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機構 日期 題名 作者
臺大學術典藏 2022-09-21T23:30:16Z Multi-Layer Chips on Wafer Stacking Technologies with Carbon Nano-Tubes as Through-Silicon Vias and it's potential applications for Power-Via technologies Liao, Bo Zhou; Chen, Liang Hsi; Chen, Kai Cheng; Lin, Hong Yi; Tsai, Yi Ting; Chen, Ting Wei; Chan, Yi Cheng; Lee, Min Hung; MING-HAN LIAO
臺大學術典藏 2022-09-21T23:30:16Z Oxide Semiconductor Field-Effect Transistor for High-Resolution Displays Capable of Deep Black Display Okazaki, Yutaka; Sawai, Hiromi; Endo, Masami; Motoyoshi, Ryousuke; Shimada, Daigo; Kunitake, Hitoshi; Yamazaki, Shunpei; Huang, Kou Chang; Yoshida, Hiroshi; Chen, Min Cheng; MING-HAN LIAO; Chang, Shou Zen
臺大學術典藏 2022-09-21T23:30:15Z 1.5-inch, 3207-ppi Side-by-Side OLED Display Capable of 32-Division Driving with OSLSI/SiLSI Structure Fabricated by Photolithography Kozuma, Munehiro; Okamoto, Yuki; Ito, Minato; Lnoue, Hiroki; Saito, Toshihiko; Komura, Yusuke; Miyata, Shoki; Toyotaka, Kouhei; Matsuzaki, Takanori; Onuki, Tatsuya; Kobayashi, Hidetomo; Sugaya, Kentaro; Fujie, Takahiro; Okazaki, Yutaka; Hodo, Ryota; Yanagisawa, Yuichi; Wakuda, Masahiro; Murakawa, Tsutomu; Sasagawa, Shinya; Kunitake, Hitoshi; Nakamura, Daiki; Nagata, Takaaki; Fukuzaki, Shinya; Aoyama, Tomoya; Kimura, Hajime; Yen, Shih Ci; Chang, Chuan Hua; Hsieh, Wen Hsiang; Yoshida, Hiroshi; Chen, Min Cheng; MING-HAN LIAO; Chang, Shou Zen; Yamazaki, Shunpei
臺大學術典藏 2022-09-21T23:30:15Z Layout of 1.50-inch, 3207-ppi oled display with oslsi/silsi structure capable of division driving fabricated through vlsi process with side-by-side patterning by photolithography Saito, Toshihiko; Mizuguchi, Toshiki; Okamoto, Yuki; Ito, Minato; Toyotaka, Kouhei; Kozuma, Munehiro; Matsuzaki, Takanori; Kobayashi, Hidetomo; Onuki, Tatsuya; Hiura, Yoshikazu; Hodo, Ryota; Sasagawa, Shinya; Kunitake, Hitoshi; Nakamura, Daiki; Sato, Hitomi; Kimura, Hajime; Wu, Chih Chiang; Yoshida, Hiroshi; Chen, Min Cheng; MING-HAN LIAO; Chang, Shou Zen; Yamazaki, Shunpei
臺大學術典藏 2022-03-22T08:28:47Z In-Sn-Zn oxide nanocomposite films with enhanced electrical properties deposited by high-power impulse magnetron sputtering Sun H;Li Z.-Y;Chen S.-C;Liao M.-H;Gong J.-H;Bai Z;Wang W.-X.; Sun H; Li Z.-Y; Chen S.-C; Liao M.-H; Gong J.-H; Bai Z; Wang W.-X.; MING-HAN LIAO
臺大學術典藏 2022-03-22T08:28:47Z In-Sn-Zn oxide nanocomposite films with enhanced electrical properties deposited by high-power impulse magnetron sputtering Sun H;Li Z.-Y;Chen S.-C;Liao M.-H;Gong J.-H;Bai Z;Wang W.-X.; Sun H; Li Z.-Y; Chen S.-C; Liao M.-H; Gong J.-H; Bai Z; Wang W.-X.; MING-HAN LIAO
臺大學術典藏 2022-03-22T08:28:46Z The Demonstration of High-Quality Carbon Nanotubes as Through-Silicon Vias (TSVs) for Three-Dimensional Connection Stacking and Power-Via Technology Yen C;Chang S;Chen K;Feng Y;Chen L;Liao B;Lee M;Chen S;Liao M.; Yen C; Chang S; Chen K; Feng Y; Chen L; Liao B; Lee M; Chen S; Liao M.; MING-HAN LIAO
臺大學術典藏 2022-03-22T08:28:46Z The Demonstration of High-Quality Carbon Nanotubes as Through-Silicon Vias (TSVs) for Three-Dimensional Connection Stacking and Power-Via Technology Yen C;Chang S;Chen K;Feng Y;Chen L;Liao B;Lee M;Chen S;Liao M.; Yen C; Chang S; Chen K; Feng Y; Chen L; Liao B; Lee M; Chen S; Liao M.; MING-HAN LIAO
臺大學術典藏 2022-03-22T08:25:59Z The Demonstration of High-Quality Carbon Nanotubes as Through-Silicon Vias (TSVs) for Three-Dimensional Connection Stacking and Power-Via Technology Yen C;Chang S;Chen K;Feng Y;Chen L;Liao B;Lee M;Chen S;Liao M.; Yen C; Chang S; Chen K; Feng Y; Chen L; Liao B; Lee M; Chen S; Liao M.; MING-HAN LIAO
