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| 國立交通大學 |
2014-12-08T15:17:42Z |
1.3-mu m InAs-InGaAs quantum-dot vertical-cavity surface-emitting laser with fully doped DBRs grown by MBE
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Yu, HC; Wang, JS; Su, YK; Chang, SJ; Lai, FI; Chang, YH; Kuo, HC; Sung, CP; Yang, HPD; Lin, KF; Wang, JM; Chi, JY; Hsiao, RS; Mikhrin, S |
| 國立成功大學 |
2006-01 |
1.3-mu m InAs-InGaAs quantum-dot vertical-cavity surface-emitting laser with fully doped DBRs grown by MBE
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Yu, H. C.; Wang, J. S.; Su, Yan-Kuin; Chang, Shoou-Jinn; Lai, Fang-I; Chang, Ya-Hsien; Kuo, Hao-Chung; Sung, C. P.; Yang, Hung-Pin D.; Lin, K. F.; Wang, J. M.; Chi, Jim-Yong; Hsiao, R. S.; Mikhrin, S. |
| 國立東華大學 |
2006 |
1.3-um InAs-InGaAs quantum-dot vertical-cavity surface-emitting laser with fully doped DBRs grown by MBE
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祁錦雲; Jim-Yong Chi; Yu, H.C.; Wang, J.S.; Su, Y.K.; Chang, S.J.; Lai, F.I.; Chang, Y.H.; Kuo, H.C.; Sung, C.P.; Yang, H.P.D.; Lin, K.F.; Wang, J.M.; Hsiao, R.S.; Mikhrin, S. |
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