Sen; Yi, Sheng Han; Chou, Chun Yi; Wang, Chin I.; HSIN-CHIH LIN; MIIN-JANG CHEN
臺大學術典藏	2022-04-21T23:17:24Z	Conformal atomic layer etching for Ge based on sacrificial oxide with higher Gibbs free energy of formation	Ling, Chen Hsiang; Chou, Chun Yi; Chung, Tsai Fu; Shyue, Jing Jong; JER-REN YANG; MIIN-JANG CHEN
臺大學術典藏	2022-03-22T15:04:52Z	Wake-up free Hf0.5Zr0.5O2 thin film with enhanced ferroelectricity and reliability synthesized by atomic layer crystallization induced by substrate biasing	Chou, Chun Yi; Chen, Hsing Yang; Jiang, Yu Sen; HSIN-CHIH LIN; MIIN-JANG CHEN
臺大學術典藏	2022-03-22T08:30:48Z	Atomic layer deposited TiN capping layer for sub-10 nm ferroelectric Hf0.5Zr0.5O2 with large remnant polarization and low thermal budget	Wang C.-I;Wang C.-Y;Chang T.-J;Jiang Y.-S;Shyue J.-J;Lin H.-C;Chen M.-J.; Wang C.-I; Wang C.-Y; Chang T.-J; Jiang Y.-S; Shyue J.-J; Lin H.-C; Chen M.-J.; MIIN-JANG CHEN
臺大學術典藏	2022-03-22T08:30:48Z	Atomic layer annealing for modulation of the work function of TiN metal gate for n-type MOS devices	Wang C.-Y;Chou C.-Y;Shiue H.-F;Chen H.-Y;Ling C.-H;Shyue J.-J;Chen M.-J.; Wang C.-Y; Chou C.-Y; Shiue H.-F; Chen H.-Y; Ling C.-H; Shyue J.-J; Chen M.-J.; MIIN-JANG CHEN
臺大學術典藏	2022-03-22T08:30:47Z	Enhancement of the anticoagulant capacity of polyvinyl chloride tubing for cardiopulmonary bypass circuit using aluminum oxide nanoscale coating applied through atomic layer deposition	Wang C.-C;Wang L.-C;Yang K.-C;Chen M.-J;Lin H.-C;Han Y.-Y.; Wang C.-C; Wang L.-C; Yang K.-C; Chen M.-J; Lin H.-C; Han Y.-Y.; MIIN-JANG CHEN
臺大學術典藏	2022-03-22T08:30:47Z	Atomic Layer Nucleation Engineering: Inhibitor-Free Area-Selective Atomic Layer Deposition of Oxide and Nitride	Chou C.-Y;Lee W.-H;Chuu C.-P;Chen T.-A;Hou C.-H;Yin Y.-T;Wang T.-Y;Shyue J.-J;Li L.-J;Chen M.-J.; Chou C.-Y; Lee W.-H; Chuu C.-P; Chen T.-A; Hou C.-H; Yin Y.-T; Wang T.-Y; Shyue J.-J; Li L.-J; Chen M.-J.; MIIN-JANG CHEN
臺大學術典藏	2022-03-22T08:30:47Z	Effect of atomic layer plasma treatment on TALD-ZrO2 film to improve the corrosion protection of Mg-Ca alloy	Lin P.C;Lin K.F;Chiu C;Semenov V.I;Lin H.C;Chen M.J.; Lin P.C; Lin K.F; Chiu C; Semenov V.I; Lin H.C; Chen M.J.; MIIN-JANG CHEN
臺大學術典藏	2022-03-22T08:30:46Z	Atomic layer deposited TiN capping layer for sub-10 nm ferroelectric Hf0.5Zr0.5O2 with large remnant polarization and low thermal budget	Wang C.-I;Wang C.-Y;Chang T.-J;Jiang Y.-S;Shyue J.-J;Lin H.-C;Chen M.-J.; Wang C.-I; Wang C.-Y; Chang T.-J; Jiang Y.-S; Shyue J.-J; Lin H.-C; Chen M.-J.; MIIN-JANG CHEN
