| 臺大學術典藏 |
2020-01-13T08:22:37Z |
Experimental demonstration on the ultra-low source/drain resistance by metal-insulator-semiconductor contact structure in In0.53Ga 0.47As field-effect transistors
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Liao, M.-H.; Chen, P.-K.; MING-HAN LIAO |
| 臺大學術典藏 |
2020-01-13T08:22:37Z |
Experimental demonstration for ultra-low on-resistance in raised source/drain In0.53Ga0.47As QW-MOSFETs with implant-free process
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Liao, M.-H.; Chan, P.-G.; MING-HAN LIAO |
| 臺大學術典藏 |
2020-01-13T08:22:37Z |
The demonstration of a highly efficient SiGe Type-II hetero-junction solar cell with an optimal stress design
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Liao, M.H.; MING-HAN LIAO |
| 臺大學術典藏 |
2020-01-13T08:22:37Z |
Experimental demonstration for the implant-free In0.53Ga 0.47As quantum-well metal-insulator-semiconductor field-effect transistors with ultra-low source/drain resistance
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Liao, M.-H.; Chang, L.C.; MING-HAN LIAO |
| 臺大學術典藏 |
2020-01-13T08:22:37Z |
Improved Si0.5Ge0.5/Si interface quality achieved by the process of low energy hydrogen plasma cleaning and investigation of interface quality with positron annihilation spectroscopy
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Liao, M.-H.; Chen, C.-H.; MING-HAN LIAO |
| 臺大學術典藏 |
2020-01-13T08:22:37Z |
The reduction of keep-out zone (?10×) by the optimized novel trench structures near the through silicon vias for the application in 3-dimensional integrated circuits
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Liao, M.H.; MING-HAN LIAO |
| 臺大學術典藏 |
2020-01-13T08:22:36Z |
Erratum: The novel chamber hardware design to improve the thin film deposition quality in both 12? (300 mm) and 18? (450 mm) wafers with the development of 3D full chamber modeling and experimental visual technique; (AIP Advances (2013) 3:7 (072117))
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Liao, M.-H.; Chen, C.-H.; MING-HAN LIAO |
| 臺大學術典藏 |
2020-01-13T08:22:36Z |
Erratum to "Additional Nitrogen Ion-Implantation Treatment in STI to Relax the Intrinsic Compressive Stress for n-MOSFETs"
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Liao, M.-H.; Chen, C.H.; Chang, L.C.; Yang, C.; Kao, S.C.; MING-HAN LIAO |
| 臺大學術典藏 |
2020-01-13T08:22:36Z |
A non-linear analytic stress model for the analysis on the stress interaction between TSVs
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Liao, M.-H.; Kao, S.-C.; Huang, S.-J.; MING-HAN LIAO |
| 臺大學術典藏 |
2020-01-13T08:22:36Z |
Monolithic integration of GaN-based lightemitting diodes and metal-oxide-semiconductor field-effect transistors
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Lee, Y.-J.; Yang, Z.-P.; Chen, P.-G.; Hsieh, Y.-A.; Yao, Y.-C.; Liao, M.-H.; Lee, M.-H.; Wang, M.-T.; Hwang, J.-M.; MING-HAN LIAO |
| 臺大學術典藏 |
2020-01-13T08:22:36Z |
The special trench design near the through silicon vias (TSVs) to reduce the keep-out zone for application in three-dimensional integral circuits
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Liao, M.-H.; MING-HAN LIAO |
| 臺大學術典藏 |
2020-01-13T08:22:35Z |
Performance enhancement for the triboelectric energy harvester by using interfacial micro-dome array structures
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Liao, M.-H.; Huang, H.-Y.; Chuang, C.-C.; MING-HAN LIAO |
| 臺大學術典藏 |
2020-01-13T08:22:35Z |
In 0.18 Al 0.82 N/AlN/GaN MIS-HEMT on Si with Schottky-drain contact
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Chen, P.-G.; Tang, M.; Liao, M.-H.; Lee, M.H.; MING-HAN LIAO |
| 臺大學術典藏 |
2020-01-13T08:22:35Z |
