| 臺大學術典藏 |
2022-09-21T23:30:31Z |
Cryogenic Si/SiGe Heterostructure Flash Memory Devices
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Hou, Wei Chih; Hsu, Nai Wen; Wang, Tz Ming; Liu, Chia You; Kao, Hsiang Shun; MIIN-JANG CHEN; JIUN-YUN LI |
| 臺大學術典藏 |
2022-09-21T23:30:31Z |
Ferroelectric ZrO2 ultrathin films on silicon for metal-ferroelectric-semiconductor capacitors and transistors
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Jiang, Yu Sen; Huang, Kuei Wen; Yi, Sheng Han; Wang, Chin I.; Chang, Teng Jan; Kao, Wei Chung; Wang, Chun Yuan; Yin, Yu Tung; TZONG-LIN JAY SHIEH; MIIN-JANG CHEN |
| 臺大學術典藏 |
2022-06-21T23:23:53Z |
Enhancement of energy storage for electrostatic supercapacitors through built-in electric field engineering
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Yi, Sheng Han; Chan, Yu Chen; Mo, Chi Lin; HSIN-CHIH LIN; MIIN-JANG CHEN |
| 臺大學術典藏 |
2022-06-21T23:23:51Z |
Large area and rapid electron beam annealing for high-quality epitaxial GaN layer
|
Lee, Wei Hao; Jhong, Fong Jyun; Yin, Yu Tung; Chou, Chun Yi; Shyue, Jing Jong; MIIN-JANG CHEN |
| 臺大學術典藏 |
2022-04-21T23:17:25Z |
Ferroelectric enhancement of Al-doped HfO2 thin films by rapid electron beam annealing in a low thermal budget
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Wang, Ting Yun; Kao, Wei Chung; Yin, Yu Tung; TZONG-LIN JAY SHIEH; MIIN-JANG CHEN |
| 臺大學術典藏 |
2022-04-21T23:17:24Z |
Atomic tailoring of low-thermal-budget and nearly wake-up-free ferroelectric Hf0.5Zr0.5O2 nanoscale thin films by atomic layer annealing
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Chang, Teng Jan; Jiang, Yu Sen; Yi, Sheng Han; Chou, Chun Yi; Wang, Chin I.; HSIN-CHIH LIN; MIIN-JANG CHEN |
| 臺大學術典藏 |
2022-04-21T23:17:24Z |
Conformal atomic layer etching for Ge based on sacrificial oxide with higher Gibbs free energy of formation
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Ling, Chen Hsiang; Chou, Chun Yi; Chung, Tsai Fu; Shyue, Jing Jong; JER-REN YANG; MIIN-JANG CHEN |
| 臺大學術典藏 |
2022-03-22T15:04:52Z |
Wake-up free Hf0.5Zr0.5O2 thin film with enhanced ferroelectricity and reliability synthesized by atomic layer crystallization induced by substrate biasing
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Chou, Chun Yi; Chen, Hsing Yang; Jiang, Yu Sen; HSIN-CHIH LIN; MIIN-JANG CHEN |
| 臺大學術典藏 |
2022-03-22T08:30:48Z |
Atomic layer deposited TiN capping layer for sub-10 nm ferroelectric Hf0.5Zr0.5O2 with large remnant polarization and low thermal budget
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Wang C.-I;Wang C.-Y;Chang T.-J;Jiang Y.-S;Shyue J.-J;Lin H.-C;Chen M.-J.; Wang C.-I; Wang C.-Y; Chang T.-J; Jiang Y.-S; Shyue J.-J; Lin H.-C; Chen M.-J.; MIIN-JANG CHEN |
| 臺大學術典藏 |
2022-03-22T08:30:48Z |
Atomic layer annealing for modulation of the work function of TiN metal gate for n-type MOS devices
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Wang C.-Y;Chou C.-Y;Shiue H.-F;Chen H.-Y;Ling C.-H;Shyue J.-J;Chen M.-J.; Wang C.-Y; Chou C.-Y; Shiue H.-F; Chen H.-Y; Ling C.-H; Shyue J.-J; Chen M.-J.; MIIN-JANG CHEN |