臺大學術典藏	2022-03-22T08:30:46Z	Improvement of Corrosion Resistance and Biocompatibility of Biodegradable Mg–Ca Alloy by ALD HfZrO2 Film	Lin P.-C;Lin K;Lin Y.-H;Yang K.-C;Semenov V.I;Lin H.-C;Chen M.-J.; Lin P.-C; Lin K; Lin Y.-H; Yang K.-C; Semenov V.I; Lin H.-C; Chen M.-J.; MIIN-JANG CHEN
臺大學術典藏	2022-03-22T08:30:46Z	Evolution of pronounced ferroelectricity in Hf0.5Zr0.5O2thin films scaled down to 3 nm	Wang C.-I;Chen H.-Y;Wang C.-Y;Chang T.-J;Jiang Y.-S;Chang C.-S;Chen M.-J.; Wang C.-I; Chen H.-Y; Wang C.-Y; Chang T.-J; Jiang Y.-S; Chang C.-S; Chen M.-J.; MIIN-JANG CHEN
臺大學術典藏	2022-03-22T08:30:46Z	Atomic layer annealing for modulation of the work function of TiN metal gate for n-type MOS devices	Wang C.-Y;Chou C.-Y;Shiue H.-F;Chen H.-Y;Ling C.-H;Shyue J.-J;Chen M.-J.; Wang C.-Y; Chou C.-Y; Shiue H.-F; Chen H.-Y; Ling C.-H; Shyue J.-J; Chen M.-J.; MIIN-JANG CHEN
臺大學術典藏	2022-03-22T08:30:45Z	Enhancement of the anticoagulant capacity of polyvinyl chloride tubing for cardiopulmonary bypass circuit using aluminum oxide nanoscale coating applied through atomic layer deposition	Wang C.-C;Wang L.-C;Yang K.-C;Chen M.-J;Lin H.-C;Han Y.-Y.; Wang C.-C; Wang L.-C; Yang K.-C; Chen M.-J; Lin H.-C; Han Y.-Y.; MIIN-JANG CHEN
臺大學術典藏	2022-03-22T08:30:45Z	Effect of atomic layer plasma treatment on TALD-ZrO2 film to improve the corrosion protection of Mg-Ca alloy	Lin P.C;Lin K.F;Chiu C;Semenov V.I;Lin H.C;Chen M.J.; Lin P.C; Lin K.F; Chiu C; Semenov V.I; Lin H.C; Chen M.J.; MIIN-JANG CHEN
臺大學術典藏	2022-03-22T08:30:45Z	Modulation of zirconia ferroelectricity via crystal orientation of PT electrode	Zhuang Y.-X;Shieh J;Chen M.-J;Lin H.-C.; Zhuang Y.-X; Shieh J; Chen M.-J; Lin H.-C.; MIIN-JANG CHEN
臺大學術典藏	2022-03-22T08:30:45Z	Atomic Layer Nucleation Engineering: Inhibitor-Free Area-Selective Atomic Layer Deposition of Oxide and Nitride	Chou C.-Y;Lee W.-H;Chuu C.-P;Chen T.-A;Hou C.-H;Yin Y.-T;Wang T.-Y;Shyue J.-J;Li L.-J;Chen M.-J.; Chou C.-Y; Lee W.-H; Chuu C.-P; Chen T.-A; Hou C.-H; Yin Y.-T; Wang T.-Y; Shyue J.-J; Li L.-J; Chen M.-J.; MIIN-JANG CHEN
臺大學術典藏	2022-03-22T08:30:45Z	Suppression of short channel effects in ferroelectric Si junctionless transistors with a sub-10 nm gate length defined by helium ion beam lithography	Chang T.-J;Wang T.-Y;Wang C.-I;Huang Z.-D;Jiang Y.-S;Chou C.-Y;Kao W.-C;Chen M.-J.; Chang T.-J; Wang T.-Y; Wang C.-I; Huang Z.-D; Jiang Y.-S; Chou C.-Y; Kao W.-C; Chen M.-J.; MIIN-JANG CHEN
臺大學術典藏	2022-03-22T08:30:44Z	Evolution of pronounced ferroelectricity in Hf0.5Zr0.5O2thin films scaled down to 3 nm	Wang C.-I;Chen H.-Y;Wang C.-Y;Chang T.-J;Jiang Y.-S;Chang C.-S;Chen M.-J.; Wang C.-I; Chen H.-Y; Wang C.-Y; Chang T.-J; Jiang Y.-S; Chang C.-S; Chen M.-J.; MIIN-JANG CHEN