臺大學術典藏 2022-03-22T08:25:59Z In-Sn-Zn oxide nanocomposite films with enhanced electrical properties deposited by high-power impulse magnetron sputtering Sun H;Li Z.-Y;Chen S.-C;Liao M.-H;Gong J.-H;Bai Z;Wang W.-X.; Sun H; Li Z.-Y; Chen S.-C; Liao M.-H; Gong J.-H; Bai Z; Wang W.-X.; MING-HAN LIAO
臺大學術典藏 2021-12-30T03:02:05Z 2 um electroluminescence from the Si/Si0.2Ge0.8 type II heterojunction M. H. Liao; T.-H. Cheng; C. W. Liu; Lingyen Yeh; T.-L. Lee; M.-S. Liang; MING-HAN LIAO
臺大學術典藏 2021-12-30T03:02:05Z A Novel Surface Nano-Structure Design for SiGe/Si Type-II Hetero-Junction Solar Cell M.-H. Liao; C.-H. Chen; L.-C. Chang; C. Yang; S.-C. Kao; C.-F. Hsieh; MING-HAN LIAO
臺大學術典藏 2021-12-30T03:02:04Z Applications of positron annihilation, photoluminescence, and Raman spectroscopies to analyze the defect near the Si0.5Ge0.5/Si interface with super quality by diluted HF treatment C.-H. Chen; M.-H. Liao; K.-R. Lee; W.-S. Hong; K.-S. Liao; M.-C. Hung; W.-S. Wang; MING-HAN LIAO
臺大學術典藏 2021-12-30T03:02:04Z An Investigation on the Light-Emission Mechanism of Metal-Insulator-Semiconductor Light-Emitting Diodes with Different SiGe Quantum Well Structures M.-H. Liao; L. C. Chang; MING-HAN LIAO
臺大學術典藏 2021-12-30T03:02:04Z Analysis of breakdown characteristics in high-k dielectrics under electrostatic discharge impulse stress Chun-Heng Chen; Ming Han Liao; Fu-Chien Chiu; Huey-Liang Hwang; MING-HAN LIAO
臺大學術典藏 2021-12-30T03:02:04Z An Investigation on the Light-Emission Mechanism of Metal-Insulator-Semiconductor Light-Emitting Diodes with Different SiGe Quantum Well Structures M. H. Liao; MING-HAN LIAO
臺大學術典藏 2021-12-30T03:02:03Z Infrared emission from Ge metsl-isulator-semiconductor tunneling diodes M. H. Liao; T.-H. Cheng; C. W. Liu; MING-HAN LIAO
臺大學術典藏 2021-12-30T03:02:03Z Carrier backscattering characteristics of nanoscale strained complementary metal-oxide-semiconductor devices featuring the optimal stress engineering Shu-Tong Chang; Ming-Han Liao; Chang-Chun Lee; Jacky Huang; Bing-Fong Hsieh; MING-HAN LIAO
臺大學術典藏 2021-12-30T03:02:02Z Non-Volatile Ferroelectric FETs Using 5-nm HfZrO with High Data Retention and Read Endurance for 1T Memory Applications K.-T. Chen; H.-Y. Chen; C.-Y. Liao; G.-Y. Siang; C. Lo; M.-H. Liao; K.-S. Li; S. T. Chang; M.-H. Lee; MING-HAN LIAO
臺大學術典藏 2021-12-30T03:02:02Z Nano-textured photonic crystal light-emitting diodes and solar cells M.-H. Liao; C.-H. Chen; L.-C. Chang; C. Yang; S.-C. Kao; C.-F. Hsieh; MING-HAN LIAO
臺大學術典藏 2021-12-30T03:02:02Z Optoelectronic properties of Cu3N thin films deposited by reactive magnetron sputtering and its diode rectification characteristics S.-C. Chen; S.-Y. Huang; S. Sakalley; A. Paliwal; Y.-H. Chen; M.-H. Liao; H. Sun; S. Biring; MING-HAN LIAO
臺大學術典藏 2021-12-30T03:02:01Z SiGe Quantum Well Metal-Insulator-Semiconductor Light-Emitting Diodes M.-H. Liao; C.-H. Chen; L.-C. Chang; C. Yang; S.-C. Kao; C.-F. Hsieh; MING-HAN LIAO
臺大學術典藏 2021-12-30T03:02:01Z Strain Engineering of Nanoscale Strained Si MOS Devices B.-F. Hsieh; S. T. Chang; W.-C.Wang; M.-H. Liao; C.-C. Lee; J. Huang; MING-HAN LIAO
臺大學術典藏 2021-12-30T03:02:00Z The Demonstration of High-Performance Multilayer BaTiO3/BiFeO3 Stack MIM Capacitors C. Lien; C.-F. Hsieh; H.-S. Wu; T.-C. Wu; S.-J. Wei; Y.-H. Chu; M.-H. Liao; M.-H. Lee; MING-HAN LIAO
臺大學術典藏 2021-12-30T03:02:00Z Studies of boron diffusivities on (001) and (110) substrate orientation in Si and Ge along vertical/out-of plane and lateral/in-plane directions by SIMS and C-V measurement on the designed test pattern M.-H. Liao; MING-HAN LIAO

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