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臺灣學術機構典藏系統 (Taiwan Academic Institutional Repository, TAIR)
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Showing items 21-30 of 72  (8 Page(s) Totally)
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Institution Date Title Author
臺大學術典藏 2022-03-22T08:30:45Z Atomic Layer Nucleation Engineering: Inhibitor-Free Area-Selective Atomic Layer Deposition of Oxide and Nitride Chou C.-Y;Lee W.-H;Chuu C.-P;Chen T.-A;Hou C.-H;Yin Y.-T;Wang T.-Y;Shyue J.-J;Li L.-J;Chen M.-J.; Chou C.-Y; Lee W.-H; Chuu C.-P; Chen T.-A; Hou C.-H; Yin Y.-T; Wang T.-Y; Shyue J.-J; Li L.-J; Chen M.-J.; MIIN-JANG CHEN
臺大學術典藏 2022-03-22T08:30:45Z Suppression of short channel effects in ferroelectric Si junctionless transistors with a sub-10 nm gate length defined by helium ion beam lithography Chang T.-J;Wang T.-Y;Wang C.-I;Huang Z.-D;Jiang Y.-S;Chou C.-Y;Kao W.-C;Chen M.-J.; Chang T.-J; Wang T.-Y; Wang C.-I; Huang Z.-D; Jiang Y.-S; Chou C.-Y; Kao W.-C; Chen M.-J.; MIIN-JANG CHEN
臺大學術典藏 2022-03-22T08:30:44Z Evolution of pronounced ferroelectricity in Hf0.5Zr0.5O2thin films scaled down to 3 nm Wang C.-I;Chen H.-Y;Wang C.-Y;Chang T.-J;Jiang Y.-S;Chang C.-S;Chen M.-J.; Wang C.-I; Chen H.-Y; Wang C.-Y; Chang T.-J; Jiang Y.-S; Chang C.-S; Chen M.-J.; MIIN-JANG CHEN
臺大學術典藏 2022-03-22T08:30:44Z Improvement of Corrosion Resistance and Biocompatibility of Biodegradable Mg–Ca Alloy by ALD HfZrO2 Film Lin P.-C;Lin K;Lin Y.-H;Yang K.-C;Semenov V.I;Lin H.-C;Chen M.-J.; Lin P.-C; Lin K; Lin Y.-H; Yang K.-C; Semenov V.I; Lin H.-C; Chen M.-J.; MIIN-JANG CHEN
臺大學術典藏 2022-03-22T08:30:43Z Suppression of short channel effects in ferroelectric Si junctionless transistors with a sub-10 nm gate length defined by helium ion beam lithography Chang T.-J;Wang T.-Y;Wang C.-I;Huang Z.-D;Jiang Y.-S;Chou C.-Y;Kao W.-C;Chen M.-J.; Chang T.-J; Wang T.-Y; Wang C.-I; Huang Z.-D; Jiang Y.-S; Chou C.-Y; Kao W.-C; Chen M.-J.; MIIN-JANG CHEN
臺大學術典藏 2022-03-22T08:30:43Z Modulation of zirconia ferroelectricity via crystal orientation of PT electrode Zhuang Y.-X;Shieh J;Chen M.-J;Lin H.-C.; Zhuang Y.-X; Shieh J; Chen M.-J; Lin H.-C.; MIIN-JANG CHEN
臺大學術典藏 2022-03-22T08:27:46Z Atomic Layer Nucleation Engineering: Inhibitor-Free Area-Selective Atomic Layer Deposition of Oxide and Nitride Chou C.-Y;Lee W.-H;Chuu C.-P;Chen T.-A;Hou C.-H;Yin Y.-T;Wang T.-Y;Shyue J.-J;Li L.-J;Chen M.-J.; Chou C.-Y; Lee W.-H; Chuu C.-P; Chen T.-A; Hou C.-H; Yin Y.-T; Wang T.-Y; Shyue J.-J; Li L.-J; Chen M.-J.; MIIN-JANG CHEN
臺大學術典藏 2022-03-22T08:27:46Z Atomic layer deposited TiN capping layer for sub-10 nm ferroelectric Hf0.5Zr0.5O2 with large remnant polarization and low thermal budget Wang C.-I;Wang C.-Y;Chang T.-J;Jiang Y.-S;Shyue J.-J;Lin H.-C;Chen M.-J.; Wang C.-I; Wang C.-Y; Chang T.-J; Jiang Y.-S; Shyue J.-J; Lin H.-C; Chen M.-J.; MIIN-JANG CHEN
臺大學術典藏 2022-03-22T08:27:46Z Atomic layer annealing for modulation of the work function of TiN metal gate for n-type MOS devices Wang C.-Y;Chou C.-Y;Shiue H.-F;Chen H.-Y;Ling C.-H;Shyue J.-J;Chen M.-J.; Wang C.-Y; Chou C.-Y; Shiue H.-F; Chen H.-Y; Ling C.-H; Shyue J.-J; Chen M.-J.; MIIN-JANG CHEN
臺大學術典藏 2022-03-22T08:27:45Z Enhancement of the anticoagulant capacity of polyvinyl chloride tubing for cardiopulmonary bypass circuit using aluminum oxide nanoscale coating applied through atomic layer deposition Wang C.-C;Wang L.-C;Yang K.-C;Chen M.-J;Lin H.-C;Han Y.-Y.; Wang C.-C; Wang L.-C; Yang K.-C; Chen M.-J; Lin H.-C; Han Y.-Y.; MIIN-JANG CHEN

Showing items 21-30 of 72  (8 Page(s) Totally)
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