臺大學術典藏	2022-03-22T08:30:44Z	Improvement of Corrosion Resistance and Biocompatibility of Biodegradable Mg–Ca Alloy by ALD HfZrO2 Film	Lin P.-C;Lin K;Lin Y.-H;Yang K.-C;Semenov V.I;Lin H.-C;Chen M.-J.; Lin P.-C; Lin K; Lin Y.-H; Yang K.-C; Semenov V.I; Lin H.-C; Chen M.-J.; MIIN-JANG CHEN
臺大學術典藏	2022-03-22T08:30:43Z	Suppression of short channel effects in ferroelectric Si junctionless transistors with a sub-10 nm gate length defined by helium ion beam lithography	Chang T.-J;Wang T.-Y;Wang C.-I;Huang Z.-D;Jiang Y.-S;Chou C.-Y;Kao W.-C;Chen M.-J.; Chang T.-J; Wang T.-Y; Wang C.-I; Huang Z.-D; Jiang Y.-S; Chou C.-Y; Kao W.-C; Chen M.-J.; MIIN-JANG CHEN
臺大學術典藏	2022-03-22T08:30:43Z	Modulation of zirconia ferroelectricity via crystal orientation of PT electrode	Zhuang Y.-X;Shieh J;Chen M.-J;Lin H.-C.; Zhuang Y.-X; Shieh J; Chen M.-J; Lin H.-C.; MIIN-JANG CHEN
臺大學術典藏	2022-03-22T08:27:46Z	Atomic Layer Nucleation Engineering: Inhibitor-Free Area-Selective Atomic Layer Deposition of Oxide and Nitride	Chou C.-Y;Lee W.-H;Chuu C.-P;Chen T.-A;Hou C.-H;Yin Y.-T;Wang T.-Y;Shyue J.-J;Li L.-J;Chen M.-J.; Chou C.-Y; Lee W.-H; Chuu C.-P; Chen T.-A; Hou C.-H; Yin Y.-T; Wang T.-Y; Shyue J.-J; Li L.-J; Chen M.-J.; MIIN-JANG CHEN
臺大學術典藏	2022-03-22T08:27:46Z	Atomic layer deposited TiN capping layer for sub-10 nm ferroelectric Hf0.5Zr0.5O2 with large remnant polarization and low thermal budget	Wang C.-I;Wang C.-Y;Chang T.-J;Jiang Y.-S;Shyue J.-J;Lin H.-C;Chen M.-J.; Wang C.-I; Wang C.-Y; Chang T.-J; Jiang Y.-S; Shyue J.-J; Lin H.-C; Chen M.-J.; MIIN-JANG CHEN
臺大學術典藏	2022-03-22T08:27:46Z	Atomic layer annealing for modulation of the work function of TiN metal gate for n-type MOS devices	Wang C.-Y;Chou C.-Y;Shiue H.-F;Chen H.-Y;Ling C.-H;Shyue J.-J;Chen M.-J.; Wang C.-Y; Chou C.-Y; Shiue H.-F; Chen H.-Y; Ling C.-H; Shyue J.-J; Chen M.-J.; MIIN-JANG CHEN
臺大學術典藏	2022-03-22T08:27:45Z	Enhancement of the anticoagulant capacity of polyvinyl chloride tubing for cardiopulmonary bypass circuit using aluminum oxide nanoscale coating applied through atomic layer deposition	Wang C.-C;Wang L.-C;Yang K.-C;Chen M.-J;Lin H.-C;Han Y.-Y.; Wang C.-C; Wang L.-C; Yang K.-C; Chen M.-J; Lin H.-C; Han Y.-Y.; MIIN-JANG CHEN
臺大學術典藏	2022-03-22T08:27:45Z	Effect of atomic layer plasma treatment on TALD-ZrO2 film to improve the corrosion protection of Mg-Ca alloy	Lin P.C;Lin K.F;Chiu C;Semenov V.I;Lin H.C;Chen M.J.; Lin P.C; Lin K.F; Chiu C; Semenov V.I; Lin H.C; Chen M.J.; MIIN-JANG CHEN
臺大學術典藏	2022-03-22T08:27:44Z	Evolution of pronounced ferroelectricity in Hf0.5Zr0.5O2thin films scaled down to 3 nm	Wang C.-I;Chen H.-Y;Wang C.-Y;Chang T.-J;Jiang Y.-S;Chang C.-S;Chen M.-J.; Wang C.-I; Chen H.-Y; Wang C.-Y; Chang T.-J; Jiang Y.-S; Chang C.-S; Chen M.-J.; MIIN-JANG CHEN