Ge1 - XSix on Ge-based n-type metal-oxide semiconductor field-effect transistors by device simulation combined with high-order stress-piezoresistive relationships
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Lee, C.-C.; Hsieh, C.-P.; Huang, P.-C.; Cheng, S.-W.; Liao, M.-H.; MING-HAN LIAO |
| 臺大學術典藏 |
2020-01-13T08:22:35Z |
The demonstration of promising Ge n-type multi-gate-field-effect transistors with the magnetic FePt metal gate scheme
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Liao, M.-H.; Huang, S.C.; MING-HAN LIAO |
| 臺大學術典藏 |
2020-01-13T08:22:35Z |
The comprehensive study and the reduction of contact resistivity on the n-InGaAs M-I-S contact system with different inserted insulators
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Liao, M.-H.; Lien, C.; MING-HAN LIAO |
| 臺大學術典藏 |
2020-01-13T08:22:35Z |
Shallow trench isolation geometric influence of a recessed surface on array-type arrangements of nano-scaled devices strained by contact etch stop liner and Ge-based stressors
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Hsieh, C.-P.; Liao, M.-H.; Lee, C.-C.; Cheng, T.-C.; Wang, C.-P.; Huang, P.-C.; Cheng, S.-W.; MING-HAN LIAO |
| 臺大學術典藏 |
2020-01-13T08:22:34Z |
Monolithic integration of GaN-based light-emitting diodes and metal-oxide-semiconductor field-effect transistors: Reply
|
Lee, Y.-J.; Yang, Z.-P.; Chen, P.-G.; Hsieh, Y.-A.; Yao, Y.-C.; Liao, M.-H.; Lee, M.-H.; Wang, M.-T.; Hwang, J.-M.; MING-HAN LIAO |
| 臺大學術典藏 |
2020-01-13T08:22:34Z |
Thickness dependence of electrical conductivity and thermo-electric power of Bi2.0Te2.7Se0.3/Bi0.4Te3.0Sb1.6 thermo-electric devices
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Liao, M.-H.; Huang, K.-C.; Tsai, F.-A.; Liu, C.-Y.; Lien, C.; Lee, M.-H.; MING-HAN LIAO |
| 臺大學術典藏 |
2020-01-13T08:22:34Z |
The effect of CESL and dummy poly gate for n-type MOSFETs with short Si0.75Ge0.25 channel
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Lee, C.-C.; Hsu, H.-W.; Liao, M.-H.; MING-HAN LIAO |
| 臺大學術典藏 |
2020-01-13T08:22:34Z |
The achievement of the super short channel control in the magnetic Ge n-FinFETs with the negative capacitance effect
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Liao, M.-H.; Huang, H.-Y.; Tsai, F.-A.; Chuang, C.-C.; Hsu, M.-H.; Lee, C.-C.; Lee, M.-H.; Lien, C.; Hsieh, C.-F.; Wu, T.-C.; Wu, H.-S.; Yao, C.-W.; MING-HAN LIAO |
| 臺大學術典藏 |
2020-01-13T08:22:34Z |
The investigation of self-heating effect on Si1-xGex FinFETs with different device structures, Ge concentration, and operated voltages
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Liao, M.-H.; Hsieh, C.-P.; Lee, C.-C.; MING-HAN LIAO |
| 臺大學術典藏 |
2020-01-13T08:22:33Z |
Optoelectronic properties of Cu3N thin films deposited by reactive magnetron sputtering and its diode rectification characteristics
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Chen, S.-C.; Huang, S.-Y.; Sakalley, S.; Paliwal, A.; Chen, Y.-H.; Liao, M.-H.; Sun, H.; Biring, S.; MING-HAN LIAO |
| 臺大學術典藏 |
2020-01-13T08:22:33Z |
Non-Volatile Ferroelectric FETs Using 5-nm Hf0.5Zr0.5O2 with High Data Retention and Read Endurance for 1T Memory Applications
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Chen, K.-T.; Chen, H.-Y.; Liao, C.-Y.; Siang, G.-Y.; Lo, C.; Liao, M.-H.; Li, K.-S.; Chang, S.T.; Lee, M.H.; MING-HAN LIAO |
| 臺大學術典藏 |
2020-01-13T08:22:33Z |
Improvement on Ferroelectricity and Endurance of Ultra-Thin HfZrO2 Capacitor with Molybdenum Capping Electrode
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Chen, K.-T.; Liao, C.-Y.; Lo, C.; Chen, H.-Y.; Siang, G.-Y.; Liu, S.; Chang, S.-C.; Liao, M.-H.; Chang, S.-T.; Lee, M.H.; MING-HAN LIAO |