臺大學術典藏	2022-03-22T08:27:44Z	Modulation of zirconia ferroelectricity via crystal orientation of PT electrode	Zhuang Y.-X;Shieh J;Chen M.-J;Lin H.-C.; Zhuang Y.-X; Shieh J; Chen M.-J; Lin H.-C.; MIIN-JANG CHEN
臺大學術典藏	2022-03-22T08:27:44Z	Improvement of Corrosion Resistance and Biocompatibility of Biodegradable Mg–Ca Alloy by ALD HfZrO2 Film	Lin P.-C;Lin K;Lin Y.-H;Yang K.-C;Semenov V.I;Lin H.-C;Chen M.-J.; Lin P.-C; Lin K; Lin Y.-H; Yang K.-C; Semenov V.I; Lin H.-C; Chen M.-J.; MIIN-JANG CHEN
臺大學術典藏	2022-03-22T08:27:43Z	Suppression of short channel effects in ferroelectric Si junctionless transistors with a sub-10 nm gate length defined by helium ion beam lithography	Chang T.-J;Wang T.-Y;Wang C.-I;Huang Z.-D;Jiang Y.-S;Chou C.-Y;Kao W.-C;Chen M.-J.; Chang T.-J; Wang T.-Y; Wang C.-I; Huang Z.-D; Jiang Y.-S; Chou C.-Y; Kao W.-C; Chen M.-J.; MIIN-JANG CHEN
臺大學術典藏	2022-02-21T23:30:44Z	Improvement of Corrosion Resistance and Biocompatibility of Biodegradable Mg–Ca Alloy by ALD HfZrO2 Film	Lin, Pi Chen; Lin, Kaifan; Lin, Yu Hsuan; Yang, Kai Chiang; Semenov, Vladimir Ivanovitch; HSIN-CHIH LIN; MIIN-JANG CHEN
臺大學術典藏	2022-02-21T23:30:43Z	Atomic layer annealing for modulation of the work function of TiN metal gate for n-type MOS devices	Wang, Chun Yuan; Chou, Chun Yi; Shiue, Han Fang; Chen, Hsing Yang; Ling, Chen Hsiang; Shyue, Jing Jong; MIIN-JANG CHEN
臺大學術典藏	2022-01-03T08:01:07Z	Surface-enhanced Raman spectroscopy (SERS) of textured structures with anti-reflection by wet etching and island lithography	Hsin-Chia Ho; Bo-Kai Chao; Hsin-Hung Cheng; Li-Wei Nien; Miin-Jang Chen; Tadaaki Nagao; Jia-Han Li; Chun-Hway Hsueh*; JIA-HAN LI
臺大學術典藏	2021-11-21T23:18:56Z	Modulation of zirconia ferroelectricity via crystal orientation of PT electrode	Zhuang, Yong Xiang; TZONG-LIN JAY SHIEH; MIIN-JANG CHEN; HSIN-CHIH LIN
臺大學術典藏	2021-10-21T23:27:31Z	Evolution of pronounced ferroelectricity in Hf0.5Zr0.5O2thin films scaled down to 3 nm	Wang, Chin I.; Chen, Hsin Yang; Wang, Chun Yuan; Chang, Teng Jan; Jiang, Yu Sen; Chang, Chih Sheng; MIIN-JANG CHEN
臺大學術典藏	2021-09-21T23:19:32Z	Atomic layer deposited TiN capping layer for sub-10 nm ferroelectric Hf0.5Zr0.5O2 with large remnant polarization and low thermal budget	Wang, Chin I.; Wang, Chun Yuan; Chang, Teng Jan; Jiang, Yu Sen; Shyue, Jing Jong; HSIN-CHIH LIN; MIIN-JANG CHEN
臺大學術典藏	2021-09-14T23:18:44Z	Enhancement of the anticoagulant capacity of polyvinyl chloride tubing for cardiopulmonary bypass circuit using aluminum oxide nanoscale coating applied through atomic layer deposition	Wang, Chen Chie; Wang, Li Chun; Yang, Kai Chiang; MIIN-JANG CHEN; HSIN-CHIH LIN; YIN-YI HAN
臺大學術典藏	2021-08-21T23:58:56Z	Atomic Layer Nucleation Engineering: Inhibitor-Free Area-Selective Atomic Layer Deposition of Oxide and Nitride	Chou, Chun Yi; Lee, Wei Hao; Chuu, Chih Piao; Chen, Tse An; Hou, Cheng Hung; Yin, Yu Tung; Wang, Ting Yun; Shyue, Jing Jong; Li, Lain Jong; MIIN-JANG CHEN
臺大學術典藏	2021-08-21T23:58:56Z	Suppression of short channel effects in ferroelectric Si junctionless transistors with a sub-10 nm gate length defined by helium ion beam lithography	Chang, Teng Jan; Wang, Ting Yun; Wang, Chin I.; Huang, Zheng Da; Jiang, Yu Sen; Chou, Chun Yi; Kao, Wei Chung; MIIN-JANG CHEN
臺大學術典藏	2021-08-05T02:41:02Z	High- K Gate Dielectrics Treated with in Situ Atomic Layer Bombardment	Chang T.-J;Lee W.-H;Wang C.-I;Yi S.-H;Yin Y.-T;Lin H.-C;Chen M.-J.; Chang T.-J; Lee W.-H; Wang C.-I; Yi S.-H; Yin Y.-T; Lin H.-C; Chen M.-J.; MIIN-JANG CHEN
臺大學術典藏	2021-08-05T02:41:02Z	Atomic Layer Densification of AlN Passivation Layer on Epitaxial Ge for Enhancement of Reliability and Electrical Performance of High-K Gate Stacks	Wang C.-I;Chang T.-J;Yin Y.-T;Jiang Y.-S;Shyue J.-J;Chen M.-J.; Wang C.-I; Chang T.-J; Yin Y.-T; Jiang Y.-S; Shyue J.-J; Chen M.-J.; MIIN-JANG CHEN
臺大學術典藏	2021-08-05T02:41:01Z	Low-Temperature Physical Adsorption for the Nucleation of Sub-10 nm Al2O3Gate Stack on Top-Gated WS2Transistors	Lin Y.-S;Hoo J.-Y;Chung T.-F;Yang J.-R;Chen M.-J.; Lin Y.-S; Hoo J.-Y; Chung T.-F; Yang J.-R; Chen M.-J.; MIIN-JANG CHEN
臺大學術典藏	2021-08-05T02:41:01Z	Impact of a TiN Capping Layer on Phase Transformation and Capacitance Enhancement in ZrO2	Wang C.-Y;Wang C.-I;Yi S.-H;Chang T.-J;Chou C.-Y;Yin Y.-T;Lin H.-C;Chen M.-J.; Wang C.-Y; Wang C.-I; Yi S.-H; Chang T.-J; Chou C.-Y; Yin Y.-T; Lin H.-C; Chen M.-J.; MIIN-JANG CHEN
臺大學術典藏	2021-08-05T02:41:01Z	Operation bandwidth of negative capacitance characterized by the frequency response of capacitance magnification in ferroelectric/dielectric stacks	Jiang Y.-S;Jeng Y.-E;Yin Y.-T;Huang K.-W;Chang T.-J;Wang C.-I;Chao Y.-T;Wu C.-H;Chen M.-J.; Jiang Y.-S; Jeng Y.-E; Yin Y.-T; Huang K.-W; Chang T.-J; Wang C.-I; Chao Y.-T; Wu C.-H; Chen M.-J.; MIIN-JANG CHEN
臺大學術典藏	2021-08-05T02:41:00Z	Sub-7-nm textured ZrO2 with giant ferroelectricity	Huang K.-W;Yi S.-H;Jiang Y.-S;Kao W.-C;Yin Y.-T;Beck D;Korolkov V;Proksch R;Shieh J;Chen M.-J.; Huang K.-W; Yi S.-H; Jiang Y.-S; Kao W.-C; Yin Y.-T; Beck D; Korolkov V; Proksch R; Shieh J; Chen M.-J.; MIIN-JANG CHEN

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